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    Semiconductor device with improved breakdown voltage
    3.
    发明授权
    Semiconductor device with improved breakdown voltage 有权
    具有提高击穿电压的半导体器件

    公开(公告)号：US09385229B2

    公开(公告)日：2016-07-05

    申请号：US14495508

    申请日：2014-09-24

    申请人： Hongning Yang ,  Xin Lin ,  Zhihong Zhang ,  Jiang-Kai Zuo

    发明人： Hongning Yang ,  Xin Lin ,  Zhihong Zhang ,  Jiang-Kai Zuo

    IPC分类号： H01L29/78 ,  H01L29/66

    CPC分类号： H01L29/7824 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/4175 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835 ,  H01L29/78624

    摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a first region of semiconductor material having a first conductivity type and a first dopant concentration, a second region of semiconductor material having a second conductivity type overlying the first region, a drift region of semiconductor material having the first conductivity type overlying the second region, and a drain region of semiconductor material having the first conductivity type. The drift region and the drain region are electrically connected, with at least a portion of the drift region residing between the drain region and the second region, and at least a portion of the second region residing between that drift region and the first region. In one or more exemplary embodiments, the first region abuts an underlying insulating layer of dielectric material.

    摘要翻译： 提供半导体器件结构和相关的制造方法。 示例性的半导体器件结构包括具有第一导电类型和第一掺杂剂浓度的第一半导体材料区域，具有覆盖第一区域的第二导电类型的第二半导体材料区域，具有第一导电类型的半导体材料的漂移区域 覆盖第二区域，以及具有第一导电类型的半导体材料的漏极区域。 漂移区域和漏极区域电连接，漂移区域的至少一部分位于漏极区域和第二区域之间，并且第二区域的至少一部分位于该漂移区域和第一区域之间。 在一个或多个示例性实施例中，第一区域邻接介电材料的下层绝缘层。

    Semiconductor devices and related fabrication methods
    6.
    发明授权
    Semiconductor devices and related fabrication methods 有权
    半导体器件及相关制造方法

    公开(公告)号：US09306060B1

    公开(公告)日：2016-04-05

    申请号：US14548616

    申请日：2014-11-20

    申请人： Hongning Yang ,  Daniel J. Blomberg ,  Xin Lin ,  Zhihong Zhang ,  Jiang-Kai Zuo

    发明人： Hongning Yang ,  Daniel J. Blomberg ,  Xin Lin ,  Zhihong Zhang ,  Jiang-Kai Zuo

    IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

    CPC分类号： H01L29/7823 ,  H01L21/26513 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/66689 ,  H01L29/7835 ,  H01L29/78624

    摘要： Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body region of semiconductor material having a first conductivity type, a source region of semiconductor material having a second conductivity type within the body region, a junction isolation region of semiconductor material having the second conductivity type, a drain region of semiconductor material having the second conductivity type, and first and second drift regions of semiconductor material having the second conductivity type. The first drift region resides laterally between the drain region and the junction isolation region, the junction isolation region resides laterally between the first drift region and the second drift region, and the second drift region resides laterally between the body region and the junction isolation region.

    摘要翻译： 提供半导体器件结构和相关的制造方法。 示例性的半导体器件结构包括具有第一导电类型的半导体材料的主体区域，在体区内具有第二导电类型的半导体材料的源极区域，具有第二导电类型的半导体材料的结隔离区域，漏极区域 具有第二导电类型的半导体材料以及具有第二导电类型的半导体材料的第一和第二漂移区。 第一漂移区域横向地位于漏极区域和结隔离区域之间，结隔离区域横向位于第一漂移区域和第二漂移区域之间，并且第二漂移区域横向居住在体区域和结隔离区域之间。

    Semiconductor Device with Drain-End Drift Diminution
    8.
    发明申请
    Semiconductor Device with Drain-End Drift Diminution 有权
    具有排水端漂移的半导体器件

    公开(公告)号：US20130292764A1

    公开(公告)日：2013-11-07

    申请号：US13465761

    申请日：2012-05-07

    申请人： Hongning Yang ,  Daniel J. Blomberg ,  Xu Cheng ,  Xin Lin ,  Won Gi Min ,  Zhihong Zhang ,  Jiang-Kai Zuo

    发明人： Hongning Yang ,  Daniel J. Blomberg ,  Xu Cheng ,  Xin Lin ,  Won Gi Min ,  Zhihong Zhang ,  Jiang-Kai Zuo

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/063 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

    摘要： A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region in the semiconductor substrate between the source and drain regions through which charge carriers flow during operation from the source region to the drain region, and a drift region in the semiconductor substrate, on which the drain region is disposed, and through which the charge carriers drift under an electric field arising from application of a bias voltage between the source and drain regions. A PN junction along the drift region includes a first section at the drain region and a second section not at the drain region. The drift region has a lateral profile that varies such that the first section of the PN junction is shallower than the second section of the PN junction.

    摘要翻译： 一种器件包括半导体衬底，半导体衬底中的源极和漏极区域，在源极和漏极区域之间的半导体衬底中的沟道区域，电荷载体在从源极区域到漏极区域的工作期间流过该沟道区域，以及漂移区域 其上设置有漏极区的半导体衬底，并且电荷载流子在源极和漏极区域之间施加偏压产生的电场下漂移。 沿着漂移区域的PN结包括在漏极区域处的第一部分和不在漏极区域的第二部分。 漂移区域具有变化的横向轮廓，使得PN结的第一部分比PN结的第二部分浅。