Abstract:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer. The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.
Abstract:
A scanning transmission electron microscope (STEM) offering substantially the same ease of operation as that of a scanning electron microscope (SEM) and providing substantially the same degree of resolution as that of a transmission electron microscope (TEM). The STEM of the invention is constituted based on the constitution of the SEM. The STEM comprises: an electron source for generating a primary electron beam; an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination; an electron deflecting system for scanning the specimen with the primary electron beam emitted thereto; a scattered electron detector for detecting scattered electrons transmitted through the specimen; a projection lens system for projecting the scattered electrons onto a detection surface of the scattered electron detector; an image displaying device for displaying a scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector; and a detection angle changing device for variably establishing a range of scattering angle of the scattered electrons detected by the scattered electron detector. This structure enhances a contrast of a desired portion of the specimen under observation for a scanning transmitted image by selective establishment of detection angle ranges for the scattered electron detector.
Abstract:
An object of the present invention is to provide an inspection method using an electron beam and an inspection apparatus therefor, which are capable of enhancing the resolution, improving the inspection speed and reliability, and realizing miniaturization the apparatus. To achieve the above object, according to the present invention, there is provided an inspection method using an electron beam, including the steps of; applying a voltage on a sample via a sample stage; converging an electron beam on the sample; scanning the sample with the converged electron beam and simultaneously, continuously moving the sample stage; detecting charged particles generated from the sample; and detecting a defect on the sample on the basis of the detected charged particles; wherein a distance between the sample and the shield frame is determined on the basis of a critical discharge between the sample stage and the shield frame; coils of at least hexapoles for correcting the shape of an electron beam are provided; the electron beam is deflected for blanking during movement of the sample with the crossover of the electron beam taken as a fulcrum of blanking; or the magnitude of the voltage applied to the sample may be determined depending on the kind of sample.
Abstract:
Disclosed is an observation apparatus and method using an electron beam, capable of measuring information regarding a crystal structure in a specimen (such as information regarding stress and strain in the specimen) with high sensitivity and high resolution from an electron beam diffraction image obtained by irradiating the specimen with an electron beam. An observation method according to the invention includes: a step of mounting a specimen on a specimen stage; an enlarged image acquiring step of irradiating a predetermined area in the specimen with an electron beam while scanning the electron beam, and acquiring an enlarged image of a specimen internal structure in the predetermined area in the specimen by using the electron beam passed through the specimen; a diffraction image acquiring step of irradiating a specific portion included in the predetermined area in the specimen with the electron beam and acquiring a diffraction image including information of a crystal structure in the specimen in the specific portion in the specimen, formed by the electron beam diffracted in the specimen; a crystal structure information extracting step of extracting information of the crystal structure in the specimen from the diffracted image acquired in the diffraction image acquiring step; and a superimposing and displaying step of displaying the information of the crystal structure in the specimen extracted in the crystal structure information extracting step so as to be superimposed on the enlarged image acquired in the enlarged image acquiring step. The observation method according to the invention can obtain information of the crystal structure in a specimen with high sensitivity and high resolution.