摘要:
A piezoelectric ceramic material comprising a bismuth layer compound containing MII, Bi, Ti and O wherein MII is selected from Sr, Ba and Ca, and containing MIIBi4Ti4O15 type crystals, wherein MII, is represented by SrxBayCaz wherein x+y+z=1, utilizes thickness shear vibration when 0≦x≦ 1, 0≦y≦0.9, and 0≦z≦1, and thickness extensional vibration when 0≦x
摘要翻译:一种包含含有MII,Bi,Ti和O的铋层化合物的压电陶瓷材料,其中MII选自Sr,Ba和Ca,并含有MIIBi4Ti4O15型晶体,其中MII由SrxBayCaz表示,其中x + y + z = 1, 当0 <= x <= 1,0 <= y <= 0.9,0 <= z <= 1时使用厚度剪切振动,当0 <= x <0.9,0 <= y <= 0.9时, 0 <= z <1。 还提供了包含含有Ca,Bi,Ti,Ln和0的铋层化合物的压电陶瓷材料,其中Ln是镧系元素,并且含有CaBi 4 Ti 4 O 15型晶体,其中原子比Ln /(Ln + Ca)在以下范围内: 0
摘要:
Piezoelectric ceramics include a bismuth layer compound containing MII, Bi, Ti, Ln and O, wherein MII represents at least one element selected from the group consisting of Sr, Ba and Ca, and Ln represents at least one element selected from the group consisting of lanthanoids. The piezoelectric ceramics include MIIBi4Ti4O15 typed crystals, and a mole ratio of Ln/(Ln+MII) is 0
摘要:
Piezoelectric ceramics which is made of compounds shaped in bismuth layer containing Sr, Bi, Ti and Ln (lanthanoid). The compound contains SrBi4Ti4O15 typed crystals. In the piezoelectric ceramics, an atomic ratio of Ln/(Sr+Ln) is 0
摘要翻译:由含有Sr,Bi,Ti和Ln(镧系元素)的铋层中形成的化合物制成的压电陶瓷。 该化合物包含SrBi 4 SMALLCAPS> Ti 4 SMALLCAPS> O 15 SMALLCAPS>型晶体。 在压电陶瓷中,Ln /(Sr + Ln)的原子比为0
摘要:
A piezoelectric ceramics having ceramic particles, wherein said ceramic particles comprises bismuth layer compound containing at least Sr, Ln (note that Ln is a lanthanoid element), Bi, Ti and O and including MIIBi4Ti4O15 type crystal (MII is an element composed of Sr and Ln) as a main component, and an oxide of Mn as a subcomponent; and an average particle diameter by the code length measuring method is 0.8 to 4.7 μm: by which it is possible to provide piezoelectric ceramics having a large Qmax in a third harmonic mode of thickness vertical vibration in a relatively high frequency band (for example, 16 to 65 MHz), a resonator an other piezoelectric element comprising the piezoelectric ceramics as a piezoelectric substance thereof.
摘要:
A piezoelectric ceramic is a bismuth-layer compound having SrBi4Ti4O15-type crystal. The axial ratio c/a of crystal lattice is in the range of 7.46 to 7.67.
摘要翻译:压电陶瓷是具有SrBi 4 Ti 4 O 15型晶体的铋层化合物。 晶格的轴比c / a在7.46〜7.67的范围内。
摘要:
To obtain a piezoelectric ceramic composition having extremely high heat resisting property. Provided is a piezoelectric ceramic composition comprising a main component represented by Pba[(MnbNbc)dTieZrf]O3 (wherein 0.98≦a≦1.01, 0.340≦b≦0.384, 0.616≦c≦0.660, 0.08≦d≦0.12, 0.500≦e≦0.540, 0.37≦f≦0.41, bd+cd+e+f=1), and 1 to 10% by weight of Al in terms of Al2O3 as an additive. Preferably, b is such that 0.345≦b≦0.375 and c is such that 0.625≦c≦0.655, and the Al as the additive is preferably 2 to 6% by weight in terms of Al2O3.
摘要翻译:得到具有极高耐热性的压电陶瓷组合物。 本发明提供一种压电陶瓷组合物,其包含以下组分表示的主要成分:[(N,B)Nb C' (其中0.98 <= a <= 1.01,0.340 <= b <= 0.384,0.616 <= c 根据这个术语,<= 0.660,0.08 <= d <= 0.12,0.500 <= e <= 0.540,0.37 <= f <= 0.41,bd + cd + e + f = 1)和1〜10重量% 的Al 2 O 3 3作为添加剂。 优选地,b为0.345≤b≤0.375,c为0.625 <= c <= 0.655,作为添加剂的Al优选为2〜6重量% 3&gt; 3&lt; 3&gt ;.
摘要:
A piezoelectric ceramic composition excellent in heat resisting properties is provided. In the piezoelectric ceramic composition including a perovskite compound containing Pb, Zr and Ti as main components, the piezoelectric ceramic composition is made to include Cr as an additive from 0.025 to 0.250 wt % in terms of Cr2O3. In the piezoelectric ceramic composition of the present invention, Δk15 (here, Δk15 is the rate of change in electromechanical coupling factor k15, caused by external thermal shock), of the piezoelectric ceramic composition can be controlled to 3.0% or less in absolute value.
摘要翻译:提供耐热性优异的压电陶瓷组合物。 在包含以Pb,Zr和Ti为主要成分的钙钛矿化合物的压电陶瓷组合物中,压电陶瓷组合物包含Cr作为添加剂,以Cr 2 O 2计为0.025〜0.250重量% 3 SUB>。 在本发明的压电陶瓷组合物中,可以将压电陶瓷组合物的Deltak15(这里,Deltak15是由外部热冲击引起的机电耦合系数k15的变化率)控制在3.0%以下。
摘要:
A data output drive transistor is rendered conductive when the potential of an internal node attains an H level, whereby an output node is discharged to the level of ground potential. When the drive transistor is turned on, the output node is discharged to the level of ground potential at high speed. This drive transistor is turned on for a predetermined time period when output of a high level data is completed, whereby the output node is discharged to the level of the ground potential for a predetermined time period. As a result, the potential of the output node is lowered from a high level to an intermediate level, so that the amplitude of a subsequent output signal is reduced. An output circuit that can effectively prevent generation of ringing with no increase in the access time is provided. A countermeasure is provided to suppress a ringing at output node which drives the output node at high speed when the output node potential attains a potential at which no ringing is caused. A stable output signal is provided at high speed.
摘要:
There are provided steps of polarizing a ceramic composition including a perovskite compound containing Pb, Zr, Ti and Mn as main components and a heat treatment step for keeping the polarized ceramic composition within a temperature range lower than Tc (Tc denoting the Curie temperature of the ceramic composition) for 1 to 100 minutes.
摘要:
A piezoelectric substrate is constituted by a piezoelectric material of an effective Poisson's ratio being less than 1/3. The substrate has a pair of opposite faces and the opposite faces are provide with a pair of vibrating electrodes in correspondence. The opposite faces of the piezoelectric substrate are rectangular respectively. The sum of the lengths Lc of the one faces in the opposite faces 1a, 1b and the length Wc of the other side of the same is limited within range 2.22 mm≦≦2.24 mm or 2.34 mm≦≦2.48 mm, said one faces being vertical each other. The areas Sc of the opposite faces are 1.22 mm2≦Sc≦1.26 mm2 or 1.35 mm2≦Sc≦1.538 mm2. Accordingly, though using the piezoelectric material of the effective Poisson's ratio being less than 1/3, vibration in the thickness extensional fundamental waves can be steadily utilized.