公开(公告)号：US08466465B2

公开(公告)日：2013-06-18

申请号：US12382743

申请日：2009-03-23

申请人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L27/108 ,  H01L29/12 ,  H01L29/15

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

摘要翻译： 公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。 薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极 耦合到源区和漏区。 氧化物半导体层包括第一层部分和第二层部分。 第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。 第二载流子浓度低于第一载流子浓度。

公开(公告)号：US20100026169A1

公开(公告)日：2010-02-04

申请号：US12382743

申请日：2009-03-23

申请人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01J1/62 ,  H01L29/10 ,  H01L21/16 ,  H01L29/08

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

摘要翻译： 公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。 薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极 耦合到源区和漏区。 氧化物半导体层包括第一层部分和第二层部分。 第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。 第二载流子浓度低于第一载流子浓度。

公开(公告)号：US07786494B2

公开(公告)日：2010-08-31

申请号：US12149944

申请日：2008-05-09

申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/18

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

公开(公告)号：US20080277658A1

公开(公告)日：2008-11-13

申请号：US12149944

申请日：2008-05-09

申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

摘要： A thin film transistor includes a gate electrode; an active layer formed of an oxide and insulated from the gate electrode; and a source electrode and a drain electrode formed of an oxide on the active layer such that the source electrode and the drain electrode are insulated from the gate electrode and electrically connected to the active layer, wherein the active layer, the source and the drain electrode are formed using an atomic layer deposition (ALD) and an insitu process, and a root mean square (RMS) value of the surface roughness of the active layer which contacts with the source and drain electrodes is less than 1 nm in order to reduce the contact resistance between the active layer and the source and drain electrodes, a method of manufacturing the same, an organic light emitting display apparatus including the thin film transistor, and a method of manufacturing the same.

摘要翻译： 薄膜晶体管包括栅电极; 由氧化物形成并与栅电极绝缘的有源层; 以及由有源层上的氧化物形成的源电极和漏电极，使得源电极和漏电极与栅电极绝缘并与有源层电连接，其中有源层，源电极和漏电极 使用原子层沉积（ALD）和本征工艺形成，并且与源极和漏极接触的有源层的表面粗糙度的均方根（RMS）值小于1nm，以便减少 有源层与源电极和漏电极之间的接触电阻，其制造方法，包括该薄膜晶体管的有机发光显示装置及其制造方法。

公开(公告)号：US08698215B2

公开(公告)日：2014-04-15

申请号：US11763373

申请日：2007-06-14

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L27/127 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

摘要翻译： 薄膜晶体管（TFT）及其制造方法可以在半导体层和源电极之间或半导体层与漏电极之间形成欧姆接触，其中TFT可以应用于塑料基板 。 TFT包括：基板; 在衬底上由ZnO，InZnO，ZnSnO和/或ZnInGaO形成的有源层，包括沟道区，源极区和漏极区; 与有源层绝缘的栅电极; 以及与栅电极绝缘并分别电连接到源极区和漏极区的源极和漏极，其中有源层的源极区和漏极区包括氢。

公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US07994500B2

公开(公告)日：2011-08-09

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。

公开(公告)号：US20110108830A1

公开(公告)日：2011-05-12

申请号：US12826418

申请日：2010-06-29

申请人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to an oxide semiconductor made of ZnSnO to adjust concentration of carrier and to enhance reliability of the oxide semiconductor, and an organic light emitting display device having the same.

摘要翻译： 提供了一种薄膜晶体管，其表现出稳定的可靠性和电特性，通过添加具有如Hf之类的氧的电负性差大的材料和类似于Zn或SN的原子半径的材料形成有源层到由ZnSnO制成的氧化物半导体， 调整载体的浓度并提高氧化物半导体的可靠性，以及具有该氧化物半导体的有机发光显示装置。

公开(公告)号：US20090321732A1

公开(公告)日：2009-12-31

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。