公开(公告)号：US20030204826A1

公开(公告)日：2003-10-30

申请号：US10419141

申请日：2003-04-21

申请人： Hitachi, Ltd.

发明人： Hidetoshi Nishiyama ,  Mari Nozoe ,  Hiroyuki Shinada

IPC分类号： G06F017/50

CPC分类号： G01N23/203 ,  G01N21/9501 ,  G01N23/225 ,  G01N2021/95615 ,  G01R31/307 ,  G01R31/311 ,  G06T7/001 ,  G06T2207/30148 ,  H01J37/268 ,  H01J37/28 ,  H01J2237/2817

摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacity are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.

摘要翻译： 通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。 产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。 另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和 确定电容量与检查图像中的电容量一致。 通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

公开(公告)号：US20020105648A1

公开(公告)日：2002-08-08

申请号：US10115079

申请日：2002-04-04

申请人： Hitachi, Ltd.

发明人： Yasuhiko Nara ,  Kazuhisa Machida ,  Mari Nozoe ,  Hiroshi Morioka ,  Yasutsugu Usami ,  Takashi Hiroi ,  Kohichi Hayakawa ,  Maki Ito

IPC分类号： G01N021/88

CPC分类号： G03F7/70616 ,  G03F1/84 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/30141 ,  H01J37/226 ,  H01J2237/082 ,  H01J2237/2817 ,  H01L22/12

摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

公开(公告)号：US20020027440A1

公开(公告)日：2002-03-07

申请号：US09983703

申请日：2001-10-25

申请人： Hitachi, Ltd.

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R031/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

摘要翻译： 一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射， 在扫描电子束的同时，在从电子束照射的时刻起经过规定的时间后，在用电子束照射的部分检测到二次带电粒子，根据这样检测出的次级 通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

公开(公告)号：US20030130806A1

公开(公告)日：2003-07-10

申请号：US10342871

申请日：2003-01-16

申请人： Hitachi, Ltd.

发明人： Fumio Mizuno ,  Seiji Isogai ,  Kenji Watanabe ,  Yasuhiro Yoshitake ,  Terushige Asakawa ,  Yuichi Ohyama ,  Hidekuni Sugimoto ,  Seiji Ishikawa ,  Masataka Shiba ,  Jun Nakazato ,  Makoto Ariga ,  Tetsuji Yokouchi ,  Toshimitsu Hamada ,  Ikuo Suzuki ,  Masami Ikota ,  Mari Nozoe ,  Isao Miyazaki ,  Yoshiharu Shigyo

IPC分类号： G01B005/28 ,  G01B005/30 ,  G06F019/00

CPC分类号： H01L22/20 ,  G01N21/9501 ,  G01R31/2894 ,  G01R33/06 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.

摘要翻译： 根据本发明的处理管理系统包括用于检查晶片上的缺陷的检查装置，通过通信网络连接的检查装置，从这些检查装置获得的检查信息和图像信息被收集以构建数据库和图像 文件，其中缺陷的定义通过基于检查信息和从检查装置获得的图像信息来表征缺陷的元件的组合来给出。 通过给出缺陷的定义，可以细分和知道缺陷的特征。 因此，可以研究缺陷的原因。

公开(公告)号：US20030058444A1

公开(公告)日：2003-03-27

申请号：US10287706

申请日：2002-11-05

申请人： HITACHI, LTD.

发明人： Yasuhiko Nara ,  Kazuhisa Machida ,  Mari Nozoe ,  Hiroshi Morioka ,  Yasutsugu Usami ,  Kohichi Hayakawa ,  Maki Ito

IPC分类号： G01B011/00

CPC分类号： G03F7/70616 ,  G03F1/84 ,  G03F7/7065 ,  G06T7/001 ,  G06T2207/30141 ,  H01J37/226 ,  H01J2237/082 ,  H01J2237/2817 ,  H01L22/12

摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

公开(公告)号：US20040222377A1

公开(公告)日：2004-11-11

申请号：US10865850

申请日：2004-06-14

申请人： Hitachi, Ltd.

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： H01J037/29

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

公开(公告)号：US20030164460A1

公开(公告)日：2003-09-04

申请号：US10400588

申请日：2003-03-28

申请人： Hitachi, Ltd.

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： G21G005/00 ,  A61N005/00

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US20030169060A1

公开(公告)日：2003-09-11

申请号：US10379555

申请日：2003-03-06

申请人： Hitachi, Ltd.

发明人： Hiroyuki Shinada ,  Mari Nozoe ,  Haruo Yoda ,  Kimiaki Ando ,  Katsuhiro Kuroda ,  Yutaka Kaneko ,  Maki Tanaka ,  Shunji Maeda ,  Hitoshi Kubota ,  Aritoshi Sugimoto ,  Katsuya Sugiyama ,  Atsuko Takafuji ,  Yusuke Yajima ,  Hiroshi Tooyama ,  Tadao Ino ,  Takashi Hiroi ,  Kazushi Yoshimura ,  Yasutsugu Usami

IPC分类号： G01R031/305

CPC分类号： G01R31/305 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is radiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.

公开(公告)号：US20030206027A1

公开(公告)日：2003-11-06

申请号：US10430188

申请日：2003-05-07

申请人： Hitachi, Ltd.

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R031/305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

公开(公告)号：US20030179007A1

公开(公告)日：2003-09-25

申请号：US10395197

申请日：2003-03-25

申请人： Hitachi, Ltd

发明人： Mari Nozoe ,  Mitsuo Suga ,  Yoichiro Neo ,  Hidetoshi Nishiyama

IPC分类号： G01R031/02

CPC分类号： H01J37/222 ,  G01R31/307 ,  H01J37/256 ,  H01J37/263 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/043 ,  H01J2237/24564 ,  H01J2237/2594 ,  H01J2237/2813 ,  H01J2237/2817 ,  H01J2237/304

摘要： Electron beam is irradiated to a wafer in the midst of steps at predetermined intervals by a plurality of times under a condition in which a junction becomes rearward bias and a difference in characteristic of a time period of alleviating charge in the rearward bias is monitored. As a result, charge is alleviated at a location where junction leakage is caused in a time period shorter than that of a normal portion and therefore, a potential difference is produced between the normal portion and a failed portion and is observed in a potential contrast image as a difference in brightness. By consecutively repeating operation of acquiring the image, executing an image processing in real time and storing a position and brightness of the failed portion, the automatic inspection of a designated region can be executed. Information of image, brightness and distribution of the failed portion is preserved and outputted automatically after inspection.