公开(公告)号：US20170236768A1

公开(公告)日：2017-08-17

申请号：US15501374

申请日：2015-09-09

Applicant: HITACHI, LTD.

Inventor： Takashi NAITO ,  Motomune KODAMA ,  Takuya AOYAGI ,  Shigeru KIKUCHI ,  Takashi NOGAWA ,  Mutsuhiro MORI ,  Eiichi IDE ,  Toshiaki MORITA ,  Akitoyo KONNO ,  Taigo ONODERA ,  Tatsuya MIYAKE ,  Akihiko MIYAUCHI

IPC: H01L23/373 ,  H01L23/00 ,  C03C8/02 ,  C03C8/24 ,  C03C8/08

CPC classification number: H01L23/3733 ,  C03C3/122 ,  C03C3/125 ,  C03C3/21 ,  C03C8/02 ,  C03C8/08 ,  C03C8/18 ,  C03C8/24 ,  C09J1/00 ,  C09J11/04 ,  H01L21/52 ,  H01L23/3731 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/29211 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29287 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

公开(公告)号：US20160141126A1

公开(公告)日：2016-05-19

申请号：US14900240

申请日：2014-09-05

Applicant: Hitachi, Ltd.

Inventor： Shigeru KIKUCHI ,  Kunihiko TOMIYASU ,  Kenji TSUCHIYA ,  Takashi SATO ,  Ayumu MORITA

IPC: H01H33/664 ,  C22C27/04 ,  C22C30/02 ,  B22F3/26 ,  B22F1/00 ,  B22F5/12 ,  B22F3/02 ,  H01H33/666 ,  C22C9/00

CPC classification number: H01H33/6643 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/26 ,  B22F5/12 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2301/10 ,  B22F2301/20 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/04 ,  C22C1/0425 ,  C22C1/045 ,  C22C9/00 ,  C22C27/04 ,  C22C30/02 ,  H01H33/664 ,  H01H33/666 ,  H01H2201/03 ,  H01H2205/002 ,  B22F2201/01

Abstract: In an electrical contact in which aggregation phases including Cu are dispersed in a matrix phase including Mo, Cr, and Cu, a maximum grain size of the aggregation phases falls in a range of 4 to 20 μm and, when the total Cu content in the electrical contact is denoted by Wt, the Cu content in the matrix phase is expressed by C×Wt, where C ranges from 0.54 to 0.81. A process for producing an electrical contact including Mo, Cr, and Cu includes a step of compacting mixed Mo and Cr powders, thus forming a powder-compression compact and a step of making the powder-compression compact infiltrated with molten Cu.

Abstract translation: 在其中包含Cu的聚集相分散在包括Mo，Cr和Cu的基质相中的电接触中，聚集相的最大晶粒尺寸落在4至20μm的范围内，并且当Cu 电接触由Wt表示，基质相中的Cu含量由C×Wt表示，C为0.54〜0.81。 用于制造包括Mo，Cr和Cu的电接触的方法包括压实混合的Mo和Cr粉末的步骤，从而形成粉末压缩压块，以及使熔融的Cu浸渍的粉末压缩压块的步骤。

公开(公告)号：US20140076852A1

公开(公告)日：2014-03-20

申请号：US13973690

申请日：2013-08-22

Applicant: Hitachi, Ltd.

Inventor： Shigeru KIKUCHI ,  Ayumu MORITA ,  Kenji TSUCHIYA ,  Masato YABU ,  Akio NAKAZAWA

IPC: H01H1/025 ,  H01H1/029

CPC classification number: H01H1/025 ,  H01H1/0206 ,  H01H1/029 ,  H01H33/6643

Abstract: Provided an electrical contact is cheap, excellent workability and lasts the effect of chopping current reduction. An electrical contact comprising a Cu matrix, and compounds Cu and low melting point metal which are dispersed in the Cu matrix, wherein a vapor pressure of the low melting point metal is more than 105 Pa at 1000° C., the compound has stoichiometric ratio which is the value of the low melting metal/Cu is greater than 0.5, and a longitudinal direction of the compound is oriented at an angle of 90°±10° to the contact surfaces. The method of the electrical contact is stretching mixture the Cu matrix with the compounds at 70-85% while heating, using as a contact surfaces of the electrical contact.

Abstract translation: 提供电接触便宜，可加工性优异，并且持续切断电流降低的效果。 包含Cu基体和分散在Cu基体中的化合物Cu和低熔点金属的电接触，其中低熔点金属的蒸气压在1000℃下大于105Pa，该化合物具有化学计量比 低熔点金属/ Cu的值大于0.5，化合物的长度方向与接触面成90°±10°的角度。 电接触的方法是使用作为电接触的接触表面的加热将铜基质与化合物在70-85％下进行拉伸混合。