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    Manufacturing method for an electron-emitting source of triode structure
    2.
    发明授权
    Manufacturing method for an electron-emitting source of triode structure 失效
    三极管结构电子发射源的制造方法

    公开(公告)号：US06705910B2

    公开(公告)日：2004-03-16

    申请号：US10067315

    申请日：2002-02-07

    申请人： Jyh-Rong Sheu ,  Jia-Chong Ho ,  Yu-Yang Chang ,  Hua-Chi Cheng ,  Cheng-Chung Lee

    发明人： Jyh-Rong Sheu ,  Jia-Chong Ho ,  Yu-Yang Chang ,  Hua-Chi Cheng ,  Cheng-Chung Lee

    IPC分类号： H01J902

    CPC分类号： B82Y10/00 ,  C25D13/00 ,  H01J3/021 ,  H01J9/025 ,  H01J2201/30469

    摘要： A manufacturing method for an electron-emitting source of triode structure, including forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region, wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing, executing a thermal process step, and removing the hydrophobic layer. According to this method, carbon nanotubes are deposited over a large area in the gate hole.

    摘要翻译： 一种用于三极管结构的电子发射源的制造方法，包括在衬底上形成阴极层，在阴极层上形成电介质层，并在电介质层中定位开口以露出阴极层，其中开口具有 在所述电介质层上形成除了所述周围区域之外的栅极层，在所述开口中形成亲水层，在所述栅极层和所述周围区域形成疏水层，其中所述疏水层与所述亲水层的端部接触 使用喷墨印刷将碳纳米管溶液分散在亲水层上，执行热处理步骤，并除去疏水层。 根据该方法，碳纳米管沉积在栅极孔中的大面积上。

    Method for carbon nanotube emitter surface treatment
    4.
    发明授权
    Method for carbon nanotube emitter surface treatment 失效
    碳纳米管发射体表面处理方法

    公开(公告)号：US07662428B2

    公开(公告)日：2010-02-16

    申请号：US10653990

    申请日：2003-09-04

    申请人： Jyh-Rong Sheu ,  Chun-Tao Lee ,  Cheng-Chung Lee ,  Jia-Chong Ho ,  Yu-Yang Chang

    发明人： Jyh-Rong Sheu ,  Chun-Tao Lee ,  Cheng-Chung Lee ,  Jia-Chong Ho ,  Yu-Yang Chang

    IPC分类号： B05D5/12

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469

    摘要： A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.

    摘要翻译： 用于增加在场致发射显示器的三极管结构器件上暴露的碳纳米管的数量的方法使用铸造表面处理技术。 为了提高CNT发射体的电流密度和幅度，在CNT发射体上进行表面处理的方法包括在器件表面上涂覆粘合剂材料的步骤; 加热用于粘合表面的粘合剂材料; 并将粘合剂材料从表面上提起。

    Carbon nano-tube field emission display having strip shaped gate
    7.
    发明申请
    Carbon nano-tube field emission display having strip shaped gate 失效
    具有带状门的碳纳米管场发射显示器

    公开(公告)号：US20050067938A1

    公开(公告)日：2005-03-31

    申请号：US10724741

    申请日：2003-12-02

    申请人： Jyh-Rong Sheu ,  Chun-Tao Lee ,  Shin-Chiuan Jiang ,  Yu-Yang Chang ,  Cheng-Chung Lee

    发明人： Jyh-Rong Sheu ,  Chun-Tao Lee ,  Shin-Chiuan Jiang ,  Yu-Yang Chang ,  Cheng-Chung Lee

    IPC分类号： H01J1/304 ,  H01J1/02 ,  H01J3/02 ,  H01J29/48 ,  H01J31/12

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J3/021 ,  H01J29/481 ,  H01J31/127 ,  H01J2201/30469 ,  Y10S977/952

    摘要： A carbon nano-tube field emission display has a plurality of strip shaped gate, wherein the strip shaped gate of the triode structure is now in place of the conventional hole shaped gate, moreover, pluralities of cathode electrons are induced by the electric force from the side of the gate. Therefore, when the carbon nano-tube electron emission source emits electrons, which is controlled under the strip shaped gate, and the diffusion direction of the electron beam is confined in the same direction. Consequently, controlling the image pixel and using the particular advantage of triode-structure field emission display significantly improve the image uniformity and the luminous efficiency.

    摘要翻译： 碳纳米管场发射显示器具有多个条状栅极，其中三极管结构的带状栅极现在代替常规的孔形栅极，此外，多个阴极电子由来自 一侧的门。 因此，当碳纳米管电子发射源发射控制在带状栅极下方的电子，并且电子束的扩散方向被限制在相同的方向。 因此，控制图像像素并利用三极管结构场发射显示器的特殊优点，显着提高了图像的均匀性和发光效率。

    Triode CNT-FED structure gate runner and cathode manufactured method
    8.
    发明申请
    Triode CNT-FED structure gate runner and cathode manufactured method 失效
    三极管CNT-FED结构闸流道和阴极制造方法

    公开(公告)号：US20050253501A1

    公开(公告)日：2005-11-17

    申请号：US10863279

    申请日：2004-06-09

    申请人： Ching-Hsun Chao ,  Jane-Hway Liao ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Cheng-Chung Lee

    发明人： Ching-Hsun Chao ,  Jane-Hway Liao ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Cheng-Chung Lee

    IPC分类号： B82B1/00 ,  C01B31/02 ,  H01J1/304 ,  H01J1/62 ,  H01J9/02 ,  H01J63/04

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469

    摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译： 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。 此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。

    Method of improving field emission efficiency for fabricating carbon nanotube field emitters
    9.
    发明授权
    Method of improving field emission efficiency for fabricating carbon nanotube field emitters 失效
    提高制造碳纳米管场致发射体的场致发射效率的方法

    公开(公告)号：US06436221B1

    公开(公告)日：2002-08-20

    申请号：US09779295

    申请日：2001-02-07

    申请人： Yu-Yang Chang ,  Jyh-Rong Sheu ,  Cheng-Chung Lee

    发明人： Yu-Yang Chang ,  Jyh-Rong Sheu ,  Cheng-Chung Lee

    IPC分类号： B32B3100

    CPC分类号： B82Y10/00 ,  C03C17/007 ,  C03C2217/445 ,  C03C2217/475 ,  C03C2217/479 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/742 ,  Y10S977/753 ,  Y10S977/843 ,  Y10S977/845

    摘要： A method of CNT field emission current density improvement performed by a taping process is disclosed. The method comprises following steps. First of all, a conductive pattern coated on a substrate by screen-printing a conductive slurry containing silver through a patterned screen is carried out. Thereafter, a CNT layer is attached thereon by screen-printing a CNT paste through a mesh pattern screen to form CNT image pixel array layer. The CNT paste consists of organic bonding agent, resin, silver powder, and carbon nano-tubes. After that the substrate is soft baked by an oven using a temperature of about 50-200° C. to remove volatile organic solvent. A higher temperature sintering process, for example 350-550° C. is then carried out to solidify the CNT on and electric coupled with the conductive pattern. Finally, an adhesive film is closely attached on the cathode substrate and then remove the adhesive film away so as to remove those badly bonding CNT portions and to vertically pull up a portion of CNT which originally laid down on the surface of CNT layer after sintering. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.

    摘要翻译： 公开了一种通过胶带加工进行CNT场发射电流密度改进的方法。 该方法包括以下步骤。 首先，通过丝网印刷通过图案化屏幕的含银的导电浆料，涂覆在基材上的导电图案。 此后，通过网状图案丝网印刷CNT浆料将CNT层附着在其上，形成CNT图像像素阵列层。 CNT浆料由有机粘合剂，树脂，银粉和碳纳米管组成。 之后，使用约50-200℃的温度通过烘箱软化基底。 去除挥发性有机溶剂。 较高温度的烧结工艺，例如350-550℃。 然后进行CNT的固化并与导电图形电耦合。 最后，将粘合膜紧贴在阴极基板上，然后将粘合膜去除，以便去除这些不良接合的CNT部分，并且在烧结之后垂直拉起原来放置在CNT层表面上的一部分CNT。 因此，发射源的电流密度，亮度和均匀性显着提高。

    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same
    10.
    发明授权
    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
    三极管CNT-FED的共面栅极阴极的结构及其制造方法

    公开(公告)号：US07322869B2

    公开(公告)日：2008-01-29

    申请号：US11490179

    申请日：2006-07-21

    申请人： Ching-Hsun Chao ,  Jane-Hway Liao ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Cheng-Chung Lee

    发明人： Ching-Hsun Chao ,  Jane-Hway Liao ,  Jyh-Rong Sheu ,  Yu-Yang Chang ,  Cheng-Chung Lee

    IPC分类号： H01J9/24 ,  H01J1/62

    CPC分类号： H01J9/025 ,  B82Y10/00 ,  H01J1/304 ,  H01J2201/30469

    摘要： A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译： 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，并且通过印刷平版印刷法在基板上形成，并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。