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    Method of fast analog layout migration
    3.
    发明授权
    Method of fast analog layout migration 有权
    快速模拟布局迁移的方法

    公开(公告)号：US08607182B2

    公开(公告)日：2013-12-10

    申请号：US13476027

    申请日：2012-05-21

    申请人： Tung-Chieh Chen ,  Hung-Ming Chen ,  Yi-Peng Weng

    发明人： Tung-Chieh Chen ,  Hung-Ming Chen ,  Yi-Peng Weng

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G06F17/5072 ,  G06F2217/06

    摘要： A method of fast analog layout migration from an original layout is disclosed. Various placement constraints, including topology, matching and symmetry are extracted from the schematic or netlist as well as the original layout. In addition, relative placement patterns are extracted from the original layout for matching and symmetry constraints. A constraint hierarchy tree can be built according to the constraints, and relative placement patterns are attached accordingly. By using the constraint hierarchy tree, multiple new placement results are efficiently explored that preserve the relative placement patterns for matching and symmetry constraints.

    摘要翻译： 公开了一种从原始布局进行快速模拟布局迁移的方法。 从原理图或网表以及原始布局中提取了各种布局约束，包括拓扑，匹配和对称性。 此外，从原始布局中提取相对放置图案以进行匹配和对称约束。 可以根据约束构建约束层次树，并相应地附加相对布局模式。 通过使用约束层次树，有效地探索了多个新的布局结果，保留了匹配和对称约束的相对布局模式。

    FinFET and method of fabricating the same
    4.
    发明授权
    FinFET and method of fabricating the same 有权
    FinFET及其制造方法

    公开(公告)号：US08440517B2

    公开(公告)日：2013-05-14

    申请号：US12903712

    申请日：2010-10-13

    申请人： Hung-Ta Lin ,  Chu-Yun Fu ,  Shin-Yeh Huang ,  Shu-Tine Yang ,  Hung-Ming Chen

    发明人： Hung-Ta Lin ,  Chu-Yun Fu ,  Shin-Yeh Huang ,  Shu-Tine Yang ,  Hung-Ming Chen

    IPC分类号： H01L21/02

    CPC分类号： H01L27/0886 ,  H01L21/02293 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7855

    摘要： The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.

    摘要翻译： 本发明涉及鳍状场效应晶体管（FinFET）。 FinFET的示例性结构包括：包括顶表面的衬底; 第一绝缘区域和位于衬底顶表面上的第二绝缘区域，包括锥形顶表面; 在所述第一和第二绝缘区域之间延伸到所述衬底顶表面之上的所述衬底的翅片，其中所述鳍片包括具有比所述第一和第二绝缘区域的锥形顶表面低的顶表面的凹陷部分，其中所述鳍片包括非 加工部分具有高于锥形顶表面的顶表面; 以及在翅片的非凹陷部分上方的栅极堆叠。

    IN-SITU SPECTROMETRY
    5.
    发明申请
    IN-SITU SPECTROMETRY 审中-公开
    现场光谱

    公开(公告)号：US20120009690A1

    公开(公告)日：2012-01-12

    申请号：US12834617

    申请日：2010-07-12

    申请人： Clement Hsingjen Wann ,  Hung-Ming Chen ,  Chang-Yun Chang ,  Sey-Ping Sun

    发明人： Clement Hsingjen Wann ,  Hung-Ming Chen ,  Chang-Yun Chang ,  Sey-Ping Sun

    IPC分类号： H01L21/66 ,  B08B3/04

    CPC分类号： H01L21/67075 ,  H01L21/67276 ,  H01L22/12

    摘要： The present disclosure provides a system for in-situ spectrometry. The system includes a wafer-cleaning machine that cleans a surface of a semiconductor wafer using a cleaning solution. The system also includes a spectrometry machine that is coupled to the wafer-cleaning machine. The spectrometry machine receives a portion of the cleaning solution from the wafer-cleaning machine. The portion of the cleaning solution collects particles from the wafer during the cleaning. The spectrometry machine is operable to analyze a particle composition of a portion of the wafer based on the portion of the cleaning solution, while the wafer remains in the wafer-cleaning machine during the particle composition analysis.

    摘要翻译： 本公开提供了一种用于原位光谱法的系统。 该系统包括使用清洁溶液清洁半导体晶片的表面的晶片清洁机。 该系统还包括耦合到晶片清洁机的光谱测定机。 光谱测定机从晶片清洁机接收清洁溶液的一部分。 在清洁期间，清洁溶液的一部分从晶片收集颗粒。 光谱测定仪可操作以基于清洁溶液的一部分分析晶片的一部分的颗粒组成，同时在颗粒组成分析期间晶片保留在晶片清洁机中。

    Mobile electronic device
    6.
    发明授权
    Mobile electronic device 失效
    移动电子设备

    公开(公告)号：US08005520B2

    公开(公告)日：2011-08-23

    申请号：US12124423

    申请日：2008-05-21

    申请人： Hung-Ming Chen ,  Pin-Chu Tsai

    发明人： Hung-Ming Chen ,  Pin-Chu Tsai

    IPC分类号： H04M1/00

    CPC分类号： H05K5/0234 ,  G06F1/1616 ,  G06F1/1656 ,  G06F1/1677 ,  G06F1/1688

    摘要： A mobile electronic device includes a main body, a support frame, and a switch. When the support frame is in the first mode and used to support the main body, the main body is required to execute the first function by the support frame and the switch. For example, the first function is used to control the display and includes related functions of multimedia reproducing. In addition, when the support frame is in the second mode and used to support the main body, the main body is required to execute the second function by the support frame and the switch. For example, the second function is used to control the speaker and includes related functions. Whereby, the mobile electronic device includes different two modes to instinctively and automatically switch between video and audio files reproducing.

    摘要翻译： 移动电子设备包括主体，支撑框架和开关。 当支撑框架处于第一模式并用于支撑主体时，主体需要通过支撑框架和开关执行第一个功能。 例如，第一功能用于控制显示并且包括多媒体再现的相关功能。 此外，当支撑框架处于第二模式并用于支撑主体时，主体需要通过支撑框架和开关执行第二功能。 例如，第二功能用于控制扬声器并包括相关功能。 因此，移动电子设备包括不同的两种模式，以本能地和自动地在视频和音频文件再现之间切换。

    HANDHELD COMMUNICATION DEVICE HAVING DUAL OPERATING MODES
    7.
    发明申请
    HANDHELD COMMUNICATION DEVICE HAVING DUAL OPERATING MODES 审中-公开
    具有双操作模式的手持通信设备

    公开(公告)号：US20090111508A1

    公开(公告)日：2009-04-30

    申请号：US11926306

    申请日：2007-10-29

    申请人： Wang-Hung Yeh ,  Hung-Ming Chen

    发明人： Wang-Hung Yeh ,  Hung-Ming Chen

    IPC分类号： H04M1/00

    CPC分类号： H04M1/0235 ,  G06F1/1624 ,  G06F1/1669 ,  G06F3/0231 ,  H04M1/0256

    摘要： A handheld communication device having dual operating modes includes a casing, a display and a keyboard. The casing is formed with an accommodating trough. One side of the accommodating trough is provided with a first connecting port. Further, the casing is provided thereon with a receiver. The display is sealed to cover on the accommodating trough and is displaceable with respect to the casing. The keyboard is detachably received in the accommodating trough. One side of the keyboard is provided with a second connecting port for insertion to correspond to the first connecting port. The keyboard is provided with an emitter for transmitting wireless signals to the receiver and a battery module for providing the necessary power of the emitter. Via the mutual insertion and disconnection between the second connecting port and the first connecting port, wired and wireless operating modes can be switched.

    摘要翻译： 具有双操作模式的手持通信设备包括壳体，显示器和键盘。 壳体形成有容纳槽。 容纳槽的一侧设置有第一连接口。 此外，壳体设置有接收器。 显示器被密封以覆盖在容纳槽上并且可相对于壳体移动。 键盘可拆卸地容纳在容纳槽中。 键盘的一侧设置有用于插入以对应于第一连接端口的第二连接端口。 键盘设置有用于向接收器发送无线信号的发射器和用于提供发射器的必要功率的电池模块。 通过第二连接端口和第一连接端口之间的相互插入和断开，可以切换有线和无线操作模式。

    CMOS device with raised source and drain regions
    8.
    发明申请
    CMOS device with raised source and drain regions 有权
    CMOS器件具有升高的源极和漏极区域

    公开(公告)号：US20080102573A1

    公开(公告)日：2008-05-01

    申请号：US11588920

    申请日：2006-10-27

    申请人： Chun-Sheng Liang ,  Hung-Ming Chen ,  Chien-Chao Huang ,  Fu-Liang Yang

    发明人： Chun-Sheng Liang ,  Hung-Ming Chen ,  Chien-Chao Huang ,  Fu-Liang Yang

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823814 ,  H01L27/092 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

    摘要： A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.

    摘要翻译： 形成半导体结构的方法包括形成PMOS器件和NMOS器件。 形成PMOS器件的步骤包括在半导体衬底上形成第一栅叠层; 在所述第一栅极堆叠的侧壁上形成第一偏移间隔物; 使用第一偏移间隔件作为掩模在半导体衬底中形成应力器; 并且在应激源上外延生长第一升高的源极/漏极延伸（LDD）区域。 形成NMOS器件的步骤包括在半导体衬底上形成第二栅极叠层; 在所述第二栅极堆叠的侧壁上形成第二偏移间隔物; 使用第二偏移间隔物作为掩模在半导体衬底上外延生长第二隆起的LDD区; 以及形成与第二凸起LDD区域相邻的深源极/漏极区域。

    METHOD OF FAST ANALOG LAYOUT MIGRATION
    9.
    发明申请
    METHOD OF FAST ANALOG LAYOUT MIGRATION 有权
    快速模拟布局移动的方法

    公开(公告)号：US20120304139A1

    公开(公告)日：2012-11-29

    申请号：US13476027

    申请日：2012-05-21

    申请人： Tung-Chieh Chen ,  Hung-Ming Chen ,  Yi-Peng Weng

    发明人： Tung-Chieh Chen ,  Hung-Ming Chen ,  Yi-Peng Weng

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081 ,  G06F17/5072 ,  G06F2217/06

    摘要： A method of fast analog layout migration from an original layout is disclosed. Various placement constraints, including topology, matching and symmetry are extracted from the schematic or netlist as well as the original layout. In addition, relative placement patterns are extracted from the original layout for matching and symmetry constraints. A constraint hierarchy tree can be built according to the constraints, and relative placement patterns are attached accordingly. By using the constraint hierarchy tree, multiple new placement results are efficiently explored that preserve the relative placement patterns for matching and symmetry constraints.

    摘要翻译： 公开了一种从原始布局进行快速模拟布局迁移的方法。 从原理图或网表以及原始布局中提取各种布局约束，包括拓扑，匹配和对称性。 此外，从原始布局中提取相对放置图案以进行匹配和对称约束。 可以根据约束构建约束层次树，并相应地附加相对布局模式。 通过使用约束层次树，有效地探索了多个新的布局结果，保留了匹配和对称约束的相对布局模式。