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    Method of inspecting circuit pattern and inspecting instrument
    1.
    发明申请
    Method of inspecting circuit pattern and inspecting instrument 失效

    公开(公告)号：US20030206027A1

    公开(公告)日：2003-11-06

    申请号：US10430188

    申请日：2003-05-07

    Applicant: Hitachi, Ltd.

    Inventor： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

    IPC: G01R031/305

    CPC classification number: H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

    Inspection method and inspection system using charged particle beam
    2.
    发明申请
    Inspection method and inspection system using charged particle beam 失效
    使用带电粒子束的检查方法和检查系统

    公开(公告)号：US20030204826A1

    公开(公告)日：2003-10-30

    申请号：US10419141

    申请日：2003-04-21

    Applicant: Hitachi, Ltd.

    Inventor： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

    IPC: G06F017/50

    CPC classification number: G01N23/203 ,  G01N21/9501 ,  G01N23/225 ,  G01N2021/95615 ,  G01R31/307 ,  G01R31/311 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/2817

    Abstract: Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.

    Abstract translation: 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 确定电容量与检查图像中的电容量一致。 通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

    Method and apparatus for inspecting patterns of a semiconductor device with an electron beam
    5.
    发明申请
    Method and apparatus for inspecting patterns of a semiconductor device with an electron beam 有权
    用电子束检查半导体器件的图案的方法和装置

    公开(公告)号：US20020024021A1

    公开(公告)日：2002-02-28

    申请号：US09982965

    申请日：2001-10-22

    Applicant: Hitachi, Ltd.

    Inventor： Yuko Iwabuchi ,  Hideo Todokoro ,  Hiroyoshi Mori ,  Mitsugu Sato ,  Yasutsugu Usami ,  Mikio Ichihashi ,  Satoru Fukuhara ,  Hiroyuki Shinada ,  Yutaka Kaneko ,  Atsuko Takafuji ,  Hiroshi Toyama ,  Katsuya Sugiyama

    IPC: G21G005/00 ,  A61N005/00

    CPC classification number: H01J37/28 ,  G01N23/04 ,  H01J2237/2817

    Abstract: An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.

    Abstract translation: 本发明的目的是提供一种使用电子束的检查方法及其检查装置，其能够提高分辨率，提高检查速度和可靠性，并实现设备的小型化。 为了实现上述目的，根据本发明，提供一种使用电子束的检查方法，包括以下步骤： 通过样品台对样品施加电压; 将电子束会聚在样品上; 用聚光电子束扫描样品，同时连续移动样品台; 检测从样品产生的带电粒子; 并且基于检测到的带电粒子检测样品上的缺陷; 其中基于所述样品台和所述屏蔽框架之间的临界放电来确定所述样品和所述屏蔽框架之间的距离; 提供了用于校正电子束形状的至少六极的线圈; 电子束在作为消隐支点的电子束交叉的样品移动过程中偏转为消隐; 或者施加到样品的电压的大小可以根据样品的种类来确定。

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