公开(公告)号：US12132411B2

公开(公告)日：2024-10-29

申请号：US17763840

申请日：2019-10-07

Applicant: Hitachi High-Tech Corporation

Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

IPC: H02M7/10 ,  H01J19/02 ,  H01J37/24 ,  H02M1/14 ,  H02M7/06 ,  H05H5/04

CPC classification number: H02M7/103 ,  H01J19/02 ,  H01J37/241 ,  H02M1/14 ,  H02M7/062 ,  H02M7/10 ,  H05H5/045 ,  H01J2203/02

Abstract: The invention provides a power supply module and a charged particle beam device that are capable of reducing ripple noise. A high-voltage generation circuit 101 includes booster circuits CPa and CPb of two systems that are configured to be symmetrical to each other, and performs a boosting operation by using a capacitive element and a diode in the booster circuits CPa and CPb of the two systems. The high-voltage generation circuit is housed in a housing and a reference power supply voltage is applied thereto. A left electrode 102a is fixedly provided in the vicinity of one of the booster circuits CPa and CPb of the two systems in the housing, and a right electrode 102b is fixedly provided in the vicinity of the other of the booster circuits CPa and CPb of the two systems in the housing. A stray capacitance adjustment circuit 100a adjusts capacitance values of stray capacitances of the booster circuits CPa and CPb of the two systems by electrically controlling an electrical connection characteristic between the left electrode 102a and the reference power supply voltage 104 and an electrical connection characteristic between the right electrode 102b and the reference power supply voltage 104.

公开(公告)号：US11735395B2

公开(公告)日：2023-08-22

申请号：US17388704

申请日：2021-07-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takayasu Iwatsuka ,  Tomoyo Sasaki ,  Wen Li ,  Ryo Kadoi ,  Makoto Suzuki

IPC: H01J37/244 ,  G01R29/26 ,  H01J37/24 ,  H01J37/20

CPC classification number: H01J37/244 ,  G01R29/26 ,  H01J37/20 ,  H01J37/24

Abstract: To provide a technique capable of measuring high-frequency electrical noise in a charged particle beam device. A charged particle beam device 100 includes an electron source 2 for generating an electron beam EB1, a stage 4 for mounting a sample 10, a detector 5 for detecting secondary electrons EB2 emitted from the sample 10, and a control unit 7 electrically connected to the electron source 2, the stage 4, and the detector 5 and can control the electron source 2, the stage 4, and the detector 5. Here, when the sample 10 is mounted on the stage 4, and a specific portion 11 of the sample 10 is continuously irradiated with the electron beam EB1 from the electron source 2, the control unit 7 can calculate a time-series change in irradiation position of the electron beam EB1 based on an amount of the secondary electrons EB2 emitted from the specific portion 11, and can calculate a feature quantity for a shake of the electron beam EB1 based on the time-series change in irradiation position. Further, the feature quantity includes a frequency spectrum.

公开(公告)号：US20220037109A1

公开(公告)日：2022-02-03

申请号：US17388704

申请日：2021-07-29

Applicant: Hitachi High-Tech Corporation

Inventor： Takayasu Iwatsuka ,  Tomoyo Sasaki ,  Wen Li ,  Ryo Kadoi ,  Makoto Suzuki

IPC: H01J37/244 ,  H01J37/20 ,  H01J37/24 ,  G01R29/26

Abstract: To provide a technique capable of measuring high-frequency electrical noise in a charged particle beam device. A charged particle beam device 100 includes an electron source 2 for generating an electron beam EB1, a stage 4 for mounting a sample 10, a detector 5 for detecting secondary electrons EB2 emitted from the sample 10, and a control unit 7 electrically connected to the electron source 2, the stage 4, and the detector 5 and can control the electron source 2, the stage 4, and the detector 5. Here, when the sample 10 is mounted on the stage 4, and a specific portion 11 of the sample 10 is continuously irradiated with the electron beam EB1 from the electron source 2, the control unit 7 can calculate a time-series change in irradiation position of the electron beam EB1 based on an amount of the secondary electrons EB2 emitted from the specific portion 11, and can calculate a feature quantity for a shake of the electron beam EB1 based on the time-series change in irradiation position. Further, the feature quantity includes a frequency spectrum.

公开(公告)号：US11694871B2

公开(公告)日：2023-07-04

申请号：US17394604

申请日：2021-08-05

Applicant: Hitachi High-Tech Corporation

Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

IPC: H01J37/20 ,  H01L21/683 ,  H01J37/22

CPC classification number: H01J37/20 ,  H01J37/222 ,  H01L21/6831 ,  H01J2237/2007

Abstract: Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

公开(公告)号：US20220059312A1

公开(公告)日：2022-02-24

申请号：US17394604

申请日：2021-08-05

Applicant: Hitachi High-Tech Corporation

Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

IPC: H01J37/20 ,  H01J37/22 ,  H01L21/683

Abstract: Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.

公开(公告)号：US11017981B2

公开(公告)日：2021-05-25

申请号：US16572943

申请日：2019-09-17

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

IPC: H01J37/244 ,  H01J37/20

Abstract: A charged particle beam system includes a charged particle beam device 101 and the detection circuit 114. The charged particle beam device 101 includes a first antenna 102 having a first resonant frequency and a second antenna 103 having a second resonant frequency. The detection circuit 114 includes a first amplitude detection unit 110 which detects a first amplitude of a signal after passing a first filter 107, a second amplitude detection unit 111 which detects a second amplitude of a signal after passing a second filter 108, and an amplitude comparison unit 113 which compares the first amplitude with the second amplitude.

公开(公告)号：US10973112B2

公开(公告)日：2021-04-06

申请号：US16631256

申请日：2017-07-18

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Ryo Kadoi ,  Wen Li ,  Naoya Ishigaki

IPC: H05H5/03 ,  H01J37/06 ,  H01J37/24 ,  H01J37/244

Abstract: The present invention prevents breakage of a chip by using a simple configuration even when an extraction-electrode power source cannot apply voltage to an extraction electrode due to a malfunction, etc. This charged particle beam device is provided with: a charged particle source; an extraction electrode that extracts charged particles from the charged particle source; an extraction-electrode power source that applies voltage to the extraction electrode; an accelerating electrode for accelerating the charged particles; an accelerating power source that applies voltage to the accelerating electrode; and a diode and a resistor which are connected in series between a middle stage of the accelerating power source and the output side of the extraction-electrode power source.