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公开(公告)号:US20120104578A1
公开(公告)日:2012-05-03
申请号:US13342583
申请日:2012-01-03
申请人: Hsien-Pin Hu , Chen-Hu Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hu Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L23/495
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
摘要翻译: 一种方法包括提供包括衬底的中介层晶片,以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔(TSV)。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后,在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。