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公开(公告)号：US20220157580A1
公开(公告)日：2022-05-19
申请号：US16971255
申请日：2019-07-30
发明人： Shota Umeda , Kenji Tamaki , Masahiro Sumiya , Masaki Ishiguro
摘要： In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution.
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公开(公告)号：US20220139678A1
公开(公告)日：2022-05-05
申请号：US17574081
申请日：2022-01-12
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.
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公开(公告)号：US11664233B2
公开(公告)日：2023-05-30
申请号：US17386892
申请日：2021-07-28
IPC分类号： H01L21/3065 , H01L21/32 , H01L21/67 , H01J37/32 , H01L21/683
CPC分类号： H01L21/3065 , H01J37/32706 , H01J37/32715 , H01J37/32788 , H01L21/67069 , H01L21/6833
摘要： A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.
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4.发明授权公开(公告)号：US11531848B2
公开(公告)日：2022-12-20
申请号：US16959093
申请日：2019-07-26
发明人： Masaki Ishiguro
IPC分类号： G06F119/18 , G06K9/62 , G06N20/00 , G06F30/27 , G06F7/24
摘要： A data processing apparatus in which a trade-off between over-learning prevention and calculation load prevention is eliminated when creating a model formula is provided. The data processing apparatus includes: a recording unit that records electronic data; and a computing unit that performs computing using the electronic data, in which the computing unit includes a feature amount selection unit used for computing, and the feature amount selection unit performs feature amount selection including: a first step (S101) of ranking feature amounts and rearranging the feature amounts from top; a second step (S103) of creating a plurality of data groups using only a part of the feature amounts according to the order; a third step (S104) of calculating a value that is an index for evaluating prediction performance of a regression or classification problem using each of the data groups using only a part of the feature amounts; a fourth step (S105) of deleting feature amounts based on the calculated prediction performance index; and a fifth step (S106) of updating the order of the feature amounts, which are feature amounts other than the deleted feature amount, using the prediction performance index, in which the second step to the fifth steps are iterated (S102) until an optimal value of the prediction performance index calculated in the third step is no longer updated.
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公开(公告)号：US12112925B2
公开(公告)日：2024-10-08
申请号：US17574081
申请日：2022-01-12
IPC分类号： H01J37/32
CPC分类号： H01J37/32532 , H01J37/32082 , H01J37/32146 , H01J37/32706 , H01J37/32935 , H01J37/3299
摘要： A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.
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公开(公告)号：US12040167B2
公开(公告)日：2024-07-16
申请号：US16971255
申请日：2019-07-30
发明人： Shota Umeda , Kenji Tamaki , Masahiro Sumiya , Masaki Ishiguro
CPC分类号： H01J37/32917 , G01M99/005 , G06N7/01 , H01J2237/24578
摘要： In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution.
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公开(公告)号：US20220359172A1
公开(公告)日：2022-11-10
申请号：US17866687
申请日：2022-07-18
IPC分类号： H01J37/32
摘要： Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.
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公开(公告)号：US12050455B2
公开(公告)日：2024-07-30
申请号：US16533273
申请日：2019-08-06
发明人： Masaki Ishiguro , Masahiro Sumiya
IPC分类号： G05B19/418
CPC分类号： G05B19/41885 , G05B2219/45031
摘要： Provided is a state prediction apparatus that predicts a state of the plasma processing apparatus, a first set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus in a normal state, a second set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus, the features in the second set are calculated by using the features in the first set, a model that predicts the state of the plasma processing apparatus is generated by using a subset of the first set of features, which is composed of the same kind of features selected in descending order of the calculated features in the second set, and the state of the plasma processing apparatus is predicted by using the generated model.
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公开(公告)号：US11424108B2
公开(公告)日：2022-08-23
申请号：US14834404
申请日：2015-08-24
摘要： Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.
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公开(公告)号：US11257661B2
公开(公告)日：2022-02-22
申请号：US14788759
申请日：2015-06-30
IPC分类号： H01J37/32
摘要： A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.
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