公开(公告)号：US20060151430A1

公开(公告)日：2006-07-13

申请号：US11358393

申请日：2006-02-21

申请人： Hui Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hui Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L22/26

摘要： A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and (3) determining dynamic processing progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the processing.

摘要翻译： 一种处理多层薄膜的方法，该方法包括：（1）根据选定的参数处理多个层，（2）确定多个光学特性，每个光学特性与多个层之一相关联，并在处理过程中确定 所述多个层中的相关联的一个层，以及（3）基于与经历所述处理的所述多个层中的特定一个层相关联的所述多个光学特性中的一个来确定动态处理进度。

公开(公告)号：US07033518B2

公开(公告)日：2006-04-25

申请号：US10602968

申请日：2003-06-24

申请人： Hui Ou Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hui Ou Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/00

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L22/26

摘要： A method of etching multi-layer films, the method including: (1) etching a plurality of layers according to etching parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the etching of the associated one of the plurality of layers, and (3) determining dynamic etch progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the etching.

摘要翻译： 一种蚀刻多层膜的方法，所述方法包括：（1）根据蚀刻参数蚀刻多个层，（2）确定多个光学特性，每个光学特性与所述多个层之一相关联并且在蚀刻期间确定 所述多个层中的相关联的一个层，以及（3）基于所述多个光学特性之一确定动态蚀刻进展，所述多个光学特性与经历所述蚀刻的所述多个层中的特定一个层相关联。

公开(公告)号：US07354524B2

公开(公告)日：2008-04-08

申请号：US11358393

申请日：2006-02-21

申请人： Hui Ou Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hui Ou Yang ,  Miao-Ju Hsu ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/00 ,  G01N21/00

CPC分类号： H01L21/31116 ,  H01J37/32935 ,  H01L22/26

摘要： A method of processing multi-layer films, the method including: (1) processing a plurality of layers according to selected parameters, (2) determining a plurality of optical characteristics each associated with one of the plurality of layers and determined during the processing of the associated one of the plurality of layers, and (3) determining dynamic processing progressions each based on one of the plurality of optical characteristics that is associated with a particular one of the plurality of layers undergoing the processing.

摘要翻译： 一种处理多层薄膜的方法，该方法包括：（1）根据选定的参数处理多个层，（2）确定多个光学特性，每个光学特性与多个层之一相关联，并在处理过程中确定 所述多个层中的相关联的一个层，以及（3）基于与经历所述处理的所述多个层中的特定一个层相关联的所述多个光学特性中的一个来确定动态处理进度。

公开(公告)号：US07341943B2

公开(公告)日：2008-03-11

申请号：US11053018

申请日：2005-02-08

申请人： Chen-Nan Yeh ,  Miao-Ju Hsu ,  Hun-Jan Tao

发明人： Chen-Nan Yeh ,  Miao-Ju Hsu ,  Hun-Jan Tao

IPC分类号： H01L21/44

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/321 ,  H01L21/76802

摘要： A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.

摘要翻译： 用于蚀刻后铜清洗的方法使用构成等离子体体积的约3-10％的痕量气体添加剂的氢等离子体来清洁通过蚀刻暴露的铜表面。 痕量气体可以是原子态氮或其原子质量为15以上的物质。 痕量气体在等离子体清洗中增加了溅射方面，并且去除了在铜表面沉积介电材料或蚀刻停止层期间形成的聚合物蚀刻副产物和聚合物和其它残余物。 在形成介电材料或蚀刻停止层之前，可以使用防腐溶剂来钝化铜表面。

公开(公告)号：US20060178008A1

公开(公告)日：2006-08-10

申请号：US11053018

申请日：2005-02-08

申请人： Chen-Nan Yeh ,  Miao-Ju Hsu ,  Hun-Jan Tao

发明人： Chen-Nan Yeh ,  Miao-Ju Hsu ,  Hun-Jan Tao

IPC分类号： H01L21/44

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/321 ,  H01L21/76802

摘要： A method for post-etch copper cleaning uses a hydrogen plasma with a trace gas additive constituting about 3-10 percent of the plasma by volume to clean a copper surface exposed by etching. The trace gas may be atomic nitrogen or other species having an atomic mass of 15 or greater. The trace gas adds a sputtering aspect to the plasma cleaning and removes polymeric etch by-products and polymeric and other residuals formed during the deposition of dielectric materials or etch stop layers over the copper surface. An anti-corrosion solvent may be used to passivate the copper surface prior to formation of the dielectric materials or etch stop layers.

摘要翻译： 用于蚀刻后铜清洗的方法使用构成等离子体体积的约3-10％的痕量气体添加剂的氢等离子体来清洁通过蚀刻暴露的铜表面。 痕量气体可以是原子态氮或其原子质量为15以上的物质。 痕量气体在等离子体清洗中增加了溅射方面，并且去除了在铜表面沉积介电材料或蚀刻停止层期间形成的聚合物蚀刻副产物和聚合物和其它残余物。 在形成介电材料或蚀刻停止层之前，可以使用防腐溶剂来钝化铜表面。

公开(公告)号：US6040248A

公开(公告)日：2000-03-21

申请号：US104032

申请日：1998-06-24

申请人： Chao-Cheng Chen ,  Ming-Hsin Huang ,  Hun-Jan Tao ,  Chia-Shiung Tsai

发明人： Chao-Cheng Chen ,  Ming-Hsin Huang ,  Hun-Jan Tao ,  Chia-Shiung Tsai

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/302 ,  C23F1/02 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01L21/76802

摘要： A process for plasma etching of contact and via openings in low-k organic polymer dielectric layers is described which overcomes problems of sidewall bowing and hardmask pattern deterioration by etching the organic layer in a high density plasma etcher with a chlorine/inert gas plasma. By adding chlorine to the oxygen/inert gas plasma, the development of an angular aspect or faceting of the hardmask pattern edges by ion bombardment is abated. Essentially vertical sidewalls are obtained in the openings etched in the organic polymer layer while hardmask pattern integrity is maintained. The addition of a passivating agent such as nitrogen, BCl.sub.3, or CHF.sub.3 to the etchant gas mixture further improves the sidewall profile by reducing bowing through protective polymer formation.

摘要翻译： 描述了一种用于等离子体蚀刻低k有机聚合物介电层中的接触和通孔开口的方法，其通过用氯/惰性气体等离子体在高密度等离子体蚀刻机中蚀刻有机层来克服侧壁弯曲和硬掩模图案劣化的问题。 通过向氧/惰性气体等离子体中加入氯，减少了通过离子轰击形成硬掩模图案边缘的角度方面或刻面。 在保持硬掩模图案完整性的同时，在有机聚合物层中蚀刻的开口中获得基本垂直的侧壁。 钝化剂如氮气，BCl3或CHF3添加到蚀刻剂气体混合物中，通过减少通过保护性聚合物形成的弯曲来进一步改善侧壁轮廓。

公开(公告)号：US20100190349A1

公开(公告)日：2010-07-29

申请号：US12798201

申请日：2010-03-30

申请人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Huang-Ming Chen ,  Chun-Li Chou ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L21/465 ,  C23F1/00

CPC分类号： H01L21/68735 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/02046 ,  H01L21/31116 ,  H01L21/67069 ,  Y10S156/914 ,  Y10S156/915 ,  Y10T279/23

摘要： A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

摘要翻译： 防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。 该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底，在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度，使用包括悬浮衬底的两步骤等离子体清洗序列 在卡盘上方

公开(公告)号：US20050184388A1

公开(公告)日：2005-08-25

申请号：US10782365

申请日：2004-02-19

申请人： Hsin-Ching Shih ,  Kang-Cheng Lin ,  Chao-Cheng Chen ,  Hun-Jan Tao

发明人： Hsin-Ching Shih ,  Kang-Cheng Lin ,  Chao-Cheng Chen ,  Hun-Jan Tao

IPC分类号： H01L23/48 ,  H01L23/58

CPC分类号： H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： In accordance with the objective of the invention a new method is provided for the creation of a seal ring having dissimilar elements. The Critical Dimensions of the seal ring are selected with respect to the CD of other device features, such a seal vias, such that the difference in etch sensitivity between the created seal ring and the via holes is removed. All etch of the simultaneously etched features is completed at the same time, avoiding punch through of an underlying layer of etch stop material.

摘要翻译： 根据本发明的目的，提供了一种用于创建具有不同元件的密封环的新方法。 密封环的临界尺寸相对于其它装置特征（例如密封通孔）的CD被选择，使得所产生的密封环和通孔之间的蚀刻敏感性的差异被去除。 同时蚀刻的特征的所有蚀刻同时完成，避免冲蚀下一层蚀刻停止材料。

公开(公告)号：US06821880B1

公开(公告)日：2004-11-23

申请号：US10725138

申请日：2003-12-01

申请人： Hun-Jan Tao ,  Chao-Cheng Chen

发明人： Hun-Jan Tao ,  Chao-Cheng Chen

IPC分类号： H01L214763

CPC分类号： H01L21/76814 ,  H01L21/67155 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76838

摘要： A process of dual damascene or damascene. The dual damascene process entails providing an etching apparatus, a DCM machine and a wafer, the wafer having a metal line, a stop layer, a dielectric layer, a contact, and a photoresist layer. The dielectric layer and the contact are etched in the etching apparatus to form a trench. The photoresist and the contact are ashed in the DCM machine. Finally the wafer is wet cleaned.

摘要翻译： 一个双镶嵌或镶嵌的过程。 双镶嵌工艺需要提供蚀刻装置，DCM机器和晶片，晶片具有金属线，阻挡层，介电层，接触和光致抗蚀剂层。 在蚀刻装置中蚀刻介电层和接触以形成沟槽。 在DCM机器中将光致抗蚀剂和接触物灰化。 最后将晶片湿式清洗。

公开(公告)号：US6130167A

公开(公告)日：2000-10-10

申请号：US270593

申请日：1999-03-18

申请人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

发明人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/76888 ,  H01L21/31116

摘要： A process used to prevent attack of an aluminum based structure, exposed in a non-fully landed via hole, from solvents used during the wet stripping cycle, performed to remove the via hole defining photoresist shape, has been developed. The process features the formation of a protective aluminum oxide layer, on the exposed side of the aluminum based structure, via use of a plasma treatment, performed in an H.sub.2 O/N.sub.2 ambient. The H.sub.2 O/N.sub.2 plasma treatment procedure is performed after a dry plasma, photoresist stripping step, but prior to a final wet photoresist stripping step. The aluminum oxide layer offers protection of the exposed regions of the aluminum structure, located in the non-fully landed via hole, from reaction or corrosion, that can result from exposure of aluminum to the solvents used in the final wet photoresist stripping cycle.

摘要翻译： 已经开发了一种用于防止暴露在非完全着陆的通孔中的铝基结构从在湿式剥离循环期间使用的溶剂的侵蚀的过程，以去除限定光致抗蚀剂形状的通孔。 该方法的特征在于在基于铝的结构的暴露侧上通过使用在H 2 O / N 2环境中进行的等离子体处理形成保护性氧化铝层。 H 2 O / N 2等离子体处理程序在干等离子体，光致抗蚀剂剥离步骤之后，但在最后的湿光致抗蚀剂剥离步骤之前进行。 氧化铝层提供保护位于非完全着陆的通孔中的铝结构的暴露区域不受反应或腐蚀的影响，这可能是由于将铝暴露于最终湿光致抗蚀剂剥离循环中使用的溶剂而导致的。