公开(公告)号：US20120132368A1

公开(公告)日：2012-05-31

申请号：US13292137

申请日：2011-11-09

申请人： Hiroyuki KOBAYASHI ,  Takumi TANDOU ,  Shoichi NAKASHIMA ,  Naoshi ITABASHI

发明人： Hiroyuki KOBAYASHI ,  Takumi TANDOU ,  Shoichi NAKASHIMA ,  Naoshi ITABASHI

IPC分类号： H01L21/3065 ,  B01J19/08 ,  C23C16/50

CPC分类号： C23C16/517 ,  H01J37/32073 ,  H01J37/32082

摘要： To improve durability of an electric discharge part of a dielectric barrier discharge system, a plasma treatment apparatus is configured so that a plasma source of a corona discharge system is installed in the vicinity of a plasma source of the dielectric barrier discharge system, a plasma generated by corona discharge is used as an auxiliary plasma, and a discharge sustaining voltage of a main plasma generated by the dielectric barrier discharge is reduced.

摘要翻译： 为了提高电介质阻挡放电系统的放电部分的耐久性，等离子体处理装置被配置为使电晕放电系统的等离子体源安装在电介质阻挡放电系统的等离子体源附近，产生等离子体 通过电晕放电用作辅助等离子体，并且通过电介质阻挡放电产生的主等离子体的放电维持电压降低。

公开(公告)号：US20110297533A1

公开(公告)日：2011-12-08

申请号：US13212909

申请日：2011-08-18

申请人： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

发明人： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC分类号： H01L21/3065

CPC分类号： H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

摘要： The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

摘要翻译： 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US20100282414A1

公开(公告)日：2010-11-11

申请号：US12842368

申请日：2010-07-23

申请人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： H01L21/306

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。

公开(公告)号：US20090152241A1

公开(公告)日：2009-06-18

申请号：US12390231

申请日：2009-02-20

申请人： Go MIYA ,  Junichi TANAKA ,  Seiichiro KANNO ,  Naoshi ITABASHI ,  Hiroshi AKIYAMA ,  Kouhei SATOU

发明人： Go MIYA ,  Junichi TANAKA ,  Seiichiro KANNO ,  Naoshi ITABASHI ,  Hiroshi AKIYAMA ,  Kouhei SATOU

IPC分类号： H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32935 ,  H01J37/32972

摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.

摘要翻译： 本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。 本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布 衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

公开(公告)号：US20110139370A1

公开(公告)日：2011-06-16

申请号：US13031839

申请日：2011-02-22

申请人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

发明人： Naoshi ITABASHI ,  Tsutomu Tetsuka ,  Seiichiro Kanno ,  Motohiko Yoshigai

IPC分类号： C23F1/08 ,  C23C16/52 ,  C23C16/50 ,  B08B13/00

CPC分类号： H01J37/32706 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32935 ,  H01L21/6831

摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

摘要翻译： 一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理 使用等离子体。 该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率 源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化， 并在气体注射板中异常注入。