PHOTO-INDUCED METAL-INSULATOR-TRANSITION MATERIAL COMPLEX FOR SOLAR CELL, SOLAR CELL AND SOLAR CELL MODULE COMPRISING THE SAME
    1.
    发明申请
    PHOTO-INDUCED METAL-INSULATOR-TRANSITION MATERIAL COMPLEX FOR SOLAR CELL, SOLAR CELL AND SOLAR CELL MODULE COMPRISING THE SAME 审中-公开
    用于太阳能电池,太阳能电池和包含其的太阳能电池模块的光诱导金属绝缘体 - 过渡材料复合材料

    公开(公告)号:US20100071751A1

    公开(公告)日:2010-03-25

    申请号:US12564839

    申请日:2009-09-22

    IPC分类号: H01L31/042 H01L31/00

    摘要: Provided are a photo-induced metal-insulator-transition (MIT) material complex for a solar cell which can be used to manufacture highly efficient solar cells with more carriers than an impurity solar cell, and a solar cell including the MIT material complex, and a solar cell module. The solar cell includes: a substrate; a lower electrode formed on the substrate; a photo-induced MIT material complex formed on the lower electrode, wherein electrons and holes are formed when light is incident on n-type and p-type metal conductors that are bonded to each other, and the electrons and holes in an intrinsic energy level or gap become carriers, and a potential difference is generated; an anti-reflection layer formed on the MIT material complex; and an upper electrode that is formed to pass through the anti-reflection layer and to contact the MIT material complex. The n-type and p-type metal conductors are MIT materials which are insulators (or semiconductors) that have a metallic electronic structure at room temperature and also intrinsic energy levels, and an odd number of electrons or holes are in their outermost electron shell of the metallic electronic structure of the MIT materials. When an intrinsic energy level of the solar cell is broken, a greater number of carriers are induced than the number of carriers induced from an impurity level of a semiconductor. Accordingly, the solar cell has more carriers than carriers induced from an impurity level of a semiconductor solar cell.

    摘要翻译: 提供了一种用于太阳能电池的光致金属 - 绝缘体转变(MIT)材料复合体,其可用于制造具有比杂质太阳能电池更多载体的高效太阳能电池,以及包括MIT材料复合物的太阳能电池,以及 一个太阳能电池组件。 太阳能电池包括:基板; 形成在所述基板上的下电极; 形成在下电极上的光致MIT材料复合体,其中当光入射到彼此结合的n型和p型金属导体上时形成电子和空穴,并且具有固有能级的电子和空穴 或间隙成为载流子,产生电位差; 形成在MIT材料复合体上的抗反射层; 以及形成为穿过抗反射层并与MIT材料复合体接触的上电极。 n型和p型金属导体是MIT材料,它们是在室温下具有金属电子结构并且还具有固有能级的绝缘体(或半导体),并且奇数数量的电子或空穴在其最外面的电子壳中 MIT材料的金属电子结构。 当太阳能电池的固有能级被破坏时,与从半导体的杂质水平引起的载流子数相比,引起更多的载流子。 因此,太阳能电池具有比由半导体太阳能电池的杂质水平诱发的载流子更多的载流子。

    ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT
    2.
    发明申请
    ABRUPT METAL-INSULATOR TRANSITION DEVICE, CIRCUIT FOR REMOVING HIGH-VOLTAGE NOISE USING THE ABRUPT METAL-INSULATOR TRANSITION DEVICE, AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT 有权
    用于使用破坏金属绝缘体过渡装置以及包括电路的电气和/或电子系统来消除高压噪声的电路的绝缘金属绝缘体过渡装置

    公开(公告)号:US20080142900A1

    公开(公告)日:2008-06-19

    申请号:US12021764

    申请日:2008-01-29

    IPC分类号: H01L29/76

    CPC分类号: H01L49/003

    摘要: Provided are an abrupt metal-insulator transition (MIT) device for bypassing super-high voltage noise to protect an electric and/or electronic system, such as, a high-voltage switch, from a super-high voltage, a high-voltage noise removing circuit for bypassing the super-high voltage noise using the abrupt MIT device, and an electric and/or electronic system including the high-voltage noise removing circuit. The abrupt MIT device includes a substrate, a first abrupt MIT structure, and a second abrupt MIT structure. The first and second abrupt MIT structures are formed on an upper surface and a lower surface, respectively, of the substrate. The high-voltage noise removing circuit includes an abrupt MIT device chain connected in parallel to the electric and/or electronic system to be protected. The abrupt MIT device chain includes at least two abrupt MIT devices serially connected to each other.

    摘要翻译: 提供了用于绕过超高压噪声以保护诸如高压开关的电和/或电子系统的突发金属 - 绝缘体转变(MIT)装置,从超高电压,高压噪声 使用突发MIT装置绕过超高压噪声的除电路,以及包括高压噪声去除电路的电气和/或电子系统。 突变MIT装置包括基板,第一突发MIT结构和第二突发MIT结构。 第一和第二突变MIT结构分别形成在基板的上表面和下表面上。 高电压噪声去除电路包括与要保护的电和/或电子系统并联连接的突变MIT装置链。 突发MIT设备链包括彼此串行连接的至少两个突发MIT设备。

    HOLOGRAPHIC DISPLAYS WITH HIGH RESOLUTION
    4.
    发明申请
    HOLOGRAPHIC DISPLAYS WITH HIGH RESOLUTION 审中-公开
    全高清显示屏

    公开(公告)号:US20120019883A1

    公开(公告)日:2012-01-26

    申请号:US13190415

    申请日:2011-07-25

    IPC分类号: G03H1/12

    摘要: Provided is a holographic display that realizes a high-resolution three-dimensional (3D) image as a spatial light modulation panel system having a fast response time and enabling the formation of high-density pixels is developed. The holographic display includes, a spatial light modulator using a polymer thin film or a dielectric thin film that enable the formation of high-density pixels and has a fast response time, a fine displacement panel system sequentially moving the spatial light modulator in synchronization with a hologram fringe signal, and an optical system including a coherent light source, a spatial light modulation panel system, and an optical element that are efficiently disposed. The holographic display has a feature that realizes a high-resolution 3D image in a scheme that integrates and displays an image while sequentially moving a spatial light modulator simply or overlaps a hologram fringe pattern.

    摘要翻译: 提供了一种实现高分辨率三维(3D)图像作为具有快速响应时间并且能够形成高密度像素的空间光调制面板系统的全息显示器。 全息显示器包括使用能够形成高密度像素并且具有快速响应时间的聚合物薄膜或电介质薄膜的空间光调制器,精细位移面板系统顺序地将空间光调制器与 全息图条纹信号,以及包括相干光源,空间光调制面板系统和有效设置的光学元件的光学系统。 该全息显示器具有以下方案实现高分辨率3D图像的特征:在顺序地移动空间光调制器或者重叠全息条纹图案的同时集成和显示图像的方案。