-
1.发明申请METHOD OF FORMING A MASK PATTERN, METHOD OF FORMING A MINUTE PATTERN, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权形成掩模图案的方法，形成分钟图案的方法和使用其制造半导体器件的方法公开(公告)号：US20110053362A1
公开(公告)日：2011-03-03
申请号：US12873574
申请日：2010-09-01
申请人： Hyoung-Hee KIM , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
发明人： Hyoung-Hee KIM , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
CPC分类号： H01L21/28123 , H01L21/76229 , H01L27/11526 , H01L27/11529
摘要： A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.
摘要翻译： 形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法，所述掩模图案的形成方法包括在基板上形成第一掩模图案; 在第一掩模图案上形成第一初步封盖层; 向第一初步封盖图案照射能量以形成与第一掩模图案离子键合的第二初步封盖层; 向第二初步封盖层施加酸以形成封盖层; 在所述封盖层之间形成第二掩模层，所述第二掩模层的溶解度低于所述封盖层的溶解度; 并去除覆盖层以形成第二掩模图案。
-
2.发明授权Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same 有权形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法公开(公告)号：US08227349B2
公开(公告)日：2012-07-24
申请号：US12873574
申请日：2010-09-01
申请人： Hyoung-Hee Kim , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
发明人： Hyoung-Hee Kim , Yool Kang , Seong-Ho Moon , Seok-Hwan Oh , So-Ra Han , Seong-Woon Choi
IPC分类号： H01L21/461 , H01L21/302 , H01L21/469 , H01L21/3205
CPC分类号： H01L21/28123 , H01L21/76229 , H01L27/11526 , H01L27/11529
摘要： A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.
摘要翻译： 形成掩模图案的方法，形成微小图案的方法以及使用其形成半导体器件的方法，所述掩模图案的形成方法包括在基板上形成第一掩模图案; 在第一掩模图案上形成第一初步封盖层; 向第一初步封盖图案照射能量以形成与第一掩模图案离子键合的第二初步封盖层; 向第二初步封盖层施加酸以形成封盖层; 在所述封盖层之间形成第二掩模层，所述第二掩模层的溶解度低于所述封盖层的溶解度; 并去除覆盖层以形成第二掩模图案。
-
公开(公告)号：US07527901B2
公开(公告)日：2009-05-05
申请号：US11177434
申请日：2005-07-11
申请人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
发明人： Jeong-Yun Lee , Seong-Woon Choi , Il-Yong Jang , Won-Suk Ahn , Sung-Jae Han
IPC分类号： G03F1/00
摘要： A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.
摘要翻译： 修复相移掩模的方法包括暴露掩模的相移图案的上表面和侧表面，在曝光的相移图案的表面上选择性地形成钝化层，然后清洁其上钝化层 形成。 相移掩模的修复在一系列光刻曝光工艺中进行，其中使用相移掩模将图像转印到光致抗蚀剂层或层。 在光掩模被清洁之后，确定相移图案的透射率是否高于阈值。
-
4.发明申请Method of inspecting defects in photomask having a plurality of dies with different transmittances 审中-公开检查具有不同透射率的多个管芯的光掩模中的缺陷的方法公开(公告)号：US20060269118A1
公开(公告)日：2006-11-30
申请号：US11369576
申请日：2006-03-07
申请人： Myoung-Soo Lee , Seong-Woon Choi
发明人： Myoung-Soo Lee , Seong-Woon Choi
IPC分类号： G06K9/00
CPC分类号： G03F1/84
摘要： Provided is a method of inspecting defects in a photomask having dies with different transmittances from each other due to correction treatments. A method of inspecting defects corrects light signals transmitted through the dies or source light irradiating the dies by using transmittance maps of the dies.
摘要翻译： 提供了通过校正处理来检查具有彼此具有不同透射率的管芯的光掩模中的缺陷的方法。 检查缺陷的方法通过使用模具的透射率图来校正通过模具传输的光信号或照射模具的源光。
-
5.发明授权Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare 有权用于测量火炬的掩模，制造掩模的方法，识别晶片上的闪光影响区域的方法以及设计新的掩模以校正闪光的方法公开(公告)号：US07393615B2
公开(公告)日：2008-07-01
申请号：US10974950
申请日：2004-10-28
申请人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
发明人： Won-Tai Ki , Seong-Woon Choi , Tae-Moon Jeong , Shun-Yong Zinn , Woo-Sung Han , Jung-Min Sohn
CPC分类号： G03F7/70591 , G03F1/44 , G03F1/70 , G03F7/70941
摘要： A mask for use in measuring flare produced by a projection lens of a photolithography system, a method of manufacturing the mask, a method of identifying a flare-affected region on a wafer, and a method for correcting for the flare to produce photoresist patterns of desired line widths are provided. A first photolithographic process is performed to form photoresist patterns on a test wafer using a mask including a light shielding region having a plurality of light transmission patterns and a light transmission region, and the photoresist patterns formed by light passing through the light transmission patterns of the light shielding region are compared to the photoresist patterns formed by light passing through the light transmission region. The amount of flare produced by the projection lens is quantified using the results of the comparison, and thus it is possible to identify a flare-affected region on the wafer. In addition, it is possible to form uniform photoresist patterns on the wafer by determining the open ratio of the flare-affected region and calculating an effective amount of the flare in the flare-affected region from the amount of flare of the lens and the open ratio. More specifically, a mask is produced in which the line widths of mask patterns are configured, i.e., corrected compared to the first mask, taking into consideration the effective amount of the flare.
摘要翻译： 用于测量由光刻系统的投影透镜产生的闪光的掩模，掩模的制造方法，识别晶片上的火炬区域的方法，以及用于校正光斑以产生光致抗蚀剂图案的方法 提供所需的线宽。 执行第一光刻工艺以使用包括具有多个透光图案和光透射区域的遮光区域的掩模在测试晶片上形成光致抗蚀剂图案，并且由穿过光传输图案的光形成的光致抗蚀剂图案 将光屏蔽区域与通过光透射区域的光形成的光致抗蚀剂图案进行比较。 使用比较结果来量化由投影透镜产生的闪光量，因此可以识别晶片上的闪光影响区域。 此外，可以通过确定闪光影响区域的开放比率并且从透镜的闪光量和开口的量来计算火炬影响区域中的闪光的有效量，从而在晶片上形成均匀的光致抗蚀剂图案 比。 更具体地，考虑到闪光灯的有效量，产生掩模图案的线宽被配置的掩模，即与第一掩模相比校正的掩模。
-
6.发明授权Methods, systems and computer program products for correcting photomask using aerial images and boundary regions 失效用于使用航空图像和边界区域校正光掩模的方法，系统和计算机程序产品公开(公告)号：US07389491B2
公开(公告)日：2008-06-17
申请号：US11268791
申请日：2005-11-08
申请人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
发明人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
CPC分类号： G03F1/84
摘要： A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.
摘要翻译： 校正方法及其系统自动执行光掩模关键尺寸（CD）的测量和分析，以满足期望的CD均匀性和期望的平均对目标（MTT）数据。 可以执行对发生CD错误的部分的校正。
-
7.发明申请Methods, systems and computer program products for correcting photomask using aerial images and boundary regions 失效用于使用航空图像和边界区域校正光掩模的方法，系统和计算机程序产品公开(公告)号：US20060204862A1
公开(公告)日：2006-09-14
申请号：US11268791
申请日：2005-11-08
申请人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
发明人： Ji-Soong Park , Sung-Min Huh , Seong-Woon Choi , In-Kyun Shin
CPC分类号： G03F1/84
摘要： A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.
摘要翻译： 校正方法及其系统自动执行光掩模关键尺寸（CD）的测量和分析，以满足期望的CD均匀性和期望的平均对目标（MTT）数据。 可以执行对发生CD错误的部分的校正。
-
8.发明授权Methods for forming pattern using electron beam and cell masks used in electron beam lithography 有权在电子束光刻中使用的电子束和细胞掩模形成图案的方法公开(公告)号：US07736838B2
公开(公告)日：2010-06-15
申请号：US11590878
申请日：2006-11-01
申请人： Hee-Bom Kim , Seong-Woon Choi
发明人： Hee-Bom Kim , Seong-Woon Choi
IPC分类号： G03C5/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/78 , H01J37/3174 , Y10S430/143
摘要： Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.
摘要翻译： 提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。 所述方法可以包括在衬底上形成抗蚀剂层，抗蚀剂层包括第一区域，围绕第一区域的第二区域和围绕第二区域的第三区域。 可以以第一剂量用电子束照射第二区域，并且可以以小于第一剂量的第二剂量用电子束照射第三区域。 细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。 透射区域可以从屏蔽区域延伸一段距离。 灰色图案区域可以设置在发送区域周围。 灰色图案区域可以包括具有小于分辨率限制的间距的图案。
-
9.发明申请System and method for measuring dimension of patterns formed on photomask 失效用于测量在光掩模上形成的图案的尺寸的系统和方法公开(公告)号：US20060066878A1
公开(公告)日：2006-03-30
申请号：US11151742
申请日：2005-06-13
IPC分类号： G01B11/04
摘要： A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.
摘要翻译： 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，其上放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。
-
10.发明申请公开(公告)号：US20060051684A1
公开(公告)日：2006-03-09
申请号：US11145985
申请日：2005-06-07
CPC分类号： G03F1/36
摘要： A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.
-
-
-
-
-
-
-
-
-
搜索结果
20 条记录 (耗时 0.031 秒)