摘要:
In signal detection apparatus for sensing large excursion of a time varying signal from its average value, charge transfer circuits are utilized to provide a threshold level for detection which adapts to the changing average value of the background component of the time varying signal.
摘要:
A charge transfer device is described for the conversion of a sequence of samples of a signal occurring at high frequency into simultaneous data samples occurring at a substantially lower frequency and substantially longer duration.
摘要:
A conductor-insulator-semiconductor (CIS) structure for a random access surface charge memory system is disclosed. The memory system comprises an array of memory cells including charge storage regions, charge transfer regions and charge receive-source regions formed along the surface-adjacent portions of a semiconductor substrate. A charge-storage line insulatingly overlies the storage regions of a row of memory cells and a bit line, comprising an extended region of opposite-conductivity-type, interconnects the receive-source regions of the same memory cells. Addressing in the Y-direction (word selection) is provided by charge transfer lines insulatingly overlying the charge transfer regions of a column of memory cells. Selected memory cells are addressed for read and write purposes by first activating the word select line which makes available one cell in each row of the memory. The desired row is then selected by means external to the array of memory cells. All cells of the selected word line are refreshed, but only one cell is addressed for read and write purposes. Means for reading, writing and refreshing data in the memory system are also disclosed.
摘要:
A charge transfer filter includes an accumulator charge storage location and means for alternately introducing charge into the accumulator charge storage location and then for removing a preselected fraction of the total charge in the accumulator charge storage location so that the total accumulated charge is known.
摘要:
In a charge transfer transversal filter a semiconductor substrate is provided with main and parallel portions. A group of serially arranged electrodes insulatingly overlie and are uniformly spaced from the channel portions. The electrodes form with the substrate a plurality of stages of first and second charge transfer shift register over the main and parallel channel portions of the substrate, respectively. One electrode of each of the stages of the shift registers has a split along the length dimension thereof over the main channel portion dividing each of the one electrodes over the main channel portion into a first part and a second part with a third part overlying the parallel channel portion. The first parts of the one electrodes are connected to a first conductive line and the second and third parts of the one electrodes are connected to a second conductive line. The area of the first parts of the one electrodes being equal to the sum of the areas of the second and third parts of the one electrode.
摘要:
A plurality of charge storage cells, each including first and second storage regions and corresponding first and second electrodes insulatingly overlying the storage regions are provided in a semiconductor substrate. Means are provided for introducing into each of the first charge storage regions a respective quantity of charge proportional to a respective sample of an analog signal. Means are provided for developing a plurality of voltage waveforms, each of the waveforms including a series of periods, and each period constituted of first and second subperiods. Means are provided for applying each of the voltage waveforms to a respective one of the second electrodes of the cells. A high absolute level of a waveform applied to a second electrode of a cell causing charge in the first storage region thereof to transfer to the second storage region thereof and a low absolute level of the waveform applied to a second electrode of a cell causing charge in the second storage region thereof to transfer to the first storage region thereof. Each of the waveforms has a low absolute level during a first subperiod and an absolute level which is either high or low during a second subperiod in response to a respective reference signal, whereby charge in each cell is transferred between the first and second charge storage regions thereof in a time sequence determined by a respective reference signal. Means are provided connected in circuit with the first storage electrodes for sensing the total net charge transferred to and from the first charge storage regions during a common period of the voltage waveforms.
摘要:
A charge transfer shift register is described in which a first section is operated at a first clock frequency, a second section is operated at a second clock frequency, and an intermediate section located between the first and second sections is operated at fixed potential.
摘要:
The output circuit includes a high gain differential amplifier having an inverting input terminal, a non-inverting input terminal and an output terminal with a feedback capacitance connected between the output terminal and the inverting input terminal. The input terminals are connected to first and second commonly phased lines of the charge transfer transversal filter. First and second charging and isolating means are connected between a source of operating voltage and the first and second commonly phased lines, respectively. The lines are charged periodically to the voltage of the source by the first and second charging and isolating means prior to the transfer of charge in a cycle of operation of the filter and are then isolated from the source during the transfer of charge in the filter by the first and second charging and isolating means.