公开(公告)号：US06514673B2

公开(公告)日：2003-02-04

申请号：US09818962

申请日：2001-03-28

申请人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

发明人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

IPC分类号： G03F700

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/76224

摘要： A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This method derives from our observation of a linear relationship between the amount of material that needs to be removed in order to achieve full planarization and a quantity called “OD for CMP density”. The latter is defined as PA×(100−PS) where PA is the percentage of active area relative to the total wafer area and PS is the percentage of sub-areas relative to the total wafer area. The sub-areas are regions in the dielectric, above the active areas, that are etched out prior to CMP. Thus, once the materials have been characterized, the optimum CMP removal thickness is readily calculated for a wide range of different circuit implementations.

公开(公告)号：US06232043B1

公开(公告)日：2001-05-15

申请号：US09318471

申请日：1999-05-25

申请人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

发明人： Hway-Chi Lin ,  Yu-Ku Lin ,  Wen-Pin Chang ,  Ying-Lang Wang

IPC分类号： G03F700

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L21/76224

摘要： A simple method for calculating the optimum amount of HDP deposited material that needs to be removed during CMP (without introducing dishing) is described. This method derives from our observation of a linear relationship between the amount of material that needs to be removed in order to achieve full planarization and a quantity called “OD for CMP density”. The latter is defined as PA×(100−PS) where PA is the percentage of active area relative to the total wafer area and PS is the percentage of sub-areas relative to the total wafer area. The sub-areas are regions in the dielectric, above the active areas, that are etched out prior to CMP. Thus, once the materials have been characterized, the optimum CMP removal thickness is readily calculated for a wide range of different circuit implementations.

摘要翻译： 描述了一种用于计算在CMP期间需要去除的HDP沉积材料的最佳量的简单方法（不引入凹陷）。 该方法来源于我们观察到需要去除的材料的量之间的线性关系以实现完全平坦化，并且称为“用于CMP密度的OD”。 后者被定义为PAx（100-PS），其中PA是相对于总晶片面积的有效面积的百分比，PS是相对于总晶片面积的子区域的百分比。 子区域是在CMP之前被蚀刻出的有源区域之上的电介质区域。 因此，一旦材料被表征，就可以很容易地计算各种不同电路实现的最佳CMP去除厚度。

公开(公告)号：US20050116441A1

公开(公告)日：2005-06-02

申请号：US10724196

申请日：2003-12-01

申请人： Wen-Pin Chang

发明人： Wen-Pin Chang

IPC分类号： B62K15/00

CPC分类号： B62K15/00

摘要： A foldable bicycle includes a front fork, a head tube, a support tube, an adjusting member, two support levers, a rear fork, and a hydraulic cylinder. Thus, when the foldable bicycle is folded, the rear wheel is in parallel with the front wheel, so that the user can simultaneously draw the rear wheel and the front wheel to move easily and conveniently, thereby facilitating the user moving the folded bicycle. In addition, the foldable bicycle is folded easily and conveniently, thereby facilitating the user folding the bicycle.

摘要翻译： 可折叠自行车包括前叉，头管，支撑管，调节构件，两个支撑杆，后叉和液压缸。 因此，当可折叠自行车折叠时，后轮与前轮平行，使得使用者可以同时拉动后轮和前轮以容易且方便地移动，从而便于使用者移动折叠的自行车。 此外，可折叠自行车易于且方便地折叠，从而便于使用者折叠自行车。

公开(公告)号：USD352169S

公开(公告)日：1994-11-08

申请号：US6325

申请日：1993-03-26

申请人： Wen-Pin Chang

设计人： Wen-Pin Chang

公开(公告)号：US06365263B1

公开(公告)日：2002-04-02

申请号：US09433664

申请日：1999-11-04

申请人： Wen-Pin Chang

发明人： Wen-Pin Chang

IPC分类号： G03C173

CPC分类号： G03F7/40 ,  B32B3/02 ,  G03F7/0382 ,  Y10T428/24802 ,  Y10T428/3175 ,  Y10T428/31938

摘要： A method for forming a cross-linking photoresist layer is provided. The method includes steps of providing a photoresist layer; activating the photoresist layer with a light provided by a light source; and putting the photoresist layer in a vapor of a cross-linking agent to form the cross-linking photoresist layer.

摘要翻译： 提供了形成交联光致抗蚀剂层的方法。 该方法包括提供光致抗蚀剂层的步骤; 用光源提供的光激活光致抗蚀剂层; 并将光致抗蚀剂层置于交联剂的蒸气中以形成交联光致抗蚀剂层。

公开(公告)号：US06322953B1

公开(公告)日：2001-11-27

申请号：US09277369

申请日：1999-03-29

申请人： Wen-Pin Chang ,  Wen-Wha Lu

发明人： Wen-Pin Chang ,  Wen-Wha Lu

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/76224

摘要： A method of planarizing a photoresist coating for a semiconductor device having a plurality of trenches including providing a first layer of photoresist over the plurality of trenches wherein the layer has a thickness and the photoresist is a positive-type photoresist, exposing the first layer to light having a predetermined energy, developing the exposed first layer wherein a portion of the first layer remains within the plurality of trenches, and providing a second layer of photoresist over the developed first layer.

摘要翻译： 一种用于具有多个沟槽的半导体器件的光致抗蚀剂涂层的平面化方法，包括在多个沟槽上提供第一层光致抗蚀剂，其中所述层具有厚度，并且所述光致抗蚀剂是正型光致抗蚀剂，将第一层暴露于光 具有预定能量，显影所述暴露的第一层，其中所述第一层的一部分保留在所述多个沟槽内，以及在所述显影的第一层上提供第二层光致抗蚀剂。

公开(公告)号：US06245612B1

公开(公告)日：2001-06-12

申请号：US09533004

申请日：2000-03-22

申请人： Wen-Pin Chang ,  Ming-Lun Chang

发明人： Wen-Pin Chang ,  Ming-Lun Chang

IPC分类号： H01L218242

CPC分类号： H01L27/1087

摘要： The present invention provides a method for making the bottom electrode of a buried capacitor, which is characterized by protecting the non-bottom electrode region with a LPD oxide layer to prevent the impurities within the doped Si glass remaining in non-bottom electrode region from driving into the substrate during annealing, thus non-desired diffusing region connecting to the bottom electrode will be generated. Consequently, the leakage current existing in conventional buried capacitor will be effectively reduced according to the method of this present invention.

摘要翻译： 本发明提供了一种制造掩埋电容器的底部电极的方法，其特征在于用LPD氧化物层保护非底部电极区域，以防止留在非底部电极区域内的掺杂Si玻璃中的杂质驱动 在退火期间进入衬底，因此将产生连接到底部电极的非期望的扩散区域。 因此，根据本发明的方法，将有效地减少常规埋地电容器中存在的漏电流。

公开(公告)号：US06209413B1

公开(公告)日：2001-04-03

申请号：US09491656

申请日：2000-01-27

申请人： Wen-Pin Chang

发明人： Wen-Pin Chang

IPC分类号： B62K2304

CPC分类号： B62K23/04 ,  B62M25/04 ,  Y10T74/20287 ,  Y10T74/20438

摘要： A shifter on a handlebar for operating a derailleur cable of a bicycle derailleur mechanism includes an actuating ring connected to an end of the derailleur cable and received in a frame on the handlebar. A resilient plate extends tangentially from the actuating ring and is engaged with one of dents in the frame. A operation sleeve is mounted to a tube of the frame and connected to the actuating ring so that when rotating the operation sleeve, the actuating ring is rotated and the cable is pulled, while a distal end of the resilient plate is moveably and engaged with one of the dents to provide the rider a clear positioning feature of the gear changing.

摘要翻译： 用于操作自行车拨链器机构的拨链器电缆的手柄上的换档器包括连接到拨链器电缆的端部并被接收在车把上的框架中的致动环。 弹性板从致动环切向延伸并与框架中的凹槽中的一个接合。 操作套筒安装在框架的管子上，并连接到致动环上，使得当旋转操作套筒时，致动环被旋转并且电缆被拉动，同时弹性板的远端可移动地与一个 的凹痕为骑车人提供了一个清晰的定位功能的变速。

公开(公告)号：US06955373B2

公开(公告)日：2005-10-18

申请号：US10760282

申请日：2004-01-21

申请人： Wen-Pin Chang

发明人： Wen-Pin Chang

IPC分类号： B62K1/00 ,  B62K25/28 ,  B62K25/30

CPC分类号： B62K25/30 ,  B62K25/286

摘要： A shock-absorbing frame for a bicycle includes a first body, a middle body, a shock-absorbing device, a second body, and two holders. Thus, the middle body and the second body are rotated on the opposite directions, and the drive chain wheel and the driven chain wheel are moved upward and forward simultaneously, so that the distance between the drive chain wheel and the driven chain wheel is kept at a constant, thereby preventing the chain mounted between the drive chain wheel and the driven chain wheel from becoming loosened or detached, so that the chain is mounted between the drive chain wheel and the driven chain wheel rigidly and stably without detachment so as to protect the rider's safety.

摘要翻译： 用于自行车的减震框架包括第一主体，中间主体，减震装置，第二主体和两个支架。 因此，中部主体和第二主体在相反的方向上旋转，并且驱动链轮和从动链轮同时向上和向前移动，使得驱动链轮和从动链轮之间的距离保持在 从而防止驱动链轮与从动链轮之间的链条松动或脱落，从而使链条刚性且稳定地安装在驱动链轮和从动链轮之间而不脱离，从而保护 骑手的安全

公开(公告)号：US6107006A

公开(公告)日：2000-08-22

申请号：US270831

申请日：1999-03-18

申请人： Wen-Pin Chang

发明人： Wen-Pin Chang

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20

CPC分类号： G03F7/095 ,  G03F7/0045 ,  G03F7/092

摘要： Disclosed is a method for forming a pattern by which the T-top formation problem of chemically amplified resists is eliminated. Preferably, an i-line resist is employed as a barrier layer to protect the underlying chemically amplified resist from base attack. The i-line resist used herein can be exposed and developed by a normal deep-UV lithography process without substantially affecting the performance of chemically amplified resists.

摘要翻译： 公开了一种消除化学放大抗蚀剂的T顶形成问题的形成方法。 优选地，使用i线抗蚀剂作为阻挡层，以保护底层的化学放大抗蚀剂免受基底侵蚀。 本文使用的i线抗蚀剂可以通过普通的深UV光刻工艺曝光和显影，而基本上不影响化学放大抗蚀剂的性能。