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公开(公告)号：US08331027B2
公开(公告)日：2012-12-11
申请号：US12510900
申请日：2009-07-28
申请人： Howard A. Padmore , Dmytro L. Voronov , Rossana Cambie , Valeriy V. Yashchuk , Eric M. Gullikson
发明人： Howard A. Padmore , Dmytro L. Voronov , Rossana Cambie , Valeriy V. Yashchuk , Eric M. Gullikson
CPC分类号： G02B5/1838 , B29D11/0073 , B29D11/00769 , B82Y10/00 , G01J3/1809 , G21K1/06 , G21K1/062 , G21K2201/061 , G21K2201/067
摘要： A diffraction grating structure having ultra-high density of grooves comprises an echellette substrate having periodically repeating recessed features, and a multi-layer stack of materials disposed on the echellette substrate. The surface of the diffraction grating is planarized, such that layers of the multi-layer stack form a plurality of lines disposed on the planarized surface of the structure in a periodical fashion, wherein lines having a first property alternate with lines having a dissimilar property on the surface of the substrate. For example, in one embodiment, lines comprising high-Z and low-Z materials alternate on the planarized surface providing a structure that is suitable as a diffraction grating for EUV and soft X-rays. In some embodiments, line density of between about 10,000 lines/mm to about 100,000 lines/mm is provided.
摘要翻译： 具有超高密度凹槽的衍射光栅结构包括具有周期性重复的凹陷特征的薄片基片和设置在薄片基片上的多层材料堆叠。 衍射光栅的表面被平坦化，使得多层叠层的层以周期的方式形成布置在结构的平坦化表面上的多条线，其中具有第一属性的线与具有不同性质的线交替 衬底的表面。 例如，在一个实施例中，包括高Z和低Z材料的线在平坦化表面上交替，提供适合作为EUV和软X射线的衍射光栅的结构。 在一些实施例中，提供约10,000线/ mm至约100,000线/ mm之间的线密度。
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公开(公告)号：US20100053611A1
公开(公告)日：2010-03-04
申请号：US12510900
申请日：2009-07-28
申请人： Howard A. Padmore , Dmytro L. Voronov , Rossana Cambie , Valeriy V. Yashchuk , Eric M. Gullikson
发明人： Howard A. Padmore , Dmytro L. Voronov , Rossana Cambie , Valeriy V. Yashchuk , Eric M. Gullikson
CPC分类号： G02B5/1838 , B29D11/0073 , B29D11/00769 , B82Y10/00 , G01J3/1809 , G21K1/06 , G21K1/062 , G21K2201/061 , G21K2201/067
摘要： A diffraction grating structure having ultra-high density of grooves comprises an echellette substrate having periodically repeating recessed features, and a multi-layer stack of materials disposed on the echellette substrate. The surface of the diffraction grating is planarized, such that layers of the multi-layer stack form a plurality of lines disposed on the planarized surface of the structure in a periodical fashion, wherein lines having a first property alternate with lines having a dissimilar property on the surface of the substrate. For example, in one embodiment, lines comprising high-Z and low-Z materials alternate on the planarized surface providing a structure that is suitable as a diffraction grating for EUV and soft X-rays. In some embodiments, line density of between about 10,000 lines/mm to about 100,000 lines/mm is provided.
摘要翻译： 具有超高密度凹槽的衍射光栅结构包括具有周期性重复的凹陷特征的薄片基片和设置在薄片基片上的多层材料堆叠。 衍射光栅的表面被平坦化，使得多层叠层的层以周期的方式形成布置在结构的平坦化表面上的多条线，其中具有第一属性的线与具有不同性质的线交替 衬底的表面。 例如，在一个实施例中，包括高Z和低Z材料的线在平坦化表面上交替，提供适合作为EUV和软X射线的衍射光栅的结构。 在一些实施例中，提供约10,000线/ mm至约100,000线/ mm之间的线密度。
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公开(公告)号：US06815363B2
公开(公告)日：2004-11-09
申请号：US09927428
申请日：2001-08-09
IPC分类号： H01L21302
CPC分类号： B81C1/00619 , B81C1/00595 , B81C2201/0143
摘要： A nanomachining method for producing high-aspect ratio precise nanostructures. The method begins by irradiating a wafer with an energetic charged-particle beam. Next, a layer of patterning material is deposited on one side of the wafer and a layer of etch stop or metal plating base is coated on the other side of the wafer. A desired pattern is generated in the patterning material on the top surface of the irradiated wafer using conventional electron-beam lithography techniques. Lastly, the wafer is placed in an appropriate chemical solution that produces a directional etch of the wafer only in the area from which the resist has been removed by the patterning process. The high mechanical strength of the wafer materials compared to the organic resists used in conventional lithography techniques with allows the transfer of the precise patterns into structures with aspect ratios much larger than those previously achievable.
摘要翻译： 用于生产高纵横比精确纳米结构的纳米加工方法。 该方法通过用能量带电粒子束照射晶片开始。 接下来，在晶片的一侧上沉积图案材料层，并且在晶片的另一侧上涂覆有一层蚀刻停止层或金属电镀底座。 使用常规电子束光刻技术在照射晶片的顶表面上的图形材料中产生期望的图案。 最后，将晶片放置在合适的化学溶液中，仅在通过图案化工艺除去抗蚀剂的区域中产生晶片的定向蚀刻。 与常规光刻技术中使用的有机抗蚀剂相比，晶片材料的高机械强度允许将精确图案转移到具有比先前可实现的更高的纵横比的结构。
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