公开(公告)号：US20140147661A1

公开(公告)日：2014-05-29

申请号：US14092064

申请日：2013-11-27

Applicant: Hitachi, Ltd.

Inventor： Yusuke YASUDA ,  Toshiaki MORITA ,  Yoshio KOBAYASHI ,  Kazuhiro INOUE ,  Masachika HAMA

IPC: H01B3/12

CPC classification number: H01B3/12 ,  B01J13/0013 ,  B01J13/0034 ,  B01J13/0047 ,  C01F7/34 ,  C01F7/36 ,  C01F7/441 ,  C01P2004/64 ,  Y10T428/257

Abstract: An aluminum salt is dissolved into water as a solvent to prepare an aqueous solution of the aluminum salt. Urea is added to the aqueous solution of the aluminum salt to be dissolved into the solution. The solution is heated to produce a precipitation of aluminum hydroxide. A deflocculant is added to deflocculate the precipitation. Thus, a sol is produced which contains colloidal particles of aluminum hydroxide and crystalline particles of aluminum oxide. An even and dense alumina thin film can be produced by using the sol on a surface of a substrate made of a metal having a low melting point, such as copper or aluminum.

Abstract translation: 将铝盐溶解在水中作为溶剂以制备铝盐的水溶液。 将尿素加入到铝盐的水溶液中以溶解到溶液中。 将溶液加热以产生氢氧化铝沉淀。 添加絮凝剂来絮凝沉淀。 因此，制造含有氢氧化铝的胶体粒子和氧化铝的结晶粒子的溶胶。 通过在由具有低熔点的金属如铜或铝制成的基板的表面上使用溶胶，可以制造均匀且致密的氧化铝薄膜。

公开(公告)号：US20170236768A1

公开(公告)日：2017-08-17

申请号：US15501374

申请日：2015-09-09

Applicant: HITACHI, LTD.

Inventor： Takashi NAITO ,  Motomune KODAMA ,  Takuya AOYAGI ,  Shigeru KIKUCHI ,  Takashi NOGAWA ,  Mutsuhiro MORI ,  Eiichi IDE ,  Toshiaki MORITA ,  Akitoyo KONNO ,  Taigo ONODERA ,  Tatsuya MIYAKE ,  Akihiko MIYAUCHI

IPC: H01L23/373 ,  H01L23/00 ,  C03C8/02 ,  C03C8/24 ,  C03C8/08

CPC classification number: H01L23/3733 ,  C03C3/122 ,  C03C3/125 ,  C03C3/21 ,  C03C8/02 ,  C03C8/08 ,  C03C8/18 ,  C03C8/24 ,  C09J1/00 ,  C09J11/04 ,  H01L21/52 ,  H01L23/3731 ,  H01L23/3735 ,  H01L24/29 ,  H01L25/07 ,  H01L25/18 ,  H01L2224/29211 ,  H01L2224/29224 ,  H01L2224/29239 ,  H01L2224/29247 ,  H01L2224/29287 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

公开(公告)号：US20170278589A1

公开(公告)日：2017-09-28

申请号：US15510865

申请日：2015-11-18

Applicant: HITACHI, LTD.

Inventor： Yusuke YASUDA ,  Toshiaki MORITA ,  Yoshio KOBAYASHI ,  Takafumi MAEDA

IPC: H01B1/22 ,  H01R4/02 ,  B82Y30/00 ,  C01G3/02 ,  H01L21/52

CPC classification number: H01B1/22 ,  B22F1/007 ,  B22F3/1003 ,  B22F9/24 ,  B82Y30/00 ,  C01G3/02 ,  C01P2002/72 ,  C01P2004/62 ,  C01P2004/80 ,  C22C1/05 ,  H01L21/52 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/40225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/19107 ,  H01R4/02 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided are: a sintering binder including nanoparticles, a method for producing the sintering binder, and a method for bonding using the sintering binder. The sintering binder mainly includes cuprous oxide nanoparticles, combines particle stability with bondability, and less undergoes ion migration. A composite particle including metallic copper with the remainder being cuprous oxide and inevitable impurities is used for bonding typically of metals. The composite particle structurally includes metallic copper dispersed inside the particle and has an average particle size of 1000 nm or less.

公开(公告)号：US20130299962A1

公开(公告)日：2013-11-14

申请号：US13870216

申请日：2013-04-25

Applicant: HITACHI, LTD.

Inventor： Eiichi IDE ,  Toshiaki MORITA

IPC: H01L23/34

CPC classification number: H01L23/34 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

Abstract: A semiconductor device includes an IGBT as a vertical semiconductor element provided between first, and second lead frames, in pairs, the first, and second lead frames being opposed to each other, first and second sintered-metal bonding layers provided on first and second bonding surfaces of the IGBT, in pairs, respectively, a through-hole opened in the second lead frame, and a heat-release member having a surface on one side thereof, bonded to a second sintered-metal bonding layer of the second bonding surface while a side (lateral face) of a surface of the heat-release member, on the other side thereof, being fitted into the through-hole. A solder layer is formed in a gap between an outer-side wall of the side of the surface of the heat-release member, on the other side thereof, and an inner-side wall of the through-hole.

Abstract translation: 半导体器件包括：IGBT作为垂直半导体元件，设置在成对的第一和第二引线框之间，第一和第二引线框彼此相对;第一和第二烧结金属接合层，设置在第一和第二接合 IGBT的表面分别成对地形成在第二引线框架中开口的通孔，以及在其一侧具有表面的散热构件，其结合到第二接合表面的第二烧结金属接合层，同时 散热构件的另一侧的表面的侧面（侧面）嵌合在通孔中。 在散热构件的表面的另一侧的外侧壁与通孔的内侧壁之间的间隙中形成焊料层。