公开(公告)号：US20140137059A1

公开(公告)日：2014-05-15

申请号：US14159465

申请日：2014-01-21

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji NISHIO ,  Tadamitsu KANEKIYO ,  Yoshiyuki OOTA ,  Tsuyoshi MATSUMOTO

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G06F17/5086 ,  H01J37/32082 ,  H01J37/32642 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/6875

Abstract: Plasma processing focus ring design arrangements, including: acquiring a surface voltage and a sheath thickness above a surface of the object to be processed, and a surface voltage and a sheath thickness above a surface of the focus ring, by an equivalent circuit analysis; performing 2D plasma and 2D electric field analysis, based on the equivalent circuit analysis; and designing configuration of the focus ring and the processing stage, to achieve a plasma-sheath interface flattening condition by making a sum of a height from a height reference point to a surface of the object and a sheath thickness from the surface of the object to a plasma-sheath interface above the object, equal to a sum of a height from the height reference point to a surface of the focus ring and a sheath thickness from the surface of the focus ring to a plasma-sheath interface above the focus ring.

Abstract translation: 等离子体处理聚焦环设计布置，包括：通过等效电路分析获得待处理物体表面上方的表面电压和护套厚度，以及聚焦环表面上方的表面电压和护套厚度; 基于等效电路分析进行2D等离子体和2D电场分析; 以及设计聚焦环和处理阶段的配置，通过从物体的表面到物体表面的高度和从皮肤表面到外部的厚度的和来实现等离子体 - 皮肤界面平坦化的条件 物体上方的等离子体 - 鞘界面等于从高度参考点到聚焦环表面的高度和从聚焦环表面到聚焦环上方的等离子体鞘界面的鞘厚度之和。

公开(公告)号：US20150020970A1

公开(公告)日：2015-01-22

申请号：US14508859

申请日：2014-10-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Eiji IKEGAMI ,  Shoji IKUHARA ,  Takeshi SHIMADA ,  Kenichi KUWABARA ,  Takao ARASE ,  Tsuyoshi MATSUMOTO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32963 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32917 ,  H01J37/32926 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/1825 ,  H01J2237/327 ,  H01L21/67069 ,  H01L21/67242 ,  H05H1/46

Abstract: Plasma processing of plural substrates is performed in a plasma processing apparatus, which is provided with a plasma processing chamber having an antenna electrode and a lower electrode for placing and retaining the plural substrates in turn within the plasma processing chamber, a gas feeder for feeding processing gas into the processing chamber, a vacuum pump for discharging gas from the processing chamber via a vacuum valve, and a solenoid coil for forming a magnetic field within the processing chamber. At least one of the plural substrates is placed on the lower electrode, and the processing gas is fed into the processing chamber. RF power is fed to the antenna electrode via a matching network to produce a plasma within the processing chamber in which a magnetic field has been formed by the solenoid coil. This placing of at least one substrate and this feeding of the processing gas are then repeated until the plasma processing of all of the plural substrates is completed. An end of seasoning is determined when a parameter including an internal pressure of the processing chamber has become stable to a steady value with plasma processing time.

Abstract translation: 在具有等离子体处理室的等离子体处理装置中进行多个基板的等离子体处理，该等离子体处理室具有用于在等离子体处理室内依次放置和保持多个基板的天线电极和下部电极，供给处理用气体供给装置 气体进入处理室，用于经由真空阀从处理室排出气体的真空泵和用于在处理室内形成磁场的螺线管线圈。 多个基板中的至少一个被放置在下电极上，并且处理气体被馈送到处理室中。 RF功率经由匹配网络馈送到天线电极，以在处理室内产生等离子体，其中已经由螺线管线圈形成了磁场。 然后重复这种至少一个基板的放置和该处理气体的进料，直至完成所有多个基板的等离子体处理。 当包括处理室的内部压力的参数在具有等离子体处理时间的稳定值变得稳定时，确定调味品的结束。