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公开(公告)号：US20170216948A1
公开(公告)日：2017-08-03
申请号：US15213840
申请日：2016-07-19
发明人： Sung Won Park , Ki Young Jang , Hyun Koo Lee , Sung Min Park , Woo Yong Jeon , Jeong Min Son , Moo Soo Jeong , Mun Ki Ko
CPC分类号： B23K3/085 , B23K1/0016 , B23K3/087 , H01L2224/33
摘要： A soldering jig for double-faced cooling power modules is provided. The soldering jig prevents thermal deformation of a substrate during a soldering process. The soldering jig is used to fix the position of an upper substrate and a lower substrate when a semiconductor chip is disposed and soldered between the upper and lower substrates. The soldering jig includes a lower jig plate that is disposed under the lower substrate and fixes the position of lower substrate, an upper jig plate that is disposed over the upper substrate and compresses the upper substrate toward the lower substrate. Additionally, a connector which couples the lower jig plate and the upper jig plate, and an insert is installed on the connector and is disposed between the upper substrate and the lower substrate to maintain a constant distance between the upper substrate and the lower substrate during a soldering process.
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公开(公告)号：US20210183795A1
公开(公告)日：2021-06-17
申请号：US16991293
申请日：2020-08-12
发明人： Hyun Koo Lee , Sung Won Park , Jun Hee Park , Hyeon Uk Kim
IPC分类号： H01L23/64 , H01L23/00 , H01L23/31 , H01L23/373 , H01L23/495 , H01L21/48 , H01L21/56
摘要： A power module includes a substrate having a dielectric layer, a first power semiconductor device disposed on an upper part of the substrate, and a second power semiconductor device disposed on a lower part of the substrate.
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公开(公告)号：US10032689B2
公开(公告)日：2018-07-24
申请号：US15377768
申请日：2016-12-13
发明人： Woo Yong Jeon , Hyun Koo Lee , Sung Min Park , Ki Young Jang
IPC分类号： H01L23/367 , H01L23/538 , H01L25/065 , H01L25/07 , H01L25/00
摘要： Disclosed herein are a double-side cooling type power module and a producing method thereof. The double-side cooling type power module includes a pair of semiconductor chips disposed between an upper substrate and a lower substrate. The double-side cooling type power module includes output terminal leads configured to be disposed on a lower surface of the upper substrate and each connected to the pair of semiconductor chips, respectively; a plus terminal lead configured to be disposed at one side of an upper surface of the lower substrate to be connected to any one semiconductor chip selected from the pair of semiconductor chips; and a minus terminal lead configured to be disposed at the other side of the upper surface of the lower substrate to be connected to the other semiconductor chip of the pair of semiconductor chips.
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公开(公告)号：US20240322731A1
公开(公告)日：2024-09-26
申请号：US18733631
申请日：2024-06-04
发明人： Myung Ill You , Hyun Koo Lee
摘要： An embodiment provides a power module that includes a first substrate comprising first material, a plurality of first switching elements on the first substrate, a second substrate comprising second material having a lower thermal conductivity than the first material, a plurality of second switching elements and a third switching element on the second substrate, and a connection spacer configured to electrically connect the first substrate and the second substrate.
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公开(公告)号：US20180102301A1
公开(公告)日：2018-04-12
申请号：US15377768
申请日：2016-12-13
发明人： Woo Yong Jeon , Hyun Koo Lee , Sung Min Park , Ki Young Jang
IPC分类号： H01L23/367 , H01L25/065 , H01L23/538 , H01L25/00
CPC分类号： H01L23/3675 , H01L23/3735 , H01L23/5386 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/0655 , H01L25/072 , H01L25/50 , H01L2224/29139 , H01L2224/32225 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/48247 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/19107 , H01L2224/45099 , H01L2924/00012 , H01L2924/0105 , H01L2924/00
摘要： Disclosed herein are a double-side cooling type power module and a producing method thereof. The double-side cooling type power module includes a pair of semiconductor chips disposed between an upper substrate and a lower substrate. The double-side cooling type power module includes output terminal leads configured to be disposed on a lower surface of the upper substrate and each connected to the pair of semiconductor chips, respectively; a plus terminal lead configured to be disposed at one side of an upper surface of the lower substrate to be connected to any one semiconductor chip selected from the pair of semiconductor chips; and a minus terminal lead configured to be disposed at the other side of the upper surface of the lower substrate to be connected to the other semiconductor chip of the pair of semiconductor chips.
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公开(公告)号：US09872387B1
公开(公告)日：2018-01-16
申请号：US15612935
申请日：2017-06-02
发明人： Hyun Koo Lee , Woo Yong Jeon , Ki Young Jang
CPC分类号： H05K1/11 , H01L2224/48247 , H02M7/003 , H05K1/0203 , H05K1/0263 , H05K2201/10166
摘要： An input terminal of a power module of double-side cooling includes: a plus plate which is divided into a plurality of first terminal areas coupled with any one or more of the plurality of semiconductor chips and is connected with an anode of a battery, wherein a first bridge area connects the plurality of first terminal areas with each other; a minus plate which is divided into a plurality of second terminal areas coupled with any one or more of the plurality of semiconductor chips which are not coupled with the plus plate and is connected with a cathode of the battery, wherein a second bridge area connects the plurality of second terminal areas with each other and is disposed adjacent to the first bridge area; and a separator which is made of an insulation material and disposed between the plus plate and the minus plate.
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公开(公告)号：US20230369195A1
公开(公告)日：2023-11-16
申请号：US17948332
申请日：2022-09-20
发明人： Hyeon Uk Kim , Hyun Koo Lee , Jun Hee Park
IPC分类号： H01L23/498 , H01L23/00 , H01L21/48
CPC分类号： H01L23/49844 , H01L24/48 , H01L24/32 , H01L24/73 , H01L23/49833 , H01L23/49861 , H01L23/49811 , H01L24/40 , H01L21/4839 , H01L21/4825 , H01L2924/381 , H01L2224/73215 , H01L2224/73265 , H01L2224/32225 , H01L2224/48155 , H01L2224/73263 , H01L2224/73213 , H01L2224/40155
摘要： Disclosed are a power module and a method for manufacturing the same. A power module according to an embodiment of the present disclosure includes: a first substrate; a second substrate disposed spaced apart from the first substrate and including at least one metal layer; at least one chip disposed between the first substrate and the second substrate and in electrical contact with the metal layer; and a third substrate configured to be disposed spaced apart from the first substrate and the second substrate, electrically connect the chip and at least one external input terminal, include one or more conductive patterns each of which is connected to one of the at least one lead frame, and be formed in a multi-layer structure such that the one or more conductive patterns are not short-circuited to each other.
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公开(公告)号：US11373924B2
公开(公告)日：2022-06-28
申请号：US16200501
申请日：2018-11-26
发明人： Jun Hee Park , Hyun Koo Lee
IPC分类号： H01L23/373 , H01L23/367 , H01L23/498 , H01L23/495 , H01L25/07 , H05K7/20 , H05K1/02 , H01L23/00 , H01L25/18
摘要： Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.
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公开(公告)号：US11227845B2
公开(公告)日：2022-01-18
申请号：US16991293
申请日：2020-08-12
发明人： Hyun Koo Lee , Sung Won Park , Jun Hee Park , Hyeon Uk Kim
IPC分类号： H01L23/64 , H01L23/31 , H01L23/373 , H01L23/495 , H01L21/48 , H01L21/56 , H01L23/00 , H02P27/06
摘要： A power module includes a substrate having a dielectric layer, a first power semiconductor device disposed on an upper part of the substrate, and a second power semiconductor device disposed on a lower part of the substrate.
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公开(公告)号：US20180175010A1
公开(公告)日：2018-06-21
申请号：US15612304
申请日：2017-06-02
发明人： Hyun Koo Lee , Woo Yong Jeon , Sang Cheol Shin
IPC分类号： H01L25/18 , H01L25/065 , H01L23/367 , H01L23/538 , H05K1/14 , H05K1/02 , H01L23/04
CPC分类号： H01L25/18 , H01L23/04 , H01L23/367 , H01L23/49811 , H01L23/5381 , H01L23/5386 , H01L25/0652 , H01L25/072 , H05K1/0203 , H05K1/144 , H05K2201/042 , H05K2201/10037 , H05K2201/10522
摘要： A hybrid-type power module having dual-sided cooling is provided. The power module includes semiconductor chips that is disposed on each of an upper board and a lower board at a location between the boards. The semiconductor chips of the upper board and the lower board have different electric capacities.
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