公开(公告)号：US20090152651A1

公开(公告)日：2009-06-18

申请号：US11958595

申请日：2007-12-18

申请人： Huiming Bu ,  Rick Carter ,  Michael P. Chudzik ,  Troy L. Graves ,  Michael A. Gribelyuk ,  Rashmi Jha ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Hongwen Yan ,  Bruce B. Doris ,  Keith Kwong Hon Wong

发明人： Huiming Bu ,  Rick Carter ,  Michael P. Chudzik ,  Troy L. Graves ,  Michael A. Gribelyuk ,  Rashmi Jha ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Hongwen Yan ,  Bruce B. Doris ,  Keith Kwong Hon Wong

IPC分类号： H01L29/78

CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517

摘要： A transistor has a channel region in a substrate and source and drain regions in the substrate on opposite sides of the channel region. A gate stack is formed on the substrate above the channel region. This gate stack comprises an interface layer contacting the channel region of the substrate, and a high-k dielectric layer (having a dielectric constant above 4.0) contacting (on) the interface layer. A Nitrogen rich first metal Nitride layer contacts (is on) the dielectric layer, and a metal rich second metal Nitride layer contacts (is on) the first metal Nitride layer. Finally, a Polysilicon cap contacts (is on) the second metal Nitride layer.

摘要翻译： 晶体管在衬底中具有通道区域，在沟道区域的相对侧上具有衬底中的源极和漏极区域。 栅极堆叠形成在沟道区域上方的衬底上。 该栅极堆叠包括与衬底的沟道区域接触的界面层和与界面层（上）接触的高k电介质层（介电常数高于4.0）。 富氮的第一金属氮化物层在电介质层上接触，并且富金属的第二金属氮化物层与第一金属氮化物层接触（在）上。 最后，多晶硅帽与第二金属氮化物层接触（在）上。

公开(公告)号：US20100038725A1

公开(公告)日：2010-02-18

申请号：US12190220

申请日：2008-08-12

申请人： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

发明人： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/49 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4958 ,  H01L29/517

摘要： Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

摘要翻译： 提出了离子注入来改变双功能金属栅极整合的有效功函数。 一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

公开(公告)号：US08753936B2

公开(公告)日：2014-06-17

申请号：US12190220

申请日：2008-08-12

申请人： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

发明人： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L21/8234

CPC分类号： H01L29/49 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4958 ,  H01L29/517

摘要： Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

摘要翻译： 提出了离子注入来改变双功能金属栅极整合的有效功函数。 一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

公开(公告)号：US20100044805A1

公开(公告)日：2010-02-25

申请号：US12609555

申请日：2009-10-30

申请人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

发明人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

IPC分类号： H01L29/78

CPC分类号： H01L21/28088 ,  H01L21/28518 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a metal nitrogen-containing layer located on a surface of a high-k gate dielectric and Si-containing conductor located directly on a surface of the metal nitrogen-containing layer. The improved reliability is achieved by utilizing a metal nitrogen-containing layer having a compositional ratio of metal to nitrogen of less than 1.1. The inventive gate stack can be useful as an element of a complementary metal oxide semiconductor (CMOS). The present invention also provides a method of fabricating such a gate stack in which the process conditions of a sputtering process are varied to control the ratio of metal and nitrogen within the sputter deposited layer.

摘要翻译： 提供了具有改进的可靠性（即，低电荷捕获和栅极泄漏劣化）的多层栅极堆叠。 本发明的多层栅极堆叠包括位于位于金属含氮层的表面上的高k栅极电介质和含Si导体的表面上的含金属层的底部至顶部。 通过利用具有小于1.1的金属与氮的组成比的金属含氮层来实现提高的可靠性。 本发明的栅叠层可用作互补金属氧化物半导体（CMOS）的元件。 本发明还提供一种制造这种栅叠层的方法，其中改变溅射工艺的工艺条件以控制溅射沉积层内的金属和氮的比例。

公开(公告)号：US20090152636A1

公开(公告)日：2009-06-18

申请号：US11954749

申请日：2007-12-12

申请人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

发明人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L21/336 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517

摘要： Methods, IC and related transistors using capping layer with high-k/metal gate stacks are disclosed. In one embodiment, the IC includes a first type transistor having a gate electrode including a first metal, a second metal and a first dielectric layer, the first dielectric layer including oxygen; a second type transistor separated from the first type transistor by an isolation region, the second type transistor having a gate electrode including the second metal having a work function appropriate for the second type transistor and the first dielectric layer; and wherein the gate electrode of the first type transistor includes a rare earth metal between the first metal and the second metal and the gate electrode of the second type transistor includes a second dielectric layer made of an oxide of the rare earth metal.

摘要翻译： 公开了使用具有高k /金属栅极叠层的封盖层的IC和相关晶体管。 在一个实施例中，IC包括具有包括第一金属，第二金属和第一介电层的栅电极的第一类型晶体管，第一介电层包括氧; 通过隔离区与第一型晶体管分离的第二类型晶体管，第二类型晶体管具有包括具有适合于第二类型晶体管和第一介电层的功函数的第二金属的栅电极; 并且其中所述第一类型晶体管的栅极包括在所述第一金属和所述第二金属之间的稀土金属，并且所述第二类型晶体管的栅电极包括由所述稀土金属的氧化物制成的第二电介质层。

公开(公告)号：US20080191292A1

公开(公告)日：2008-08-14

申请号：US11673901

申请日：2007-02-12

申请人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

发明人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

IPC分类号： H01L29/49 ,  H01L21/3205

CPC分类号： H01L21/28088 ,  H01L21/28518 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a metal nitrogen-containing layer located on a surface of a high-k gate dielectric and Si-containing conductor located directly on a surface of the metal nitrogen-containing layer. The improved reliability is achieved by utilizing a metal nitrogen-containing layer having a compositional ratio of metal to nitrogen of less than 1.1. The inventive gate stack can be useful as an element of a complementary metal oxide semiconductor (CMOS). The present invention also provides a method of fabricating such a gate stack in which the process conditions of a sputtering process are varied to control the ratio of metal and nitrogen within the sputter deposited layer.

摘要翻译： 提供了具有改进的可靠性（即，低电荷捕获和栅极泄漏劣化）的多层栅极堆叠。 本发明的多层栅极堆叠包括位于位于金属含氮层的表面上的高k栅极电介质和含Si导体的表面上的含金属层的底部至顶部。 通过利用具有小于1.1的金属与氮的组成比的金属含氮层来实现提高的可靠性。 本发明的栅叠层可用作互补金属氧化物半导体（CMOS）的元件。 本发明还提供一种制造这种栅叠层的方法，其中改变溅射工艺的工艺条件以控制溅射沉积层内的金属和氮的比例。

公开(公告)号：US20120184093A1

公开(公告)日：2012-07-19

申请号：US13433659

申请日：2012-03-29

申请人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

发明人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L21/28

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517

摘要： Methods, IC and related transistors using capping layer with high-k/metal gate stacks are disclosed. In one embodiment, the IC includes a first type transistor having a gate electrode including a first metal, a second metal and a first dielectric layer, the first dielectric layer including oxygen; a second type transistor separated from the first type transistor by an isolation region, the second type transistor having a gate electrode including the second metal having a work function appropriate for the second type transistor and the first dielectric layer; and wherein the gate electrode of the first type transistor includes a rare earth metal between the first metal and the second metal and the gate electrode of the second type transistor includes a second dielectric layer made of an oxide of the rare earth metal.

摘要翻译： 公开了使用具有高k /金属栅极叠层的封盖层的IC和相关晶体管。 在一个实施例中，IC包括具有包括第一金属，第二金属和第一介电层的栅电极的第一类型晶体管，第一介电层包括氧; 通过隔离区与第一型晶体管分离的第二类型晶体管，第二类型晶体管具有包括具有适合于第二类型晶体管和第一介电层的功函数的第二金属的栅电极; 并且其中所述第一类型晶体管的栅极包括在所述第一金属和所述第二金属之间的稀土金属，并且所述第二类型晶体管的栅电极包括由所述稀土金属的氧化物制成的第二电介质层。

公开(公告)号：US09236314B2

公开(公告)日：2016-01-12

申请号：US13433659

申请日：2012-03-29

申请人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

发明人： Michael P. Chudzik ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC分类号： H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517

摘要： Methods, IC and related transistors using capping layer with high-k/metal gate stacks are disclosed. In one embodiment, the IC includes a first type transistor having a gate electrode including a first metal, a second metal and a first dielectric layer, the first dielectric layer including oxygen; a second type transistor separated from the first type transistor by an isolation region, the second type transistor having a gate electrode including the second metal having a work function appropriate for the second type transistor and the first dielectric layer; and wherein the gate electrode of the first type transistor includes a rare earth metal between the first metal and the second metal and the gate electrode of the second type transistor includes a second dielectric layer made of an oxide of the rare earth metal.

摘要翻译： 公开了使用具有高k /金属栅极叠层的封盖层的IC和相关晶体管。 在一个实施例中，IC包括具有包括第一金属，第二金属和第一介电层的栅电极的第一类型晶体管，第一介电层包括氧; 通过隔离区与第一型晶体管分离的第二类型晶体管，第二类型晶体管具有包括具有适合于第二类型晶体管和第一介电层的功函数的第二金属的栅电极; 并且其中所述第一类型晶体管的栅极包括在所述第一金属和所述第二金属之间的稀土金属，并且所述第二类型晶体管的栅电极包括由所述稀土金属的氧化物制成的第二电介质层。

公开(公告)号：US07611979B2

公开(公告)日：2009-11-03

申请号：US11673901

申请日：2007-02-12

申请人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

发明人： Alessandro C. Callegari ,  Michael P. Chudzik ,  Barry P. Linder ,  Renee T. Mo ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri ,  Sufi Zafar

IPC分类号： H01L21/3205 ,  H01L21/28

CPC分类号： H01L21/28088 ,  H01L21/28518 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665

摘要： A multilayered gate stack having improved reliability (i.e., low charge trapping and gate leakage degradation) is provided. The inventive multilayered gate stack includes, from bottom to top, a metal nitrogen-containing layer located on a surface of a high-k gate dielectric and Si-containing conductor located directly on a surface of the metal nitrogen-containing layer. The improved reliability is achieved by utilizing a metal nitrogen-containing layer having a compositional ratio of metal to nitrogen of less than 1.1. The inventive gate stack can be useful as an element of a complementary metal oxide semiconductor (CMOS). The present invention also provides a method of fabricating such a gate stack in which the process conditions of a sputtering process are varied to control the ratio of metal and nitrogen within the sputter deposited layer.

摘要翻译： 提供了具有改进的可靠性（即，低电荷捕获和栅极泄漏劣化）的多层栅极堆叠。 本发明的多层栅极堆叠包括位于位于金属含氮层的表面上的高k栅极电介质和含Si导体的表面上的含金属层的底部至顶部。 通过利用具有小于1.1的金属与氮的组成比的金属含氮层来实现提高的可靠性。 本发明的栅叠层可用作互补金属氧化物半导体（CMOS）的元件。 本发明还提供一种制造这种栅叠层的方法，其中改变溅射工艺的工艺条件以控制溅射沉积层内的金属和氮的比例。

公开(公告)号：US07947549B2

公开(公告)日：2011-05-24

申请号：US12037158

申请日：2008-02-26

申请人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Dae-Gyu Park ,  Michael P Chudzik ,  Rashmi Jha ,  Siddarth A Krishnan ,  Naim Moumen ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8238

CPC分类号： H01L21/823857 ,  H01L21/823842 ,  H01L29/785

摘要： CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

摘要翻译： 公开了CMOS电路结构，其中PFET和NFET器件具有由相同的栅极绝缘体材料构成的高k电介质层以及由相同栅极金属材料组成的金属栅极层。 PFET器件具有能够沿p方向移动栅极的有效功能的“p”接口控制层。 在本发明的代表性实施例中，“p”界面控制层是氧化铝。 NFET器件可以具有“n”个界面控制层。 “p”和“n”界面控制层的材料是不同的材料。 “p”和“n”界面控制层位于其相应的高k电介质层的相对侧。 还公开了制造具有相对定位的“p”和“n”界面控制层的CMOS电路结构的方法。