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    BIT PATTERNED MEDIUM
    1.
    发明申请
    BIT PATTERNED MEDIUM 有权
    位图形图

    公开(公告)号：US20090059429A1

    公开(公告)日：2009-03-05

    申请号：US12127390

    申请日：2008-05-27

    申请人： Hoo-san Lee ,  Sung-Chul Lee ,  Hoon-Sang Oh

    发明人： Hoo-san Lee ,  Sung-Chul Lee ,  Hoon-Sang Oh

    IPC分类号： G11B5/82

    CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

    摘要： Provided is a bit patterned medium including bridges which induce exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The bridges and the bits are integrally formed with each other. The bits are locally connected by the bridges. A magnetostatic force for each bit is reduced due to an exchange coupling between adjacent bits, thereby reducing a switching field distribution of the bits.

    摘要翻译： 提供了包括桥的位图案化介质，其引起相邻位之间的交换耦合，以便减少由位的不同磁化方向引起的开关场差。 桥和钻头彼此一体形成。 这些位由桥接器本地连接。 由于相邻位之间的交换耦合，每个位的静磁力减小，从而减小位的开关场分布。

    Optical sensor and semiconductor device
    3.
    发明申请
    Optical sensor and semiconductor device 审中-公开
    光学传感器和半导体器件

    公开(公告)号：US20110013055A1

    公开(公告)日：2011-01-20

    申请号：US12801938

    申请日：2010-07-02

    申请人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

    发明人： Sang-Chul Sul ,  Myung-Bok Lee ,  Hoon-Sang Oh ,  Young-Gu Jin

    IPC分类号： H04N5/335

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14632

    摘要： Example embodiments are directed to a semiconductor device including a color pixel array on a substrate; a distance pixel array on the substrate; a light-inducing member on the color pixel array and the distance pixel array; an infrared light cut filter on the light-inducing member and configured to block infrared light; a near infrared light filter on the light-inducing member and configured to allow near infrared light to pass; and an RGB filter on the light-inducing member and configured to allow visible light to pass. According to example embodiments, a method of manufacturing a semiconductor device may include forming a color pixel array on a substrate; forming a distance pixel array on the substrate; forming a light-inducing member on the color pixel array and the distance pixel array; forming an infrared light cut filter on the light-inducing member; forming a near infrared light filter on the light-inducing member; forming a RGB filter on the light-inducing member; and forming a plurality of lenses on the infrared light cut filter and the near infrared light filter.

    摘要翻译： 示例性实施例涉及在衬底上包括彩色像素阵列的半导体器件; 衬底上的距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上的导光构件; 在所述导光部件上的红外光截止滤光器，被配置为阻挡红外光; 在所述导光部件上的近红外光滤光器，其被配置为允许近红外光通过; 以及在所述光诱导构件上的RGB滤光器，并且被配置为允许可见光通过。 根据示例性实施例，制造半导体器件的方法可以包括在衬底上形成彩色像素阵列; 在基板上形成距离像素阵列; 在所述彩色像素阵列和所述距离像素阵列上形成导光部件; 在所述感光构件上形成红外光截止滤光器; 在所述导光部件上形成近红外光滤波器; 在所述感光构件上形成RGB滤光器; 并且在红外线截止滤光器和近红外光滤光器上形成多个透镜。

    Unit pixel of CMOS image sensor with capacitor coupled photodiode
    4.
    发明授权
    Unit pixel of CMOS image sensor with capacitor coupled photodiode 有权
    具有电容耦合光电二极管的CMOS图像传感器的单位像素

    公开(公告)号：US06441412B2

    公开(公告)日：2002-08-27

    申请号：US09742168

    申请日：2000-12-19

    申请人： Hoon-Sang Oh ,  Jin-Su Han

    发明人： Hoon-Sang Oh ,  Jin-Su Han

    IPC分类号： H01L31062

    CPC分类号： H01L27/14601

    摘要： A unit pixel in a CMOS image sensor, which enhances a capacitance of a photodiode to reduce noises and increase the maximum output signal of the image sensor, is provided. To achieve this, the CMOS image sensor includes a photodiode aligned with an edge of an insulating film for separating elements and formed by doping impurities to a semiconductor layer by an ion implantation; and a capacitor formed along with interface between the photodiode and the insulating film on plan and formed by layering a bottom electrode, a dielectric and an upper electrode contacted with the photodiode.

    摘要翻译： 提供CMOS图像传感器中的单位像素，其增强了光电二极管的电容以降低噪声并增加图像传感器的最大输出信号。 为了实现这一点，CMOS图像传感器包括与用于分离元件的绝缘膜的边缘对准的光电二极管，并且通过离子注入将杂质掺杂到半导体层而形成; 以及在平面上与光电二极管和绝缘膜之间的界面一起形成的电容器，并且通过分层与光电二极管接触的底部电极，电介质和上电极而形成。

    Method for manufacturing a CMOS image sensor having a capacitor's top electrode in contact with a photo-sensing element
    6.
    发明授权
    Method for manufacturing a CMOS image sensor having a capacitor's top electrode in contact with a photo-sensing element 有权
    一种用于制造CMOS图像传感器的方法，其具有与光敏元件接触的电容器的顶部电极

    公开(公告)号：US06855595B2

    公开(公告)日：2005-02-15

    申请号：US10326680

    申请日：2002-12-20

    申请人： Jin-Su Han ,  Hoon-Sang Oh

    发明人： Jin-Su Han ,  Hoon-Sang Oh

    IPC分类号： H01L21/8234 ,  H01L27/06 ,  H01L27/146 ,  H01L31/10 ,  H01L21/8242

    CPC分类号： H01L27/14689 ,  H01L27/14601

    摘要： An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.

    摘要翻译： 图像传感器包括用于感测光束以生成图像数据的多个单位像素。 每个单位像素包括用于感测入射到其上的光束并产生光电电荷的光电元件，包括与光电元件相邻形成的栅极电介质的晶体管和形成在栅极电介质的顶部上的栅极电极和包括 形成在所述光电元件的一部分上的绝缘膜和底电极，其中所述绝缘膜和所述栅极电介质由相同的材料制成，并且所述底电极和所述栅电极由相同的材料制成。

    Image sensor incorporating therein a capacitor structure and method for the manufacture thereof
    7.
    发明授权
    Image sensor incorporating therein a capacitor structure and method for the manufacture thereof 失效

    公开(公告)号：US06521924B2

    公开(公告)日：2003-02-18

    申请号：US09742817

    申请日：2000-12-19

    申请人： Jin-Su Han ,  Hoon-Sang Oh

    发明人： Jin-Su Han ,  Hoon-Sang Oh

    IPC分类号： H01L31062

    CPC分类号： H01L27/14689 ,  H01L27/14601

    摘要： An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.