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1.发明申请公开(公告)号：US20150361303A1
公开(公告)日：2015-12-17
申请号：US14797294
申请日：2015-07-13
发明人： Yousuke HOSHI , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/762 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
摘要翻译： 公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。 本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高的氧化硅膜和阻挡膜的抛光速率比的抛光剂 。 本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。
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公开(公告)号：US10040971B2
公开(公告)日：2018-08-07
申请号：US15274812
申请日：2016-09-23
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , C09G1/04 , B24B37/04 , C09K3/14 , H01L21/3105 , H01L21/306 , H01L21/762
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
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公开(公告)号：US09129900B2
公开(公告)日：2015-09-08
申请号：US13891064
申请日：2013-05-09
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , C09K3/14 , H01L21/3105
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
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4.发明授权公开(公告)号：US09165777B2
公开(公告)日：2015-10-20
申请号：US13891064
申请日：2013-05-09
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , C09K3/14 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
摘要翻译： 公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。 本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高氧化硅膜和阻挡膜的抛光速率比的抛光剂 。 本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。
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