公开(公告)号：US20120258255A1

公开(公告)日：2012-10-11

申请号：US13081042

申请日：2011-04-06

申请人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

发明人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC分类号： C23C14/00

CPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

摘要： The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

摘要翻译： 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US08906207B2

公开(公告)日：2014-12-09

申请号：US13081042

申请日：2011-04-06

申请人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

发明人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC分类号： C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

摘要： The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

摘要翻译： 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US08728879B2

公开(公告)日：2014-05-20

申请号：US13547856

申请日：2012-07-12

申请人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

发明人： Bob Kong ,  Tony Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

IPC分类号： H01L21/20

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

公开(公告)号：US20130140511A1

公开(公告)日：2013-06-06

申请号：US13624374

申请日：2012-09-21

申请人： Tony Chiang ,  Chi-I Lang ,  Prashant Phatak

发明人： Tony Chiang ,  Chi-I Lang ,  Prashant Phatak

IPC分类号： H01L45/00

CPC分类号： H01L45/1608 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/148 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1641

摘要： A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

摘要翻译： 描述电阻式切换存储元件。 所述存储元件包括第一电极，所述第一电极上的多孔层，包括嵌入所述多孔层的多个孔中的点缺陷，以及位于所述多孔层上的第二电极，其中所述非易失性存储元件构造成在 高电阻状态和低电阻状态。

公开(公告)号：US07678607B2

公开(公告)日：2010-03-16

申请号：US11702725

申请日：2007-02-05

申请人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

发明人： Tony Chiang ,  Chi-I Lang ,  Zhi-wen Sun ,  Jinhong Tong ,  Nitin Kumar

IPC分类号： H01L21/00

CPC分类号： H01L45/04 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

公开(公告)号：US07658790B1

公开(公告)日：2010-02-09

申请号：US11773316

申请日：2007-07-03

申请人： Alexander Gorer ,  Tony Chiang ,  Chi-I Lang

发明人： Alexander Gorer ,  Tony Chiang ,  Chi-I Lang

IPC分类号： C23C18/34

CPC分类号： C23C18/34 ,  C23C18/50

摘要： An electroless solution for deposition of a cobalt-based alloy on a substrate is provided. The electroless solution may be formed by mixing first and second solutions, with the first and second solutions being prepared from concentrated precursors. In one embodiment, the first solution contains a cobalt (Co) ion source and a complexing and deposition selectivity agent. In one embodiment, the cobalt concentration in the first solution is at least 90 millimoles per liter. The second solution contains a reducing agent. In one embodiment, the reducing agent is dimethylamineborane (DMAB) having a concentration of at least 10 grams per liter. In other embodiments, the first solution also contains a tungsten (W) ion source, and either the first or second solution also contains a phosphorous (P) ion source.

摘要翻译： 提供了一种用于在基底上沉积钴基合金的无电溶液。 化学溶液可以通过混合第一和第二溶液形成，第一和第二溶液由浓缩的前体制备。 在一个实施方案中，第一溶液含有钴（Co）离子源和络合和沉积选择剂。 在一个实施方案中，第一溶液中的钴浓度为至少90毫摩尔/升。 第二种溶液含有还原剂。 在一个实施方案中，还原剂是浓度为至少10克/升的二甲胺硼烷（DMAB）。 在其它实施方案中，第一溶液还含有钨（W）离子源，并且第一或第二溶液也含有磷（P）离子源。

公开(公告)号：US20090075095A1

公开(公告)日：2009-03-19

申请号：US12208865

申请日：2008-09-11

申请人： Igor Ivanov ,  Tony Chiang ,  Chi-I Lang

发明人： Igor Ivanov ,  Tony Chiang ,  Chi-I Lang

IPC分类号： B32B27/30 ,  B32B9/00 ,  B44C1/22 ,  B05D1/18 ,  C25D5/02

CPC分类号： C25D5/028 ,  C25D5/34 ,  C25D7/12 ,  H01L21/6835 ,  Y10T428/31855

摘要： Methods for processing a substrate utilizing a backside layer are presented including: receiving a substrate, the substrate including a front side and a backside; forming the backside layer on the backside of the substrate; and performing at least one processing operation on the front side of the substrate, wherein the backside layer protects the backside of the substrate during the performing the at least one processing operation. In some embodiments, methods further include cross-linking the backside layer such that the backside layer is stabilized. In some embodiments, methods further include: functionalizing the backside layer, where the functionalizing alters a chemical characteristic of the backside layer, and where the functionalizing includes a functional group such as: a hydroxyl group, an amino group, a mercapto group, a fluorine group, a chlorine group, an alkene group, an aryle group, and a carboxy group.

摘要翻译： 提供了利用背面层处理衬底的方法，包括：接收衬底，所述衬底包括正面和背面; 在衬底的背面形成背面层; 以及在所述基板的前侧执行至少一个处理操作，其中所述背面层在执行所述至少一个处理操作期间保护所述基板的背面。 在一些实施方案中，方法还包括交联背面层，使得背侧层是稳定的。 在一些实施方案中，方法还包括：功能化背面层，其中官能化改变背面层的化学特性，并且官能化包括官能团如羟基，氨基，巯基，氟 基团，氯基团，烯烃基团，芳基基团和羧基基团。

公开(公告)号：US20080220601A1

公开(公告)日：2008-09-11

申请号：US11714334

申请日：2007-03-05

申请人： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

发明人： Nitin Kumar ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang ,  Prashant B. Phatak

IPC分类号： H01L21/20 ,  H01L21/4763

CPC分类号： H01L45/04 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

摘要翻译： 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US08609475B2

公开(公告)日：2013-12-17

申请号：US13602637

申请日：2012-09-04

申请人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

发明人： Zhi-Wen Sun ,  Tony Chiang ,  Chi-I Lang ,  Jinhong Tong

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material.

摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法。

公开(公告)号：US08143164B2

公开(公告)日：2012-03-27

申请号：US12368110

申请日：2009-02-09

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。