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1.发明授权Acoustic resonator device, filter device, manufacturing method for acoustic resonator device, and communication apparatus 失效声谐振器装置，滤波装置，声谐振器装置的制造方法以及通信装置公开(公告)号：US07235915B2
公开(公告)日：2007-06-26
申请号：US10991772
申请日：2004-11-18
摘要： An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.
摘要翻译： 声谐振器装置包括基板，第一声谐振器和第二声谐振器。 第一声谐振器形成在基板上，并且具有第一上电极，第一压电层和第一下电极层，并以λ/ 4模式以第一谐振频率谐振。 第二声谐振器形成在基板上，并且具有第二上电极层，第二压电层和第二下电极层，并且以不同于第一频率的第二谐振频率以λ/ 2模式谐振。 在声谐振器装置中，第一下电极层和第二下电极层的材料和厚度是共同的并且基本上相等，并且第一压电层和第二压电层的材料和厚度是共同的并且基本相等。
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2.发明申请Acoustic mirror type thin film bulk acoustic resonator, and filter, duplexer and communication apparatus comprising the same 审中-公开声镜式薄膜体声波谐振器，以及包括其的滤波器，双工器和通信装置公开(公告)号：US20060220763A1
公开(公告)日：2006-10-05
申请号：US10552582
申请日：2005-03-31
IPC分类号： H03H9/00
CPC分类号： H03H9/175 , H03H9/02157
摘要： A thin film bulk acoustic resonator (507b) comprises a substrate (101b), an acoustic mirror layer (508b) provided on the substrate (101b), including a plurality of impedance layers (502b, 503b) alternatively having a high acoustic impedance and a low acoustic impedance, and a piezoelectric thin film vibrator (509b) provided on the acoustic mirror layer (508b), including a lower electrode (504b), a piezoelectric thin film (105b) and an upper electrode (506b). The sum of a thickness of the lower electrode (504b) and a thickness of the upper electrode (506b) is 5% or more and 60% or less of a whole thickness of the piezoelectric thin film vibrator (509b), and the thickness of the lower electrode (504b) is larger than the thickness of the upper electrode (506b).
摘要翻译： 薄膜体声波谐振器（507b）包括衬底（101b），设置在衬底（101b）上的声镜层（508b）），包括多个阻抗层（502b，503b），交替地具有 高声阻抗和低声阻抗，以及设置在声镜层（508b）上的压电薄膜振子（509b），包括下电极（504b），压电薄膜（105b）和 上电极（506b）。 下部电极（504b）的厚度与上部电极（506b）的厚度之和为压电薄膜振子（509b）的整体厚度的5％以上且60％以下， 下电极（504b）的厚度大于上电极（506b）的厚度。
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3.发明授权公开(公告)号：US07701311B2
公开(公告)日：2010-04-20
申请号：US12185342
申请日：2008-08-04
CPC分类号： H03H9/706 , H03H9/0038 , H03H9/0042 , H03H9/0576 , H03H9/14588 , H03H9/72 , H03H9/725
摘要： One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.
摘要翻译： 连接到发送滤波器的多个发送终端中的一个和连接到接收滤波器的接收终端是平衡型终端，另一个是不平衡型终端。 传输滤波器和接收滤波器包括表面声波谐振器或薄膜体声共振器。 平衡型端子连接到纵模耦合表面声波滤波器。
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4.发明授权公开(公告)号：US07446629B2
公开(公告)日：2008-11-04
申请号：US11195820
申请日：2005-08-03
CPC分类号： H03H9/706 , H03H9/0038 , H03H9/0042 , H03H9/0576 , H03H9/14588 , H03H9/72 , H03H9/725
摘要： One of plurality of transmission terminals connected to a transmission filter and a receiving terminal connected to a receiving filter is a balanced type terminal, and another is an unbalanced type terminal. The transmission filter and the receiving filter includes surface acoustic wave resonators or film bulk acoustic resonators. The balanced type terminal is connected to a longitudinal mode coupled surface acoustic wave filter.
摘要翻译： 连接到发送滤波器的多个发送终端中的一个和连接到接收滤波器的接收终端是平衡型终端，另一个是不平衡型终端。 传输滤波器和接收滤波器包括表面声波谐振器或薄膜体声共振器。 平衡型端子连接到纵模耦合表面声波滤波器。
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公开(公告)号：US20060284703A1
公开(公告)日：2006-12-21
申请号：US11453070
申请日：2006-06-15
CPC分类号： H03H9/0095 , H03H9/0004 , H03H9/0207 , H03H9/02157 , H03H9/564
摘要： In a balanced/unbalanced type coupled FBAR filter 100, an area size of a first lower electrode 102 is generally equal to a total area size of second and third lower electrodes 104 and 106 and an area for isolating the second and third lower electrodes 104 and 106. An area size of a first upper electrode 103 is generally equal to a total area size of second and third upper electrodes 105 and 107 and an area for isolating the second and third upper electrodes 105 and 107. The third lower electrode 106 and the second upper electrode 105 are located to face each other, and the third upper electrode 107 and the second lower electrode 104 are located to face each other. Apart of the second lower electrode 104 and a part of the second upper electrode 105 are located to face each other.
摘要翻译： 在平衡/不平衡型耦合FBAR滤波器100中，第一下电极102的面积大小通常等于第二和第三下电极104和106的总面积尺寸，以及用于隔离第二和第三下电极104和 106。 第一上部电极103的面积尺寸大体上等于第二和第三上部电极105和107的总面积尺寸以及用于隔离第二和第三上部电极105和107的区域。 第三下部电极106和第二上部电极105相对配置，第三上部电极107和第二下部电极104相对配置。 第二下电极104和第二上电极105的一部分位于彼此面对。
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公开(公告)号：US07701117B2
公开(公告)日：2010-04-20
申请号：US11916623
申请日：2006-06-22
IPC分类号： H01L41/09
CPC分类号： H03H9/0211 , H03H3/02 , H03H9/173 , H03H9/175 , H03H2003/021 , H03H2003/025
摘要： A first supporting section provided between a substrate section and a second supporting section. The first supporting section is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body and the substrate section, or a film formed from a material having a smaller Q value than the piezoelectric body and substrate section. By inserting the first supporting section, most vibration from the second supporting section toward the substrate section is reflected, and also a vibration having been transmitted to the substrate section from the second supporting section is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section.
摘要翻译： 设置在基板部分和第二支撑部分之间的第一支撑部分。 第一支撑部由例如由具有比压电体高的声阻抗的材料形成的膜和基板部分构成，或者由具有比压电体和基板部分的Q值小的材料形成的膜。 通过插入第一支撑部分，反射从第二支撑部分到基板部分的大部分振动，并且也防止了从第二支撑部分向基板部分传递的振动在基板部分40的底部反射，并且 然后沿振动部的方向返回。
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公开(公告)号：US07414495B2
公开(公告)日：2008-08-19
申请号：US11453070
申请日：2006-06-15
IPC分类号： H03H9/00
CPC分类号： H03H9/0095 , H03H9/0004 , H03H9/0207 , H03H9/02157 , H03H9/564
摘要： In a balanced/unbalanced type coupled FBAR filter 100, an area size of a first lower electrode 102 is generally equal to a total area size of second and third lower electrodes 104 and 106 and an area for isolating the second and third lower electrodes 104 and 106. An area size of a first upper electrode 103 is generally equal to a total area size of second and third upper electrodes 105 and 107 and an area for isolating the second and third upper electrodes 105 and 107. The third lower electrode 106 and the second upper electrode 105 are located to face each other, and the third upper electrode 107 and the second lower electrode 104 are located to face each other. Apart of the second lower electrode 104 and a part of the second upper electrode 105 are located to face each other.
摘要翻译： 在平衡/不平衡型耦合FBAR滤波器100中，第一下电极102的面积大小通常等于第二和第三下电极104和106的总面积尺寸，以及用于隔离第二和第三下电极104和 106。 第一上部电极103的面积尺寸大体上等于第二和第三上部电极105和107的总面积尺寸以及用于隔离第二和第三上部电极105和107的区域。 第三下部电极106和第二上部电极105相对配置，第三上部电极107和第二下部电极104相对配置。 第二下电极104和第二上电极105的一部分位于彼此面对。
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8.发明申请Acoustic resonator device, filter device, manufacturing method for acoustic resonator device, and communication apparatus 失效声谐振器装置，滤波装置，声谐振器装置的制造方法以及通信装置公开(公告)号：US20050134147A1
公开(公告)日：2005-06-23
申请号：US10991772
申请日：2004-11-18
摘要： An acoustic resonator device includes a substrate, a first acoustic resonator and a second acoustic resonator. The first acoustic resonator is formed on the substrate, and has a first upper electrode, a first piezoelectric layer, and a first lower electrode layer, and resonates in a λ/4 mode at a first resonant frequency. The second acoustic resonator is formed on the substrate, and has a second upper electrode layer, a second piezoelectric layer, and a second lower electrode layer, and resonates in a λ/2 mode at a second resonant frequency different from the first frequency. In the acoustic resonator device, materials and thicknesses of the first lower electrode layer and the second lower electrode layer are common and substantially equal, and materials and thicknesses of the first piezoelectric layer and the second piezoelectric layer are common and substantially equal.
摘要翻译： 声谐振器装置包括基板，第一声谐振器和第二声谐振器。 第一声谐振器形成在基板上，并且具有第一上电极，第一压电层和第一下电极层，并以λ/ 4模式以第一谐振频率谐振。 第二声谐振器形成在基板上，并且具有第二上电极层，第二压电层和第二下电极层，并且以不同于第一频率的第二谐振频率以λ/ 2模式谐振。 在声谐振器装置中，第一下电极层和第二下电极层的材料和厚度是共同的并且基本上相等，并且第一压电层和第二压电层的材料和厚度是共同的并且基本相等。
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公开(公告)号：US20090102319A1
公开(公告)日：2009-04-23
申请号：US11916623
申请日：2006-06-22
CPC分类号： H03H9/0211 , H03H3/02 , H03H9/173 , H03H9/175 , H03H2003/021 , H03H2003/025
摘要： A first supporting section 30 is provided between a substrate section 40 and a second supporting section 20. The first supporting section 30 is structured by, e.g., a film formed from a material having a higher acoustic impedance than a piezoelectric body 11 and the substrate section 40, or a film formed from a material having a smaller Q value than the piezoelectric body 11 and substrate section 40. By inserting the first supporting section 30, most vibration from the second supporting section 20 toward the substrate section 40 is reflected (arrow a), and also a vibration having been transmitted to the substrate section 40 from the second supporting section 20 is prevented from reflecting at the bottom of the substrate section 40 and then returning in a direction of the vibration section 10 (arrow b).
摘要翻译： 第一支撑部分30设置在基板部分40和第二支撑部分20之间。第一支撑部分30由例如由具有比压电体11更高的声阻抗的材料形成的膜和基板部分 或者由具有比压电体11和基板部40的Q值小的材料形成的膜。通过插入第一支撑部30，从第二支撑部20向基板部40的大部分振动被反射（箭头a ），并且从第二支撑部20传递到基板部40的振动也被防止在基板部40的底部反射，然后在振动部10的方向上返回（箭头b）。
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公开(公告)号：US20050218753A1
公开(公告)日：2005-10-06
申请号：US11092722
申请日：2005-03-30
IPC分类号： H01L41/053 , H03B5/30 , H03H9/02 , H03H9/17 , H03H9/58
CPC分类号： H03H9/02157 , H03H9/02149 , H03H9/174 , H03H9/585 , H03H9/588
摘要： The area of an opening C of a cavity 31 is equal to or greater than the area of a horizontal cross section D of a vibrating section 10. The vibrating section 10 is placed on a support section 20 at a position such that a vertical projection of the vibrating section 10 onto a substrate 30 is accommodated within the opening C of the cavity 31. Moreover, the sum of a vertical thickness t1 of the vibrating section 10 and a vertical thickness t2 of the support section 20 is equal to one wavelength of a resonance frequency fr of an acoustic resonator 1 (one wavelength=t1+t2), while the thickness t1 of the vibrating section 10 and the thickness t2 of the support section 20 are different from each other (t1≠t2). Thus, neither the thickness t1 of the vibrating section 10 nor the thickness t2 of the support section 20 is equal to the half wavelength of the resonance frequency fr.
摘要翻译： 空腔31的开口C的面积等于或大于振动部分10的水平横截面D的面积。 振动部分10被放置在支撑部分20上，使得振动部分10在基片30上的垂直突起容纳在空腔31的开口C内。 此外，振动部10的垂直厚度t 1和支撑部20的垂直厚度t 2之和等于声谐振器1的共振频率fr的一个波长（一个波长= t 1 + t 2 ），而振动部10的厚度t 1和支撑部20的厚度t 2彼此不同（t 1> t 2）。 因此，振动部10的厚度t 1和支撑部20的厚度t 2都不等于共振频率fr的半波长。
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