公开(公告)号：US11664233B2

公开(公告)日：2023-05-30

申请号：US17386892

申请日：2021-07-28

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Tomoyuki Tamura ,  Kazuyuki Ikenaga

IPC: H01L21/3065 ,  H01L21/32 ,  H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32788 ,  H01L21/67069 ,  H01L21/6833

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

公开(公告)号：US12112925B2

公开(公告)日：2024-10-08

申请号：US17574081

申请日：2022-01-12

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

CPC classification number: H01J37/32532 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32706 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US20220359172A1

公开(公告)日：2022-11-10

申请号：US17866687

申请日：2022-07-18

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kazuyuki Ikenaga ,  Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone

IPC: H01J37/32

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

公开(公告)号：US20220139678A1

公开(公告)日：2022-05-05

申请号：US17574081

申请日：2022-01-12

Applicant: Hitachi High-Tech Corporation

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

公开(公告)号：US12191121B2

公开(公告)日：2025-01-07

申请号：US17866687

申请日：2022-07-18

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kazuyuki Ikenaga ,  Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

公开(公告)号：US11424108B2

公开(公告)日：2022-08-23

申请号：US14834404

申请日：2015-08-24

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Kazuyuki Ikenaga ,  Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

公开(公告)号：US11257661B2

公开(公告)日：2022-02-22

申请号：US14788759

申请日：2015-06-30

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Masaki Ishiguro ,  Masahiro Sumiya ,  Shigeru Shirayone ,  Kazuyuki Ikenaga ,  Tomoyuki Tamura

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.