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公开(公告)号：US07608901B2
公开(公告)日：2009-10-27
申请号：US11777228
申请日：2007-07-12
申请人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
IPC分类号： H01L29/72
CPC分类号： H01L29/66984 , G11C11/16 , H01L29/0843 , Y10S257/902 , Y10S977/933
摘要： Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.
摘要翻译： 本文公开了一种自旋晶体管，包括：其中形成有沟道层的半导体衬底; 第一和第二电极，沿着沟道层的纵向以预定的距离形成在衬底上彼此间隔开; 源极和漏极，其包括磁化铁磁材料，并且沿着沟道层的纵向方向以预定的距离在第一电极和第二电极之间彼此间隔开形成间隔开的源极和漏极; 以及形成在源极和漏极之间的衬底上的栅极，并且调节通过沟道层的电子的自旋取向，其中通过沟道层的电子通过杂散在源的较低侧自旋对准 源极的磁场，并通过漏极的杂散场在漏极的下侧进行自旋滤波。
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公开(公告)号：US20080169492A1
公开(公告)日：2008-07-17
申请号：US11777228
申请日：2007-07-12
申请人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Jong Hwa Eom , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/66984 , G11C11/16 , H01L29/0843 , Y10S257/902 , Y10S977/933
摘要： Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on the substrate at a predetermined distance along a longitudinal direction of the channel layer; a source and drain which include magnetized ferromagnetic materials and are formed to be spaced apart form each other between the first electrode and the second electrode at a predetermined distance along the longitudinal direction of the channel layer; and a gate which is formed on the substrate between the source and the drain, and adjusts spin orientations of electrons passing through the channel layer, wherein the electrons passing through the channel layer are spin-aligned at a lower side of the source by a stray magnetic field of the source and spin-filtered at a lower side of the drain by a stray field of the drain.
摘要翻译： 本文公开了一种自旋晶体管，包括：其中形成有沟道层的半导体衬底; 第一和第二电极，沿着沟道层的纵向以预定的距离形成在衬底上彼此间隔开; 源极和漏极，其包括磁化铁磁材料，并且沿着沟道层的纵向方向以预定的距离在第一电极和第二电极之间彼此间隔开形成间隔开的源极和漏极; 以及形成在源极和漏极之间的衬底上的栅极，并且调节通过沟道层的电子的自旋取向，其中通过沟道层的电子通过杂散在源的较低侧自旋对准 源极的磁场，并通过漏极的杂散场在漏极的下侧进行自旋滤波。
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公开(公告)号：US07307299B2
公开(公告)日：2007-12-11
申请号：US11305500
申请日：2005-12-15
申请人： Hyun Cheol Koo , Suk Hee Han , Jong Hwa Eom , Joon Yeon Chang , Hyun Jung Yi
发明人： Hyun Cheol Koo , Suk Hee Han , Jong Hwa Eom , Joon Yeon Chang , Hyun Jung Yi
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66984 , H01F1/404 , H01F10/193 , H01L29/0843 , H01L29/772
摘要： A spin transistor having wide ON/OFF operation margin and producing less noise is provided. The spin transistor includes a substrate having a channel, a source, a drain and a gate formed on the substrate. The source and the drain are formed to have magnetization directions perpendicular to the length direction of the channel. The ON/OFF operations of the spin transistor can be controlled by generating a spin-orbit coupling induced magnetic field to have a direction parallel or anti-parallel to the magnetization directions of the source and the drain.
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公开(公告)号：US08421060B2
公开(公告)日：2013-04-16
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译： 逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。 输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。
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公开(公告)号：US20110279146A1
公开(公告)日：2011-11-17
申请号：US12899778
申请日：2010-10-07
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
IPC分类号： H03K19/091
CPC分类号： H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18
摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.
摘要翻译： 提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极 电极连接到公共输入端子。
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公开(公告)号：US20110042648A1
公开(公告)日：2011-02-24
申请号：US12684586
申请日：2010-01-08
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jang Hae Ku
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L29/0665 , H01L29/1606 , H01L29/7783
摘要： A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.
摘要翻译： 逻辑器件包括：具有沟道层的衬底; 铁磁材料的两个输入端子图案形成在基板上并且沿着沟道层的纵向方向彼此间隔开，以便用作逻辑门的输入端; 以及形成在所述基板上并且设置在所述两个输入端子图案之间以用作所述逻辑门的输出端子的铁磁材料的输出端子图案。 输出端子图案通过使用从输入端子图案注入到沟道层中的电子自旋的自旋累积和扩散来读取输出电压。
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7.发明授权Magnetic memory device and method for reading magnetic memory cell using spin hall effect 有权磁记忆装置及使用旋转厅效应读磁记忆体的方法公开(公告)号：US07839675B2
公开(公告)日：2010-11-23
申请号：US12360964
申请日：2009-01-28
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim
CPC分类号： H01L43/065 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/226 , H01L29/66462 , H01L29/7781
摘要： A magnetic memory device includes a substrate for reading and a magnetic memory cell. The substrate has a channel layer. The magnetic memory cell is formed on the substrate and has a magnetized magnetic material that transfers spin data to electrons passing the channel layer. Data stored in the magnetic memory cell are read by a voltage across both side ends of the channel layer that is generated when the electrons passing the channel layer deviate in the widthwise direction of the channel layer by a spin Hall effect.
摘要翻译： 磁存储器件包括用于读取的衬底和磁存储单元。 衬底具有通道层。 磁性存储单元形成在基板上，并具有将自旋数据传送到通过沟道层的电子的磁化磁性材料。 存储在磁存储单元中的数据被通过通道沟道层的电子通过沟道层的宽度方向偏离旋转霍尔效应而产生的沟道层的两侧端的电压读取。
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公开(公告)号：US08125247B2
公开(公告)日：2012-02-28
申请号：US12899778
申请日：2010-10-07
申请人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
发明人： Hyun Cheol Koo , Suk Hee Han , Joon Yeon Chang , Hyung Jun Kim , Jun Woo Choi
IPC分类号： H03K19/091 , H01L21/02
CPC分类号： H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18
摘要： There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal.
摘要翻译： 提供了一种互补自旋晶体管逻辑电路，包括：并联自旋晶体管，其包括磁化的第一源，与第一源的磁化方向平行磁化的第一漏极，第一沟道层和第一栅电极; 以及反并联自旋晶体管，其包括磁化的第二源极，与所述第二源极的磁化方向反并联的第二漏极，第二沟道层和第二栅电极，其中所述第一栅电极和所述第二栅极 电极连接到公共输入端子。
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公开(公告)号：US08058676B2
公开(公告)日：2011-11-15
申请号：US12342426
申请日：2008-12-23
申请人： Hyung Jun Kim , Hyun Cheol Koo , Joon Yeon Chang , Suk Hee Han , Kyung Ho Kim
发明人： Hyung Jun Kim , Hyun Cheol Koo , Joon Yeon Chang , Suk Hee Han , Kyung Ho Kim
IPC分类号： H01L29/76
CPC分类号： H01L29/66984 , H01L29/7785
摘要： A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.
摘要翻译： 自旋晶体管包括：半导体衬底，包括具有二维电子气体结构的沟道层和分别设置在沟道层的上侧和下侧的上和下包层; 形成在所述半导体衬底上并且彼此间隔开的铁磁源极和漏极; 栅电极，设置在源电极和漏电极之间并且施加栅极电压以控制通过沟道层的电子的自旋; 第一载流子供给层，设置在所述下包层和所述沟道层之间，以向所述沟道层提供载流子; 以及第二载体供给层，其设置在所述上包层和所述沟道层之间，以将载流子供应到所述沟道层。
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公开(公告)号：US20100084633A1
公开(公告)日：2010-04-08
申请号：US12342426
申请日：2008-12-23
申请人： Hyung Jun Kim , Hyun Cheol Koo , Joon Yeon Chang , Suk Hee Han , Kyung Ho Kim
发明人： Hyung Jun Kim , Hyun Cheol Koo , Joon Yeon Chang , Suk Hee Han , Kyung Ho Kim
IPC分类号： H01L29/66
CPC分类号： H01L29/66984 , H01L29/7785
摘要： A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer.
摘要翻译： 自旋晶体管包括：半导体衬底，包括具有二维电子气体结构的沟道层和分别设置在沟道层的上侧和下侧的上和下包层; 形成在所述半导体衬底上并且彼此间隔开的铁磁源极和漏极; 栅电极，设置在源电极和漏电极之间并且施加栅极电压以控制通过沟道层的电子的自旋; 第一载流子供给层，设置在所述下包层和所述沟道层之间，以向所述沟道层提供载流子; 以及第二载体供给层，其设置在所述上包层和所述沟道层之间，以将载流子供应到所述沟道层。
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