公开(公告)号：US08331027B2

公开(公告)日：2012-12-11

申请号：US12510900

申请日：2009-07-28

申请人： Howard A. Padmore ,  Dmytro L. Voronov ,  Rossana Cambie ,  Valeriy V. Yashchuk ,  Eric M. Gullikson

发明人： Howard A. Padmore ,  Dmytro L. Voronov ,  Rossana Cambie ,  Valeriy V. Yashchuk ,  Eric M. Gullikson

IPC分类号： G02B5/18 ,  G01J3/28

CPC分类号： G02B5/1838 ,  B29D11/0073 ,  B29D11/00769 ,  B82Y10/00 ,  G01J3/1809 ,  G21K1/06 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： A diffraction grating structure having ultra-high density of grooves comprises an echellette substrate having periodically repeating recessed features, and a multi-layer stack of materials disposed on the echellette substrate. The surface of the diffraction grating is planarized, such that layers of the multi-layer stack form a plurality of lines disposed on the planarized surface of the structure in a periodical fashion, wherein lines having a first property alternate with lines having a dissimilar property on the surface of the substrate. For example, in one embodiment, lines comprising high-Z and low-Z materials alternate on the planarized surface providing a structure that is suitable as a diffraction grating for EUV and soft X-rays. In some embodiments, line density of between about 10,000 lines/mm to about 100,000 lines/mm is provided.

摘要翻译： 具有超高密度凹槽的衍射光栅结构包括具有周期性重复的凹陷特征的薄片基片和设置在薄片基片上的多层材料堆叠。 衍射光栅的表面被平坦化，使得多层叠层的层以周期的方式形成布置在结构的平坦化表面上的多条线，其中具有第一属性的线与具有不同性质的线交替 衬底的表面。 例如，在一个实施例中，包括高Z和低Z材料的线在平坦化表面上交替，提供适合作为EUV和软X射线的衍射光栅的结构。 在一些实施例中，提供约10,000线/ mm至约100,000线/ mm之间的线密度。

公开(公告)号：US20100053611A1

公开(公告)日：2010-03-04

申请号：US12510900

申请日：2009-07-28

申请人： Howard A. Padmore ,  Dmytro L. Voronov ,  Rossana Cambie ,  Valeriy V. Yashchuk ,  Eric M. Gullikson

发明人： Howard A. Padmore ,  Dmytro L. Voronov ,  Rossana Cambie ,  Valeriy V. Yashchuk ,  Eric M. Gullikson

IPC分类号： G01J3/18 ,  B29D11/00 ,  C23C14/00 ,  C23C14/34 ,  B05D5/06 ,  C23C14/35 ,  G02B5/18

CPC分类号： G02B5/1838 ,  B29D11/0073 ,  B29D11/00769 ,  B82Y10/00 ,  G01J3/1809 ,  G21K1/06 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： A diffraction grating structure having ultra-high density of grooves comprises an echellette substrate having periodically repeating recessed features, and a multi-layer stack of materials disposed on the echellette substrate. The surface of the diffraction grating is planarized, such that layers of the multi-layer stack form a plurality of lines disposed on the planarized surface of the structure in a periodical fashion, wherein lines having a first property alternate with lines having a dissimilar property on the surface of the substrate. For example, in one embodiment, lines comprising high-Z and low-Z materials alternate on the planarized surface providing a structure that is suitable as a diffraction grating for EUV and soft X-rays. In some embodiments, line density of between about 10,000 lines/mm to about 100,000 lines/mm is provided.

摘要翻译： 具有超高密度凹槽的衍射光栅结构包括具有周期性重复的凹陷特征的薄片基片和设置在薄片基片上的多层材料堆叠。 衍射光栅的表面被平坦化，使得多层叠层的层以周期的方式形成布置在结构的平坦化表面上的多条线，其中具有第一属性的线与具有不同性质的线交替 衬底的表面。 例如，在一个实施例中，包括高Z和低Z材料的线在平坦化表面上交替，提供适合作为EUV和软X射线的衍射光栅的结构。 在一些实施例中，提供约10,000线/ mm至约100,000线/ mm之间的线密度。

公开(公告)号：US06815129B1

公开(公告)日：2004-11-09

申请号：US09669958

申请日：2000-09-26

申请人： John E. Bjorkholm ,  Daniel G. Stearns ,  Eric M. Gullikson ,  Daniel A. Tichenor ,  Scott D. Hector

发明人： John E. Bjorkholm ,  Daniel G. Stearns ,  Eric M. Gullikson ,  Daniel A. Tichenor ,  Scott D. Hector

IPC分类号： G03F900

CPC分类号： G03F7/705 ,  G03F7/70433 ,  G03F7/70941

摘要： A method for compensating for flare-induced critical dimensions (CD) changes in photolithography. Changes in the flare level results in undesirable CD changes. The method when used in extreme ultraviolet (EUV) lithography essentially eliminates the unwanted CD changes. The method is based on the recognition that the intrinsic level of flare for an EUV camera (the flare level for an isolated sub-resolution opaque dot in a bright field mask) is essentially constant over the image field. The method involves calculating the flare and its variation over the area of a patterned mask that will be imaged and then using mask biasing to largely eliminate the CD variations that the flare and its variations would otherwise cause. This method would be difficult to apply to optical or DUV lithography since the intrinsic flare for those lithographies is not constant over the image field.

摘要翻译： 用于补偿光刻中闪耀引起的临界尺寸（CD）变化的方法。 闪光水平的变化导致不良CD变化。 当用于极紫外（EUV）光刻技术时，该方法基本上消除了不必要的CD变化。 该方法基于这样的认识：对于EUV摄像机（对于明场掩模中的隔离的子分辨率不透明点的闪光级别）的本征水平在图像场上基本上是恒定的。 该方法包括计算闪耀及其在将被成像的图案化掩模的面积上的变化，然后使用掩模偏置来大大消除闪光及其变化否则将导致的CD变化。 这种方法将难以应用于光学或DUV光刻，因为用于这些平版印刷的本征闪光在图像场上不是恒定的。