利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

55 条记录 (耗时 0.028 秒)

    POLY(ARYLENE ETHER) COMPOSITION AND EXTRUDED ARTICLES DERIVED THEREFROM
    1.
    发明申请
    POLY(ARYLENE ETHER) COMPOSITION AND EXTRUDED ARTICLES DERIVED THEREFROM 有权
    POLY（ARYLENE ETHER）组合物及其衍生物品

    公开(公告)号：US20100139944A1

    公开(公告)日：2010-06-10

    申请号：US12331802

    申请日：2008-12-10

    申请人： Hua Guo ,  Jian Guo ,  Kazunari Kosaka ,  Xiucuo Li

    发明人： Hua Guo ,  Jian Guo ,  Kazunari Kosaka ,  Xiucuo Li

    IPC分类号： C08K5/53 ,  C08K5/521 ,  C08K5/3492 ,  C08K3/38 ,  C08K3/22 ,  H01B3/30

    CPC分类号： C08L71/12 ,  C08G77/46 ,  C08K5/523 ,  C08L83/12 ,  C08L2205/03 ,  C08L9/06 ,  C08L25/04 ,  C08L53/02

    摘要： A poly(arylene ether) composition includes a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene, a flame retardant, and a poly(arylene ether)-polysiloxane block copolymer reaction product that itself includes a poly(arylene ether)-polysiloxane block copolymer. The composition is useful for forming extruded articles, including insulation for wire and cable. The poly(arylene ether)-polysiloxane block copolymer contributes improved flame retardancy and, in many cases, improved physical properties to the composition.

    摘要翻译： 聚（亚芳基醚）组合物包括烯基芳族化合物和共轭二烯的氢化嵌段共聚物，阻燃剂和聚（亚芳基醚） - 聚硅氧烷嵌段共聚物反应产物，其本身包含聚（亚芳基醚） - 聚硅氧烷 嵌段共聚物。 组合物可用于形成挤出制品，包括电线和电缆的绝缘。 聚（亚芳基醚） - 聚硅氧烷嵌段共聚物有助于改善阻燃性，并且在许多情况下对组合物具有改善的物理性能。

    Poly(arylene ether) composition and extruded articles derived therefrom
    2.
    发明授权
    Poly(arylene ether) composition and extruded articles derived therefrom 有权
    聚（亚芳基醚）组合物和由其衍生的挤出制品

    公开(公告)号：US07847032B2

    公开(公告)日：2010-12-07

    申请号：US12331802

    申请日：2008-12-10

    申请人： Hua Guo ,  Jian Guo ,  Kazunari Kosaka ,  Xiucuo Li

    发明人： Hua Guo ,  Jian Guo ,  Kazunari Kosaka ,  Xiucuo Li

    IPC分类号： C08G65/02 ,  C08G77/04

    CPC分类号： C08L71/12 ,  C08G77/46 ,  C08K5/523 ,  C08L83/12 ,  C08L2205/03 ,  C08L9/06 ,  C08L25/04 ,  C08L53/02

    摘要： A poly(arylene ether) composition includes a hydrogenated block copolymer of an alkenyl aromatic compound and a conjugated diene, a flame retardant, and a poly(arylene ether)-polysiloxane block copolymer reaction product that itself includes a poly(arylene ether)-polysiloxane block copolymer. The composition is useful for forming extruded articles, including insulation for wire and cable. The poly(arylene ether)-polysiloxane block copolymer contributes improved flame retardancy and, in many cases, improved physical properties to the composition.

    摘要翻译： 聚（亚芳基醚）组合物包括烯基芳族化合物和共轭二烯的氢化嵌段共聚物，阻燃剂和聚（亚芳基醚） - 聚硅氧烷嵌段共聚物反应产物，其本身包含聚（亚芳基醚） - 聚硅氧烷 嵌段共聚物。 组合物可用于形成挤出制品，包括电线和电缆的绝缘。 聚（亚芳基醚） - 聚硅氧烷嵌段共聚物有助于改善阻燃性，并且在许多情况下对组合物具有改善的物理性能。

    Plant light
    7.
    外观设计
    Plant light 有权

    公开(公告)号：USD1016972S1

    公开(公告)日：2024-03-05

    申请号：US29822122

    申请日：2022-01-06

    申请人： Jian Guo

    设计人： Jian Guo

    摘要： FIG. 1 is a perspective view of a plant light showing my new design;
    FIG. 2 is a front elevational view thereof;
    FIG. 3 is a rear elevational view thereof; and,
    FIG. 4 is another perspective view thereof.
    The broken lines throughout the drawing figures depict portions of the plant light that form no part of the claimed design.

    Array structure having thin film transistor and connecting structure for gate line charging and manufacturing method thereof
    9.
    发明授权
    Array structure having thin film transistor and connecting structure for gate line charging and manufacturing method thereof 有权
    具有薄膜晶体管的阵列结构和用于栅极线充电的连接结构及其制造方法

    公开(公告)号：US08497970B2

    公开(公告)日：2013-07-30

    申请号：US13105147

    申请日：2011-05-11

    申请人： Jian Guo ,  Weifeng Zhou ,  Xing Ming

    发明人： Jian Guo ,  Weifeng Zhou ,  Xing Ming

    IPC分类号： G02F1/1345 ,  G02F1/133 ,  G09G3/36

    CPC分类号： H01L27/124 ,  G02F1/136286 ,  G02F2001/136272 ,  H01L27/1214

    摘要： An array substrate comprises: a base substrate; a display area comprising gate lines and data lines formed on the base substrate, wherein a pixel electrode and a first thin film transistor are formed in each of pixel units defined by the gate lines and the data lines which are crossed with each other, and the gate lines comprises a first gate line and a second gate line; and a dummy area which is at the periphery of the display area, which comprises a second thin film transistor and a connecting structure for each gate line, wherein the first gate line and the second gate line are connected with each other through the second thin film transistor and the connecting structure for the first gate line.

    摘要翻译： 阵列基板包括：基底; 显示区域，包括形成在基底基板上的栅极线和数据线，其中，在由彼此交叉的栅极线和数据线限定的每个像素单元中形成像素电极和第一薄膜晶体管， 栅极线包括第一栅极线和第二栅极线; 以及位于显示区域的周围的虚拟区域，其包括第二薄膜晶体管和每条栅极线的连接结构，其中第一栅极线和第二栅极线通过第二薄膜彼此连接 晶体管和第一栅极线的连接结构。

    TFT-LCD array substrate and manufacturing method thereof
    10.
    发明授权
    TFT-LCD array substrate and manufacturing method thereof 有权
    TFT-LCD阵列基板及其制造方法

    公开(公告)号：US08441592B2

    公开(公告)日：2013-05-14

    申请号：US12886894

    申请日：2010-09-21

    申请人： Weifeng Zhou ,  Zhenyu Xie ,  Jian Guo ,  Xing Ming ,  Xin Zhao

    发明人： Weifeng Zhou ,  Zhenyu Xie ,  Jian Guo ,  Xing Ming ,  Xin Zhao

    IPC分类号： G02F1/136 ,  G02F1/1333

    CPC分类号： G02F1/136227 ,  G02F1/136286 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

    摘要： A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate comprises: forming a gate line and a gate electrode on a base substrate, and then depositing a gate insulating layer on the base substrate; forming an active layer, a data line, a source electrode, and a drain electrode on the gate insulating layer, and removing the gate insulating layer in the region other than the regions of the active layer, the data line, the source electrode and the drain electrode; forming a first via hole, a second via hole and a third via hole in a photoresist layer by an exposing and developing process; and forming a pixel electrode, a first connection electrode and a second connection electrode on the photosensitive resin layer. The pixel electrode is connected with the drain electrode through the third via hole.

    摘要翻译： 制造薄膜晶体管液晶显示器（TFT-LCD）阵列基板的方法包括：在基底基板上形成栅极线和栅电极，然后在基底基板上沉积栅极绝缘层; 在所述栅极绝缘层上形成有源层，数据线，源电极和漏电极，并且除去所述有源层，所述数据线，所述源极和所述源极之外的区域中的所述栅极绝缘层 漏电极 通过曝光和显影工艺在光致抗蚀剂层中形成第一通孔，第二通孔和第三通孔; 在感光性树脂层上形成像素电极，第一连接电极和第二连接电极。 像素电极通过第三通孔与漏电极连接。