Array substrate for liquid crystal display device and method of manufacturing the same
    1.
    发明授权
    Array substrate for liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US07847289B2

    公开(公告)日:2010-12-07

    申请号:US11646253

    申请日:2006-12-28

    IPC分类号: G02F1/133

    摘要: An array substrate for a liquid crystal display device includes a substrate, a gate line over the substrate, a data line crossing the gate line to define a pixel region and including a transparent conductive layer and an opaque conductive layer, a data pad at one end of the data line and including a transparent conductive layer, a thin film transistor connected to the gate line and the data line and including a gate electrode, an active layer, an ohmic contact layer, a buffer metallic layer, a source electrode and a drain electrode, and a pixel electrode in the pixel region and connected to the thin film transistor, the pixel electrode including a transparent conductive layer.

    摘要翻译: 液晶显示装置用阵列基板包括基板,基板上的栅极线,与栅极线交叉以限定像素区域并包括透明导电层和不透明导电层的数据线,一端的数据焊盘 的数据线,并且包括透明导电层,连接到栅极线和数据线的薄膜晶体管,并且包括栅电极,有源层,欧姆接触层,缓冲金属层,源电极和漏极 电极和像素电极,并且连接到薄膜晶体管,像素电极包括透明导电层。

    Array substrate for liquid crystal display device and method of manufacturing the same
    2.
    发明授权
    Array substrate for liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US08456601B2

    公开(公告)日:2013-06-04

    申请号:US13193384

    申请日:2011-07-28

    IPC分类号: G02F1/134363

    摘要: An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

    摘要翻译: 液晶显示装置用阵列基板包括基板,基板上的栅极线,包括栅极线的栅电极的薄膜晶体管,栅极上的栅极绝缘层,栅极绝缘层上的有源层 和有源层上的欧姆接触层,欧姆接触层上的源电极和漏电极,电连接到漏电极的像素电极,与源电极电连接并与栅极线交叉的数据线,间隔开的公共电极 从像素电极和直接在像素电极和公共电极之间直接在源电极和漏电极之间的钝化层。

    Array Substrate for Liquid Crystal Display Device and Method of Manufacturing the Same
    3.
    发明申请
    Array Substrate for Liquid Crystal Display Device and Method of Manufacturing the Same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US20110281386A1

    公开(公告)日:2011-11-17

    申请号:US13193384

    申请日:2011-07-28

    IPC分类号: H01L33/08

    摘要: An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

    摘要翻译: 液晶显示装置用阵列基板包括基板,基板上的栅极线,包括栅极线的栅电极的薄膜晶体管,栅极上的栅极绝缘层,栅极绝缘层上的有源层 和有源层上的欧姆接触层,欧姆接触层上的源电极和漏电极,电连接到漏电极的像素电极,与源电极电连接并与栅极线交叉的数据线,间隔开的公共电极 从像素电极和直接在像素电极和公共电极之间直接在源电极和漏电极之间的钝化层。

    Array substrate for liquid crystal display device and method of manufacturing the same
    4.
    发明授权
    Array substrate for liquid crystal display device and method of manufacturing the same 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US08031312B2

    公开(公告)日:2011-10-04

    申请号:US11806214

    申请日:2007-05-30

    IPC分类号: G02F1/1333

    摘要: An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a thin film transistor including a gate electrode of the gate line, a gate insulating layer over the gate electrode, an active layer on the gate insulating layer and ohmic contact layers on the active layer, and source and drain electrodes over the ohmic contact layers, a pixel electrode electrically connected to the drain electrode, a data line electrically connected to the source electrode and crossing the gate line, a common electrode spaced apart from the pixel electrode, and a passivation layer directly between the pixel electrode and the common electrode and directly between the source and drain electrodes.

    摘要翻译: 液晶显示装置用阵列基板包括基板,基板上的栅极线,包括栅极线的栅电极的薄膜晶体管,栅极上的栅极绝缘层,栅极绝缘层上的有源层 和有源层上的欧姆接触层,欧姆接触层上的源电极和漏电极,电连接到漏电极的像素电极,与源电极电连接并与栅极线交叉的数据线,间隔开的公共电极 从像素电极和直接在像素电极和公共电极之间直接在源电极和漏电极之间的钝化层。

    Array substrate including thin film transistor and method of fabricating the same
    8.
    发明授权
    Array substrate including thin film transistor and method of fabricating the same 有权
    阵列基板包括薄膜晶体管及其制造方法

    公开(公告)号:US08021937B2

    公开(公告)日:2011-09-20

    申请号:US12486453

    申请日:2009-06-17

    IPC分类号: H01L21/336

    摘要: A method of fabricating an array substrate includes: forming a gate line and a gate electrode connected to the gate line; forming a gate insulating layer on the gate line and the gate insulting layer; sequentially forming an intrinsic amorphous silicon pattern and an impurity-doped amorphous silicon pattern on the gate insulating layer over the gate electrode; forming a data line on the gate insulating layer and source and drain electrodes on the impurity-doped amorphous silicon pattern, the data line crossing the gate line to define a pixel region, and the source and drain electrodes spaced apart from each other; removing a portion of the impurity-doped amorphous silicon pattern exposed through the source and drain electrodes to define an ohmic contact layer; irradiating a first laser beam onto the intrinsic amorphous silicon pattern through the source and drain electrode to form an active layer including a first portion of polycrystalline silicon and a second portion of amorphous silicon at both sides of the first portion; forming a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer in the pixel region, the pixel electrode connected to the drain electrode through the drain contact hole.

    摘要翻译: 制造阵列基板的方法包括:形成栅极线和连接到栅极线的栅电极; 在栅极线和栅极绝缘层上形成栅极绝缘层; 在栅电极上的栅极绝缘层上依次形成本征非晶硅图案和杂质掺杂非晶硅图案; 在栅极绝缘层上形成数据线,在掺杂杂质的非晶硅图案上的源电极和漏极之间形成数据线,该数据线与栅极线交叉以限定一个像素区域,以及源极和漏极彼此间隔开; 去除通过源极和漏极暴露的杂质掺杂非晶硅图案的一部分,以限定欧姆接触层; 通过源极和漏极将第一激光束照射到本征非晶硅图案上,以在第一部分的两侧形成包括多晶硅的第一部分和非晶硅的第二部分的有源层; 在数据线上形成钝化层,源电极和漏电极,钝化层具有暴露漏电极的漏极接触孔; 以及在所述像素区域中的钝化层上形成像素电极,所述像素电极通过所述漏极接触孔与所述漏电极连接。

    Method of fabricating array substrate
    9.
    发明授权
    Method of fabricating array substrate 有权
    阵列基板的制作方法

    公开(公告)号:US07910414B2

    公开(公告)日:2011-03-22

    申请号:US12591501

    申请日:2009-11-20

    IPC分类号: H01L21/00 H01L21/84

    摘要: A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.

    摘要翻译: 制造阵列基板的方法包括在基板上依次形成第一金属层,第一无机绝缘层和本征非晶硅层,所述第一金属层包括第一金属材料层和第二金属材料层; 结晶本征非晶硅; 形成栅电极,栅极线,栅绝缘层和有源层; 形成包括分别暴露有源层的两侧的第一和第二接触孔的层间绝缘层; 形成分别接触有源层的两侧的第一和第二欧姆接触图案,源电极,漏电极和连接源电极的数据线; 在源极上形成钝化层,漏电极; 以及在所述钝化层上形成像素电极并与所述漏电极接触。

    MONOCHROME LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    MONOCHROME LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    单色发光显示装置及其制造方法

    公开(公告)号:US20110032277A1

    公开(公告)日:2011-02-10

    申请号:US12646256

    申请日:2009-12-23

    IPC分类号: G06F3/038 G09G5/10 H01J9/00

    摘要: A monochrome light emitting display device and a method for fabricating the same are disclosed, in which a pixel structure of a monochrome light emitting display device is changed to improve a contrast ratio and resolution and at the same time color shift is prevented from occurring, so as to display clearer image. The monochrome light emitting display device comprises a display panel having unit pixels of first and second sub-pixels arranged in a matrix arrangement to display a monochrome image; gate and data drivers respectively driving gate lines and data lines of the display panel; and a timing controller aligning externally input RGB data to be suitable for driving of the display panel to supply the RGB data to the data driver and generating data and gate control signals to control the data and gate drivers.

    摘要翻译: 公开了一种单色发光显示装置及其制造方法,其中改变单色发光显示装置的像素结构以提高对比度和分辨率,并且同时防止发生色偏。 以显示更清晰的图像。 单色发光显示装置包括:显示面板,具有排列成矩阵排列的第一和第二子像素的单位像素,以显示单色图像; 门和数据驱动器分别驱动显示面板的门线和数据线; 以及定时控制器,用于对准外部输入RGB数据以适于驱动显示面板,以将RGB数据提供给数据驱动器,并产生数据和门控制信号以控制数据和门驱动器。