THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER
    1.
    发明申请
    THERMAL OXIDE FILM FORMATION METHOD FOR SILICON SINGLE CRYSTAL WAFER 有权
    硅单晶水热氧化膜成型方法

    公开(公告)号:US20130178071A1

    公开(公告)日:2013-07-11

    申请号:US13824028

    申请日:2011-10-06

    IPC分类号: H01L21/316

    摘要: Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

    摘要翻译: 公开了在硅单晶晶片上形成热氧化膜的方法,其包括将硅单晶片投掷到热处理炉中; 将热处理炉的升温至达到形成热氧化膜的温度T1,形成厚度为d1的热氧化膜; 随后将热处理炉的温度降低到低于温度T1的温度; 然后将热处理炉的温度升高到高于温度T1的温度T2,以另外形成厚度d2厚于厚度d1的热氧化膜。 因此,提供了一种热氧化膜形成方法,以在形成热氧化膜期间抑制硅单晶片的滑移位错和/或裂纹的发生。

    Thermal oxide film formation method for silicon single crystal wafer
    2.
    发明授权
    Thermal oxide film formation method for silicon single crystal wafer 有权
    硅单晶晶片的热氧化膜形成方法

    公开(公告)号:US09171737B2

    公开(公告)日:2015-10-27

    申请号:US13824028

    申请日:2011-10-06

    IPC分类号: H01L21/316 H01L21/02

    摘要: Disclosed is a method of forming a thermal oxide film on a silicon single crystal wafer, which includes throwing the silicon single wafer into a heat treatment furnace; elevating temperature of the heat treatment furnace up to a temperature T1 where a thermal oxide film is formed to form a thermal oxide film having a thickness d1; subsequently lowering the temperature of the heat treatment furnace down to a temperature lower than the temperature T1; and thereafter elevating the temperature of the heat treatment furnace up to a temperature T2 higher than the temperature T1 to additionally form a thermal oxide film having a thickness d2 thicker than the thickness d1. Thus, there is provided a thermal oxide film formation method to suppress occurrence of slip dislocation and/or crack of the silicon single wafer during formation of the thermal oxide film.

    摘要翻译: 公开了在硅单晶晶片上形成热氧化膜的方法,其包括将硅单晶片投掷到热处理炉中; 将热处理炉的升温至达到形成热氧化膜的温度T1,形成厚度为d1的热氧化膜; 随后将热处理炉的温度降低到低于温度T1的温度; 然后将热处理炉的温度升高到高于温度T1的温度T2,以另外形成厚度d2厚于厚度d1的热氧化膜。 因此,提供了一种热氧化膜形成方法,以在形成热氧化膜期间抑制硅单晶片的滑移位错和/或裂纹的发生。

    ELECTROCHROMIC DISPLAY ELEMENT AND METHOD FOR PRODUCING ELECTROCHROMIC DISPLAY ELEMENT

    公开(公告)号:US20220315830A1

    公开(公告)日:2022-10-06

    申请号:US17693781

    申请日:2022-03-14

    摘要: Provided is an electrochromic display element including a first substrate, a first electrode over the first substrate, a first electrochromic layer over the first electrode, an electrolyte layer over the first electrochromic layer, a second electrode over the electrolyte layer, and a second substrate over the second electrode. The first electrochromic layer contains tin oxide having an average primary particle diameter of less than 30 nm and an electrochromic compound containing a functional group bindable to the tin oxide. The amount by mole of the electrochromic compound per area of the first electrochromic layer is from 2.0×10−8 mol/cm2 through 2.0×10−7 mol/cm2.

    Drive system, video device, image projection device, and drive control method

    公开(公告)号:US10048490B2

    公开(公告)日:2018-08-14

    申请号:US15234626

    申请日:2016-08-11

    摘要: A drive system includes an actuator, a waveform generating unit, a driving amplifier, and a bias amplifier. The actuator includes a drive unit. The waveform generating unit generates a voltage waveform for driving the drive unit. The driving amplifier amplifies the voltage waveform so as to apply a voltage to the drive unit. The bias amplifier applies a bias voltage to the drive unit. The driving amplifier and the bias amplifier are coupled to a shared power supply and the ground. The output voltage of the bias amplifier is higher than the minimum output voltage of the driving amplifier.

    Centrifuge and centrifuge operation information collecting system
    7.
    发明授权
    Centrifuge and centrifuge operation information collecting system 有权
    离心机和离心机操作信息采集系统

    公开(公告)号:US09517477B2

    公开(公告)日:2016-12-13

    申请号:US13038410

    申请日:2011-03-02

    IPC分类号: B04B13/00 B04B5/10 B04B9/10

    CPC分类号: B04B13/00 B04B5/10 B04B9/10

    摘要: A centrifuge includes: a driving unit; a rotor configured to be rotated by the driving unit and hold a sample; a control unit configured to control rotation of the driving unit; and a communication controller configured to communicate with an external network. The control unit has an automatic transmission mode in which operation data is collected at predetermined intervals while the centrifuge is operating and the operation data is periodically transmitted to a data managing apparatus through the network.

    摘要翻译: 离心机包括:驱动单元; 构造成由所述驱动单元旋转并保持样本的转子; 控制单元,被配置为控制所述驱动单元的旋转; 以及通信控制器,被配置为与外部网络进行通信。 控制单元具有自动传送模式,其中在离心机运行时以预定间隔收集操作数据,并且通过网络将操作数据周期性地发送到数据管理装置。

    Memory control apparatus, information processing apparatus, and memory control method
    10.
    发明授权
    Memory control apparatus, information processing apparatus, and memory control method 有权
    存储器控制装置,信息处理装置和存储器控制方法

    公开(公告)号:US09166933B2

    公开(公告)日:2015-10-20

    申请号:US13542139

    申请日:2012-07-05

    摘要: A memory control apparatus that controls writing and reading of data to/from a memory. The memory control apparatus includes: a sequence control unit that receives a packet sequence including a write packet including a write request of data and a read packet including a read request of the data, and changes an arrangement of the write packet and the read packet included in the packet sequence so that a first predetermined number of write packets are arranged successively and a second predetermined number of read packets are arranged successively; and a command output unit that receives the packet sequence from the sequence control unit, and outputs a write command according to the write packet and an a read command according to the read packet to the memory, in accordance with an order of arrangement of the write packet and the read packet.

    摘要翻译: 一种用于控制向/从存储器写入和读取数据的存储器控​​制装置。 存储器控制装置包括:序列控制单元,其接收包括包括数据的写入请求的写入包和包含数据的读取请求的读取包的数据包序列,并且改变写入数据包和包含的读取数据包的配置 在分组序列中,使得第一预定数量的写分组被连续地排列,并且第二预定数量的读分组被依次布置; 以及命令输出单元,其从顺序控制单元接收分组序列,并且根据写入分组和根据读取的分组的读取命令,根据写入的顺序将顺序输出到存储器 包和读包。