公开(公告)号：US08710359B2

公开(公告)日：2014-04-29

申请号：US12637768

申请日：2009-12-15

申请人： Hsing-Hua Wu ,  Chian-Fu Huang ,  Wei-Yuan Cheng ,  Jyh-Wen Shiu

发明人： Hsing-Hua Wu ,  Chian-Fu Huang ,  Wei-Yuan Cheng ,  Jyh-Wen Shiu

IPC分类号： H01L31/00

CPC分类号： H01L31/075 ,  G02F2001/13324 ,  G09G3/20 ,  G09G2330/00 ,  G09G2380/14 ,  H01L31/02167 ,  Y02E10/548

摘要： A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

摘要翻译： 提供一种显示模块，其包括第一和第二基板，透明型太阳能电池，显示装置，电力存储装置，驱动电路和电源转换开关。 在显示模块中，第一基板，透明型太阳能电池，显示装置和第二基板根据光源的入射方向依次配置。 透明型太阳能电池的可见光透射率为10％〜40％，色温（Tc）大于2400K。 电力存储装置与用于存储电力的透明型太阳能电池连接，驱动电路与驱动电路的显示装置连接。 电源转换开关用于将电力传送到蓄电装置或驱动电路。

公开(公告)号：US20110109607A1

公开(公告)日：2011-05-12

申请号：US12637768

申请日：2009-12-15

申请人： Hsing-Hua Wu ,  Chian-Fu Huang ,  Wei-Yuan Cheng ,  Jyh-Wen Shiu

发明人： Hsing-Hua Wu ,  Chian-Fu Huang ,  Wei-Yuan Cheng ,  Jyh-Wen Shiu

IPC分类号： G09G5/00 ,  H01L31/00

CPC分类号： H01L31/075 ,  G02F2001/13324 ,  G09G3/20 ,  G09G2330/00 ,  G09G2380/14 ,  H01L31/02167 ,  Y02E10/548

摘要： A display module is provided, which includes a first and a second substrates, a transparent type solar cell, a display device, an electric power storage device, a driving circuit and a power supply transfer switch. In the display module, the first substrate, the transparent type solar cell, the display device and the second substrate are successively arranged according to an incident direction of a light source. The transparent type solar cell has a visible light transmittance of 10%-40% and a color temperature (Tc) larger than 2400K. The electric power storage device is connected to the transparent type solar cell for storing electric power there from, and the driving circuit is connected to the display device for driving the same. The power supply transfer switch is used for transferring the electric power into the electric power storage device or the driving circuit.

摘要翻译： 提供一种显示模块，其包括第一和第二基板，透明型太阳能电池，显示装置，电力存储装置，驱动电路和电源转换开关。 在显示模块中，第一基板，透明型太阳能电池，显示装置和第二基板根据光源的入射方向依次配置。 透明型太阳能电池的可见光透射率为10％〜40％，色温（Tc）大于2400K。 电力存储装置与用于存储电力的透明型太阳能电池连接，驱动电路与驱动电路的显示装置连接。 电源转换开关用于将电力传送到蓄电装置或驱动电路。

公开(公告)号：US20110126764A1

公开(公告)日：2011-06-02

申请号：US12689237

申请日：2010-01-19

申请人： Hsiang-Ping Sun ,  Yu-Fan Chen ,  Shun-Yuan Lo ,  Kai-Hsiang Hung ,  Hsing-Hua Wu

发明人： Hsiang-Ping Sun ,  Yu-Fan Chen ,  Shun-Yuan Lo ,  Kai-Hsiang Hung ,  Hsing-Hua Wu

IPC分类号： C23C16/505 ,  C23C16/00

CPC分类号： C23C16/4405

摘要： A gas supply apparatus for introducing gases to a process chamber of a PECVD system is provided. The gas supply apparatus includes a gas inlet tube, a process gas pipe, a cleaning gas pipe, a remote plasma source (RPS) and a variable valve. The RPS is connected with a cleaning gas source, and the cleaning gas pipe is connected between the gas inlet tube and the RPS for introducing a cleaning gas from the RPS to the gas inlet tube. The process gas pipe is connected between the gas inlet tube and a process gas source for introducing a process gas to the gas inlet tube. The variable valve is installed in the gas inlet tube for closing a passage between the cleaning gas pipe and the gas inlet tube to prevent the process gas entering the cleaning gas pipe when the process gas is introduced to the process chamber.

摘要翻译： 提供一种用于将气体引入PECVD系统的处理室的气体供应装置。 气体供给装置包括气体导入管，处理气体管道，清洁气体管道，远程等离子体源（RPS）和可变阀。 RPS与清洁气体源连接，清洁气体管连接在气体入口管和RPS之间，用于将清洁气体从RPS引入气体入口管。 工艺气体管道连接在气体入口管和用于将工艺气体引入进气管的工艺气体源之间。 可变阀安装在气体入口管中，用于关闭清洁气体管道和气体入口管之间的通道，以防止当处理气体被引入处理室时处理气体进入清洁气体管道。

公开(公告)号：US07795683B2

公开(公告)日：2010-09-14

申请号：US11561898

申请日：2006-11-21

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L29/04

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

摘要翻译： 提供薄膜晶体管的结构及其制造方法。 该结构包括条形硅岛，栅极以及第一和第二离子掺杂区域。 带状硅岛是具有预定的长边和短边的薄膜区域，并且还具有基本上平行于硅岛短边的多个横向晶界。 栅极位于硅岛上方并且基本上平行于横向晶界。 用作TFT的源极/漏极区域的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。

公开(公告)号：US20110094573A1

公开(公告)日：2011-04-28

申请号：US12653625

申请日：2009-12-15

申请人： Chien-Liang Wu ,  Jun-Chin Liu ,  Ming-Jyh Chang ,  Hsing-Hua Wu ,  Yu-Ming Wang

发明人： Chien-Liang Wu ,  Jun-Chin Liu ,  Ming-Jyh Chang ,  Hsing-Hua Wu ,  Yu-Ming Wang

IPC分类号： H01L31/0216 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0232

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/056 ,  Y02E10/52

摘要： A solar cell and a method for fabricating the same are provided. The solar cell includes a first electrode, a second electrode, a photoelectric conversion layer and a non-conductive reflector. The first electrode including a nano-metal transparent conductive layer is disposed on a transparent substrate. The nano-metal transparent conductive layer substantially contacts with the photoelectric conversion layer. The second electrode is disposed between the photoelectric conversion layer and the transparent substrate. The photoelectric conversion layer is disposed between the first and the second electrodes. The non-conductive reflector is disposed on the first electrode.

摘要翻译： 提供太阳能电池及其制造方法。 太阳能电池包括第一电极，第二电极，光电转换层和非导电反射器。 包括纳米金属透明导电层的第一电极设置在透明基板上。 纳米金属透明导电层基本上与光电转换层接触。 第二电极设置在光电转换层和透明基板之间。 光电转换层设置在第一和第二电极之间。 非导电反射器设置在第一电极上。

公开(公告)号：US07927929B2

公开(公告)日：2011-04-19

申请号：US12371625

申请日：2009-02-16

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L29/04

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

摘要翻译： 制造薄膜晶体管（TFT）的方法包括首先提供作为具有预定长边和短边的薄膜区域的条状硅岛。 接下来，条状硅岛经受离子注入以形成第一离子掺杂区和第二离子掺杂区。 分别用作TFT的源极和漏极的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。 栅极形成在带状硅岛和第一和第二离子掺杂区之上，其中栅极基本上平行于短边的方向。

公开(公告)号：US20090142886A1

公开(公告)日：2009-06-04

申请号：US12371625

申请日：2009-02-16

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

摘要翻译： 制造薄膜晶体管（TFT）的方法包括首先提供作为具有预定长边和短边的薄膜区域的条状硅岛。 接下来，条状硅岛经受离子注入以形成第一离子掺杂区和第二离子掺杂区。 分别用作TFT的源极和漏极的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。 栅极形成在带状硅岛和第一和第二离子掺杂区之上，其中栅极基本上平行于短边的方向。

公开(公告)号：US20070210310A1

公开(公告)日：2007-09-13

申请号：US11561898

申请日：2006-11-21

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L29/04

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A structure of a thin film transistor and a method for making the same are provided. The structure includes a strip-shaped silicon island, a gate, and a first and second ion doping regions. The strip-shaped silicon island is a thin film region with a predetermined long side and short side, and farther has a plurality of lateral grain boundaries substantially parallel to the short side of the silicon island. The gate is located over the silicon island and substantially parallel to the lateral grain boundaries. The first and second ion doping regions, used as source/drain regions of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate.

摘要翻译： 提供薄膜晶体管的结构及其制造方法。 该结构包括条形硅岛，栅极以及第一和第二离子掺杂区域。 带状硅岛是具有预定的长边和短边的薄膜区域，并且还具有基本上平行于硅岛短边的多个横向晶界。 栅极位于硅岛上方并且基本上平行于横向晶界。 用作TFT的源极/漏极区域的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。