-
1.发明申请公开(公告)号：US20180019096A1
公开(公告)日：2018-01-18
申请号：US15544958
申请日：2016-01-21
发明人： Takashi ICHIMURA , Hiroyuki ITO , Shinichi KATO , Hisaya MURAKOSHI , Tadashi FUJIEDA , Tatsuya MIYAKE , Takashi NAITOU , Takuya AOYAGI , Kenji TANIMOTO
CPC分类号： H01J37/16 , C23D5/02 , H01J9/18 , H01J37/065 , H01J37/12 , H01J37/147 , H01J37/3178
摘要： The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.
-
公开(公告)号：US20190108969A1
公开(公告)日：2019-04-11
申请号：US16088880
申请日：2016-03-28
IPC分类号： H01J37/147 , H01J37/22 , H01J37/29
CPC分类号： H01J37/147 , H01J37/04 , H01J37/05 , H01J37/224 , H01J37/226 , H01J37/29
摘要： The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system. The charged particle beam device is provided with: a light source that emits light toward the object; and a control device that obtains, on the basis of detection charged particles generated according to irradiation of light emitted from the light source, a plurality of deflection signals which maintain a certain deflection state, and that selects or calculates, from the plurality of deflection signals or from relationship information produced from the plurality of deflection signals, a deflection signal that satisfies a predetermined condition.
-
公开(公告)号：US20200292466A1
公开(公告)日：2020-09-17
申请号：US16084155
申请日：2016-03-16
IPC分类号： G01N21/94 , G01N23/2251 , H01J37/28
摘要： The purpose of the present invention is to provide a defect inspection device that can evaluate a defect having a long latent flaw with high precision. A defect inspection device of the present invention is characterized by being provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; an imaging element at which an image of electrons (mirror electrons) reflected without reaching the sample is formed via a retarding electric field formed on the sample; an ultraviolet light source that emits an ultraviolet light toward the sample; a movement stage that moves the sample support member; and a control device that controls the movement stage. The defect inspection device is further characterized in that the control device controls the movement stage such that a portion of a linear part included in an image of the sample (or a location on an extensional line of the linear part) is positioned at a specific location in an irradiated region of the electron beam, and repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.
-
公开(公告)号：US20200279714A1
公开(公告)日：2020-09-03
申请号：US16645649
申请日：2017-09-20
IPC分类号： H01J37/22 , H01J37/244
摘要： In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages. The image processing device generates a control signal for controlling the potential difference on the basis of the acquired signal, and optimizes defect contrast by controlling the reflection surface of the mirror electrons.
-
公开(公告)号：US20200152415A1
公开(公告)日：2020-05-14
申请号：US16660152
申请日：2019-10-22
摘要： In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.
-
公开(公告)号：US20190079025A1
公开(公告)日：2019-03-14
申请号：US16084395
申请日：2016-03-16
IPC分类号： G01N21/95 , G01N23/203 , H01J37/29 , G01N21/88
摘要： The purpose of the present invention is to provide a defect inspection device with which it is possible to detect a latent flaw with a high precision or at a high speed. In order to fulfill this purpose, this defect inspection device is provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; a negative voltage applying power source for forming a retarding electric field in relation to the electron beam that irradiates the sample supported by the sample support member; an imaging element at which an image of electrons reflected without reaching the sample is formed via the retarding electric field; an ultraviolet light source that emits an ultraviolet light toward the sample; and a computation processing device that processes an image generated on the basis of a signal obtained by the imaging element. The computation processing device determines the type of defect in the sample on the basis of a plurality of image signals obtained when the ultraviolet light was emitted under at least two emitting conditions.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.057 秒)
