公开(公告)号：US20060103020A1

公开(公告)日：2006-05-18

申请号：US11163815

申请日：2005-10-31

申请人： Ho-Ming Tong ,  Shin-Hua Chao ,  Chi-Yu Wang ,  Cherry Mercado Reyes

发明人： Ho-Ming Tong ,  Shin-Hua Chao ,  Chi-Yu Wang ,  Cherry Mercado Reyes

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00014

摘要： A circuit structure of a redistribution layer (RDL) is suitable for a chip to define the circuits and the contact window required by the following bump process. The RDL is disposed on the active surface of the chip. The circuit structure of the RDL mainly includes a first titanium layer, a second titanium layer and a conductive layer. Wherein, the conductive layer is made of aluminum; the first titanium layer and the second titanium layer cover the two surfaces of the conductive layer, respectively. The connectivity between the first titanium layer or the second titanium layer and a macromolecule polymer is stronger than the connectivity between the conductive layer and the macromolecule polymer, so that the peeling or crack caused by poor connectivity between the conductive layer and the adjacent dielectric layers are significantly improved thereby.

摘要翻译： 再分配层（RDL）的电路结构适用于芯片来定义随后的凸块工艺所需的电路和接触窗口。 RDL设置在芯片的有源表面上。 RDL的电路结构主要包括第一钛层，第二钛层和导电层。 其中，导电层由铝制成; 第一钛层和第二钛层分别覆盖导电层的两个表面。 第一钛层或第二钛层与高分子聚合物之间的连接性比导电层和高分子聚合物之间的连通性更强，导致导电层和相邻电介质层之间连接性差的剥离或裂纹是 从而显着改善。