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    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
    1.
    发明授权
    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same 有权
    薄膜晶体管及其制造方法，包括薄膜晶体管的有机发光显示装置及其制造方法

    公开(公告)号：US07786494B2

    公开(公告)日：2010-08-31

    申请号：US12149944

    申请日：2008-05-09

    申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    IPC分类号： H01L29/18

    CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

    摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

    摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    2.
    发明申请
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 失效
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号：US20100026169A1

    公开(公告)日：2010-02-04

    申请号：US12382743

    申请日：2009-03-23

    申请人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

    发明人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

    IPC分类号： H01J1/62 ,  H01L29/10 ,  H01L21/16 ,  H01L29/08

    CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

    摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

    摘要翻译： 公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。 薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极 耦合到源区和漏区。 氧化物半导体层包括第一层部分和第二层部分。 第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。 第二载流子浓度低于第一载流子浓度。

    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
    4.
    发明申请
    Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same 有权
    薄膜晶体管及其制造方法，包括薄膜晶体管的有机发光显示装置及其制造方法

    公开(公告)号：US20080277658A1

    公开(公告)日：2008-11-13

    申请号：US12149944

    申请日：2008-05-09

    申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

    IPC分类号： H01L29/22 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

    摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

    摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

    Method of manufacturing display device including thin film transistor
    5.
    发明授权
    Method of manufacturing display device including thin film transistor 失效
    制造包括薄膜晶体管的显示装置的方法

    公开(公告)号：US08546164B2

    公开(公告)日：2013-10-01

    申请号：US13293158

    申请日：2011-11-10

    申请人： Hong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

    发明人： Hong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

    IPC分类号： H01L21/36

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

    摘要翻译： 一种薄膜晶体管（TFT），包括基板，基板上的栅电极，包括沟道区，源极区和漏极区的氧化物半导体层，栅电极和氧化物半导体层之间的栅极绝缘层 以及与氧化物半导体层的源极和漏极区域接触的源极和漏极，其中氧化物半导体层具有包括下层和上层的GaInZnO（GIZO）双层结构，并且上层具有 不同的铟（In）浓度比下层。

    Flexible flat panel display
    8.
    发明授权
    Flexible flat panel display 有权
    柔性平板显示屏

    公开(公告)号：US07593086B2

    公开(公告)日：2009-09-22

    申请号：US11523607

    申请日：2006-09-20

    申请人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

    发明人： Jae-Kyeong Jeong ,  Jae-Bon Koo ,  Hyun-Soo Shin ,  Se-Yeoul Kwon ,  Yeon-Gon Mo

    IPC分类号： G02F1/1345

    CPC分类号： H01L27/3276 ,  H01L2251/5338

    摘要： A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.

    摘要翻译： 即使显示单元弯曲，柔性平板显示器也可防止电子单元，例如柔性印刷电路板和驱动IC与柔性平板显示器分离。 柔性平板显示器包括：柔性显示单元，包括适于显示图像的显示区域，平行于显示区域边缘的第一侧面和第二侧面，以及垂直于第一和第二侧面的第三侧面和第四侧面 侧面，第三面和第四面适于弯曲; 以及仅在第一和第二侧中的至少一个上排列并且不存在第三和第四侧的电子单元。

    Thin film transistor, display device, including the same, and associated methods
    10.
    发明授权
    Thin film transistor, display device, including the same, and associated methods 有权
    薄膜晶体管，显示装置，包括相同的方法和相关的方法

    公开(公告)号：US08058645B2

    公开(公告)日：2011-11-15

    申请号：US12385197

    申请日：2009-04-01

    申请人： Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

    发明人： Jong-Han Jeong ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Hui-Won Yang

    IPC分类号： H01L29/12

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.

    摘要翻译： 一种薄膜晶体管（TFT），包括基板，基板上的栅电极，包括沟道区，源极区和漏极区的氧化物半导体层，栅电极和氧化物半导体层之间的栅极绝缘层 以及与氧化物半导体层的源极和漏极区域接触的源极和漏极，其中氧化物半导体层具有包括下层和上层的GaInZnO（GIZO）双层结构，并且上层具有 不同的铟（In）浓度比下层。