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1.发明申请公开(公告)号：US20150361303A1
公开(公告)日：2015-12-17
申请号：US14797294
申请日：2015-07-13
发明人： Yousuke HOSHI , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/762 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
摘要翻译： 公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。 本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高的氧化硅膜和阻挡膜的抛光速率比的抛光剂 。 本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。
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公开(公告)号：US11118005B2
公开(公告)日：2021-09-14
申请号：US16338840
申请日：2016-10-03
发明人： Kazuyuki Kamo , Hirotaka Sakuma , Kenichi Ishitsuka , Tomotsugu Sugioka , Yuki Yoshinari , Ryo Honna , Daisuke Ryuzaki
摘要： Embodiments of the present invention relate to a composition containing a polymer or oligomer (A) and an initiator (B), wherein the polymer or oligomer (A) contains no alkyl groups of 5 or more carbon atoms, contains at least one type of structural unit selected from the group consisting of a structural unit containing an aromatic amine structure and a structural unit containing a carbazole structure, and contains, at one or more terminals, a structural unit containing a thienyl group which may have a substituent, and a degree of solubility of the composition is capable of being changed by applying heat, light, or both heat and light.
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公开(公告)号：US10703947B2
公开(公告)日：2020-07-07
申请号：US15970353
申请日：2018-05-03
IPC分类号： C09K3/14 , B24B37/04 , H01L21/3105 , C09G1/02
摘要： The slurry of the invention comprises abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. The polishing liquid of the invention comprises abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.
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4.发明授权公开(公告)号：US09165777B2
公开(公告)日：2015-10-20
申请号：US13891064
申请日：2013-05-09
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , C09K3/14 , H01L21/3105
CPC分类号： C09G1/02 , B24B37/044 , C09K3/1463 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/76224
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
摘要翻译： 公开了一种抛光剂，其包括：水; 四价金属氢氧化物颗粒; 和添加剂，其中所述添加剂含有阳离子聚合物和阳离子多糖中的至少一种。 本发明可以提供一种抛光剂，其能够在平坦化绝缘膜的CMP技术中以高速抛光较少的抛光缺陷并且具有高氧化硅膜和阻挡膜的抛光速率比的抛光剂 。 本发明还可以提供用于储存抛光剂的抛光剂组，以及使用该研磨剂研磨基材的方法。
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公开(公告)号：US10040971B2
公开(公告)日：2018-08-07
申请号：US15274812
申请日：2016-09-23
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , C09G1/04 , B24B37/04 , C09K3/14 , H01L21/3105 , H01L21/306 , H01L21/762
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
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公开(公告)号：US09129900B2
公开(公告)日：2015-09-08
申请号：US13891064
申请日：2013-05-09
发明人： Yousuke Hoshi , Daisuke Ryuzaki , Naoyuki Koyama , Shigeru Nobe
IPC分类号： C09G1/02 , H01L21/306 , B24B37/04 , C09K3/14 , H01L21/3105
摘要： Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.
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