公开(公告)号：US5031056A

公开(公告)日：1991-07-09

申请号：US267995

申请日：1988-11-04

申请人： Hitoshi Okada ,  Katsuya Nozawa ,  Shinichiro Terada

发明人： Hitoshi Okada ,  Katsuya Nozawa ,  Shinichiro Terada

IPC分类号： G11B15/43 ,  G11B15/665

CPC分类号： G11B15/43 ,  G11B15/6653

摘要： In a tape player configured to wind a tape pulled out of a cassette onto a rotary head to play the tape, a tension mechanism includes a mode member to control the position of a tension control member according to a selected tape mode so as to establish relative contact between a tension member and a tape under a constant pressure in a play mode and separate them in a stop mode.

摘要翻译： 在被配置为将从磁带拉出的磁带卷绕到旋转磁头上以便播放磁带的磁带机中，张紧机构包括：模制部件，用于根据所选择的磁带模式控制张力控制部件的位置，以便建立相对的 在播放模式下在恒定压力下在张力构件和带之间接触并在停止模式下分离它们。

公开(公告)号：US4899951A

公开(公告)日：1990-02-13

申请号：US262432

申请日：1988-10-24

申请人： Hitoshi Okada ,  Shinichiro Terada ,  Katsuya Nozawa

发明人： Hitoshi Okada ,  Shinichiro Terada ,  Katsuya Nozawa

IPC分类号： G11B15/22 ,  G11B15/32

CPC分类号： G11B15/22 ,  G11B15/32

摘要： Disclosed is a braking mechanism for use in a magnetic recording apparatus essentially comprising a single cam gear and a brake-releasing member. The cam gear and the brake releasing member are so operatively connected that a stepwise rotation of the cam puts selected brake releasers in different brake releasing positions. Specifically in the first releasing position only the supply reel of the apparatus can rotate freely; in the second releasing position the take-up reel of the apparatus can rotate freely, and the supply reel can rotate against a relatively weak resistance; in the third releasing position the take-up and supply reel brakes can rotate freely together; and in unreleased position the supply and take-up reels cannot rotate.The sequential releasing of selected brakes assures coordination of braking operations appropriate for tape-loading, unloading, quick winding, playing and stopping. Such a simple combination of a cam gear and a brake-releasing member according to present invention permits reduction of the number of required parts and the size of the brake control.

摘要翻译： 公开了一种用于基本上包括单个凸轮齿轮和制动释放构件的磁记录装置中的制动机构。 凸轮齿轮和制动器释放构件被可操作地连接，使得凸轮的逐步旋转将选择的制动器释放器放置在不同的制动释放位置。 具体地，在第一释放位置，设备的供带盘可以自由旋转; 在第二释放位置，装置的卷取卷轴可以自由旋转，并且供带盘可抵抗较弱的阻力旋转; 在第三次释放位置，卷取和制动卷盘制动器可以自由旋转; 并且在未发布位置，供应和收卷盘不能旋转。 选择的制动器的顺序释放确保了适合于带装载，卸载，快速卷绕，播放和停止的制动操作的协调。 根据本发明的凸轮齿轮和制动释放构件的这种简单组合允许减少所需部件的数量和制动控制的尺寸。

公开(公告)号：US5209427A

公开(公告)日：1993-05-11

申请号：US683422

申请日：1991-04-10

申请人： Katsumi Yamaguchi ,  Shinichiro Terada ,  Katsuya Nozawa ,  Toshiyuki Asanuma ,  Yukio Ito

发明人： Katsumi Yamaguchi ,  Shinichiro Terada ,  Katsuya Nozawa ,  Toshiyuki Asanuma ,  Yukio Ito

IPC分类号： G11B15/22

CPC分类号： G11B15/22

摘要： A brake mechanism including a brake member, an urging force switching member pivotable and movable among a plurality of specified positions, and a single elastic member arranged between the brake member and the urging force switching member. By switching one of the action positions of the urging force switching member to another, a different urging force is applied to the brake member from the single elastic member according to the action positions. A drive and control member separately performs a switch-over between the pressing position and the releasing position of the brake member and a switch-over of one of the action positions of the urging force switching member to another.

摘要翻译： 一种制动机构，包括制动部件，可在多个指定位置之间枢转和移动的推动力切换部件和布置在所述制动部件和所述推压力切换部件之间的单个弹性部件。 通过将促动力切换部件的动作位置中的一个切换到另一个，根据动作位置，从单个弹性部件向制动部件施加不同的推动力。 驱动和控制构件分别执行制动构件的按压位置和释放位置之间的切换以及将推动力切换构件的作用位置之一切换到另一个。

公开(公告)号：US4939602A

公开(公告)日：1990-07-03

申请号：US61054

申请日：1987-06-10

申请人： Kimichika Yamada ,  Hitoshi Okada ,  Hidenori Muramatsu ,  Katsuya Nozawa ,  Yoshihiko Goto ,  Hiroyuki Ohkawa

发明人： Kimichika Yamada ,  Hitoshi Okada ,  Hidenori Muramatsu ,  Katsuya Nozawa ,  Yoshihiko Goto ,  Hiroyuki Ohkawa

IPC分类号： G11B15/675

CPC分类号： G11B15/67547

摘要： A cassette holder mechanism includes right and left cassette holders independently supporting opposite side marginal portions of a cassette and having guide rollers inserted in guide holes of right and left chassis side walls. Each cassette holder includes a gap at its side portion which engages guide shafts attached to each chassis side wall.

摘要翻译： 盒式磁带机构包括独立地支撑盒的相对侧边缘部分的左右盒式磁带架，并且具有插入右侧和左侧底盘侧壁的导向孔中的导向辊。 每个盒座在其侧部具有接合附接到每个底盘侧壁的引导轴的间隙。

公开(公告)号：US4785362A

公开(公告)日：1988-11-15

申请号：US83581

申请日：1987-08-07

申请人： Katsuya Nozawa ,  Hidenori Muramatsu ,  Kimichika Yamada ,  Hitoshi Okada ,  Yoshihiko Goto ,  Hiroyuki Ohkawa

发明人： Katsuya Nozawa ,  Hidenori Muramatsu ,  Kimichika Yamada ,  Hitoshi Okada ,  Yoshihiko Goto ,  Hiroyuki Ohkawa

IPC分类号： G11B15/29 ,  F16H27/08 ,  G05G21/00 ,  G11B15/10 ,  G11B15/18 ,  G11B15/665 ,  F16H47/00 ,  F16H55/17

CPC分类号： G11B15/6653 ,  F16H27/08 ,  G05G21/00 ,  Y10T74/19084 ,  Y10T74/1914 ,  Y10T74/19874

摘要： A driving force branching gear mechanism, which is useful for a tape recorder provided with a rotary head, etc., is disclosed, in which a driving gear consisting of two great diameter cam gears fixed to each other in one body and two small diameter cam gears driven by the two great diameter cam gears, repsectively, are disposed and they are so arranged that each of the small diameter cam gears is driven, only when its gear section is in opposition to each of the great diameter cam gears and that its cut-off portion for fixation is located on the projecting portion of the cam section of each of the great diameter cam gears and fixed there, when the cam section of each of the small diameter cam gears is in opposition to the cut-off portion of the gear of each of the great diameter cam gears.

摘要翻译： 公开了一种驱动力分配齿轮机构，其用于具有旋转头等的带式记录器，其中由两个相互固定在一个主体中的两个大直径凸轮轴组成的驱动齿轮和两个小直径凸轮 由两个大直径凸轮齿轮驱动的齿轮被布置，并且它们被布置成使得每个小直径凸轮齿轮被驱动，只有当其齿轮部分与每个大直径凸轮齿轮相对时，并且其切口 每个大直径凸轮齿轮的凸轮部分的突出部分位于每个大直径凸轮齿轮的凸出部分上并固定在那里，当每个小直径凸轮齿轮的凸轮部分相对于 每个大直径凸轮齿轮的齿轮。

公开(公告)号：US07129168B2

公开(公告)日：2006-10-31

申请号：US10691500

申请日：2003-10-24

申请人： Katsuya Nozawa ,  Tohru Saitoh ,  Teruhito Ohnishi

发明人： Katsuya Nozawa ,  Tohru Saitoh ,  Teruhito Ohnishi

IPC分类号： H01L21/44

CPC分类号： G01K11/02 ,  Y10S438/933

摘要： A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer (103) on a SiGe layer (102) formed on a substrate for temperature estimation (101) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer (103) and the substrate temperature of the substrate for temperature estimation.

公开(公告)号：US20060126701A1

公开(公告)日：2006-06-15

申请号：US10691500

申请日：2003-10-24

申请人： Katsuya Nozawa ,  Tohru Saitoh ,  Teruhito Ohnishi

发明人： Katsuya Nozawa ,  Tohru Saitoh ,  Teruhito Ohnishi

IPC分类号： G01K13/00

CPC分类号： G01K11/02 ,  Y10S438/933

摘要： A method of estimating substrate temperature according to this invention includes the steps of epitaxially growing a Si-containing layer (103) on a SiGe layer (102) formed on a substrate for temperature estimation (101) constituted of a Si substrate under a reaction control condition; finding a relationship between a rate of growth of the Si-containing layer and a substrate temperature of the substrate for temperature estimation; epitaxially growing a Si-containing layer on a substrate for device fabrication as a subject of substrate temperature estimation under a reaction control condition; and estimating a substrate temperature of the substrate for device fabrication based on the rate of growth of the latter Si-containing layer and the relationship between the rate of growth of the former Si-containing layer (103) and the substrate temperature of the substrate for temperature estimation.

摘要翻译： 根据本发明的估计衬底温度的方法包括以下步骤：在反应控制下由Si衬底构成的用于温度估计的衬底上形成的SiGe层（102）上外延生长含Si层（103） 条件; 发现含Si层的生长速率与用于温度估计的衬底的衬底温度之间的关系; 在用于器件制造的衬底上外延生长含Si层，作为在反应控制条件下的衬底温度估计的对象; 以及基于后面的含Si层的生长速率和前述含Si层（103）的生长速度与衬底的衬底温度之间的关系，估计用于器件制造的衬底的衬底温度 温度估计。

公开(公告)号：US06919253B2

公开(公告)日：2005-07-19

申请号：US10359553

申请日：2003-02-07

申请人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

发明人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.

摘要翻译： 根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上 通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延 生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。

公开(公告)号：US20050066887A1

公开(公告)日：2005-03-31

申请号：US10359553

申请日：2003-02-07

申请人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

发明人： Tohru Saitoh ,  Katsuya Nozawa ,  Minoru Kubo ,  Shigetaka Aoki

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/331 ,  H01L29/739 ,  H01L31/0336

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.

摘要翻译： 根据本发明的制造半导体器件的方法包括步骤A，其在衬底的表面上形成多晶或无定形初级半导体层以具有开口部分和在同时形成外延生长层的步骤B上 通过开口部分的衬底的暴露部分和初步半导体层上的非外延生长层，使用CVD方法，同时通过反应室内的热源在反应室内加热衬底，外延 生长层由单晶半导体制成，非外延生长层由多晶或非晶半导体层组成。

公开(公告)号：US08258038B2

公开(公告)日：2012-09-04

申请号：US13076526

申请日：2011-03-31

申请人： Katsuya Nozawa

发明人： Katsuya Nozawa

IPC分类号： H01L21/02 ,  H01L21/20

CPC分类号： H01L27/101 ,  H01L27/222 ,  H01L27/249 ,  H01L43/12 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/16

摘要： The method of manufacturing a semiconductor memory includes a process of forming a projection by performing an insulator forming process on the exposed side surface of a reactive conductive material and a non-reactive conductive material that are stacked above a substrate so as to change a predetermined length of the side surface of the reactive conductive material into an insulator, and thereby causing the side surface of the non-reactive conductive material to project outward from the side surface of the reactive its conductive material. The insulator forming process is an oxidation process or a nitridation process, the reactive conductive material is a material that reacts chemically and changes into the insulator in the oxidation process or nitridation process, and the non-reactive conductive material is a material that does not change into the insulator in the oxidation process or nitridation process.

摘要翻译： 制造半导体存储器的方法包括通过在反应性导电材料和非反应性导电材料的暴露侧表面上执行绝缘体形成工艺来形成突起的工艺，所述反应性导电材料和非反应性导电材料堆叠在基板上方以改变预定长度 的反应性导电材料的侧表面形成绝缘体，从而使非反应性导电材料的侧表面从反应性导电材料的侧表面向外突出。 绝缘子形成工艺是氧化工艺或氮化工艺，反应性导电材料是在氧化过程或氮化过程中化学反应并变成绝缘体的材料，非反应性导电材料是不改变的材料 在氧化过程或氮化过程中进入绝缘体。