公开(公告)号：US09663839B2

公开(公告)日：2017-05-30

申请号：US13979790

申请日：2011-12-16

申请人： Hyung-Don Joo ,  Chang-Soo Kim ,  Jong-Tae Park ,  Jong-Ho Park ,  Byeong-Goo Kim ,  Jin-Wook Seo

发明人： Hyung-Don Joo ,  Chang-Soo Kim ,  Jong-Tae Park ,  Jong-Ho Park ,  Byeong-Goo Kim ,  Jin-Wook Seo

IPC分类号： C21D8/02 ,  C21D8/12 ,  C21D9/46 ,  C22C38/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C21D6/00 ,  C22C1/02

CPC分类号： C21D8/0263 ,  C21D6/008 ,  C21D8/12 ,  C21D8/1272 ,  C21D9/46 ,  C22C1/02 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06

摘要： Provided is a method for manufacturing a grain-oriented electrical steel sheet, the method comprising: heating a grain-oriented electrical steel sheet slab; hot-rolling the heated slab; optionally annealing the hot-rolled steel sheet; subjecting the resulting steel sheet to one cold rolling or two or more cold rollings with intermediate annealing therebetween; subjecting the cold-rolled steel sheet to primary recrystallization annealing; and subjecting the annealed steel sheet to secondary recrystallization annealing, wherein the primary recrystallization annealing sequentially comprises an ultra-rapid heating process of heating the steel sheet at an average heating rate of 300° C./sec or higher, a rapid heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the ultra-rapid heating process, but not lower than 100° C./sec, and a general heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the rapid heating process.

公开(公告)号：US20130306202A1

公开(公告)日：2013-11-21

申请号：US13979790

申请日：2011-12-16

申请人： Hyung-Don Joo ,  Chang-Soo Kim ,  Jong-Tae Park ,  Jong-Ho Park ,  Byeong-Goo Kim ,  Jin-Wook Seo

发明人： Hyung-Don Joo ,  Chang-Soo Kim ,  Jong-Tae Park ,  Jong-Ho Park ,  Byeong-Goo Kim ,  Jin-Wook Seo

IPC分类号： C21D8/02

CPC分类号： C21D8/0263 ,  C21D6/008 ,  C21D8/12 ,  C21D8/1272 ,  C21D9/46 ,  C22C1/02 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06

摘要： Provided is a method for manufacturing a grain-oriented electrical steel sheet, the method comprising: heating a grain-oriented electrical steel sheet slab; hot-rolling the heated slab; optionally annealing the hot-rolled steel sheet; subjecting the resulting steel sheet to one cold rolling or two or more cold rollings with intermediate annealing therebetween; subjecting the cold-rolled steel sheet to primary recrystallization annealing; and subjecting the annealed steel sheet to secondary recrystallization annealing, wherein the primary recrystallization annealing sequentially comprises an ultra-rapid heating process of heating the steel sheet at an average heating rate of 300° C./sec or higher, a rapid heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the ultra-rapid heating process, but not lower than 100° C./sec, and a general heating process of heating the steel sheet at a lower average heating rate than the average heating rate of the rapid heating process.

摘要翻译： 本发明提供一种方向性电磁钢板的制造方法，其特征在于，包括：对取向电工钢板进行加热; 热轧板坯; 任选地退火热轧钢板; 对所得钢板进行一次冷轧或两次以上的冷轧，中间退火; 对冷轧钢板进行一次再结晶退火; 对退火后的钢板进行二次再结晶退火，其中，一次再结晶退火依次包括以300℃/秒以上的平均加热速度对钢板进行加热的超快速加热工序，加热快速加热 该钢板的平均加热速度低于超快速加热工艺的平均加热速率，但不低于100℃/秒，以及以较低的平均加热速率加热钢板的一般加热过程 平均加热速度快速加热。

公开(公告)号：US08544144B2

公开(公告)日：2013-10-01

申请号：US12918113

申请日：2009-02-12

申请人： Heon-Pyeong Ji ,  Hae-Seock Yang ,  Young-Min Hyun ,  Hyuk-Joo Kwon ,  Hyo-Churl Shin ,  Sang-Jun Park ,  Jin-Wook Seo

发明人： Heon-Pyeong Ji ,  Hae-Seock Yang ,  Young-Min Hyun ,  Hyuk-Joo Kwon ,  Hyo-Churl Shin ,  Sang-Jun Park ,  Jin-Wook Seo

IPC分类号： A47L9/10

CPC分类号： A47L9/108 ,  A47L9/00

摘要： Provided is a dust separation apparatus of a vacuum cleaner. The apparatus includes a dust-collecting body defining a dust-storing part, a compressing member configured to compress dust stored in the dust-collecting body, and a lower cover on a lower side of the dust-collecting body, the lower cover opening and closing the dust-storing part.

摘要翻译： 本发明提供一种真空吸尘器的除尘装置。 该装置包括：集尘体，其形成有吸尘部;压缩部件，其构造成压缩收尘体内的灰尘;以及集尘体下侧的下盖， 关闭除尘部分。

公开(公告)号：US08536609B2

公开(公告)日：2013-09-17

申请号：US13552100

申请日：2012-07-18

申请人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

发明人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  H01L51/5256

摘要： An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.

摘要翻译： 有机发光二极管显示器包括：衬底，设置在衬底上的有机发光二极管，包括第一电极，有机发射层和第二电极，有机发光二极管上的封装层和保护层 所述填充层，所述保护层包括氧化石墨烯和氮化石墨烯中的至少一种。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US20120326157A1

公开(公告)日：2012-12-27

申请号：US13313555

申请日：2011-12-07

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/3262 ,  H01L29/66757

摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

摘要翻译： 一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极 绝缘层和通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状的栅电极，其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。

公开(公告)号：US08318523B2

公开(公告)日：2012-11-27

申请号：US12405466

申请日：2009-03-17

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

摘要翻译： 薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。 薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅 层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极 并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

公开(公告)号：US08253141B2

公开(公告)日：2012-08-28

申请号：US12502413

申请日：2009-07-14

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee

IPC分类号： H01L29/76 ,  H01L29/04 ,  H01L27/01 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L29/66757 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/41733 ,  H01L29/78645 ,  H01L29/78696

摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.

摘要翻译： 薄膜晶体管（TFT），其制造方法以及具有TFT的有机发光二极管（OLED）显示装置。 TFT包括：基板; 设置在基板上的多晶硅（poly-Si）半导体层，包括源极，漏极和沟道区，结晶诱导金属，设置在半导体层的相对边缘上的第一吸杂位置和与 第一个吸气场; 设置在所述半导体层上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与半导体层的源极和漏极区域电连接的源极和漏极。

公开(公告)号：US20120000986A1

公开(公告)日：2012-01-05

申请号：US13009279

申请日：2011-01-19

申请人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F24D5/00

CPC分类号： C23C16/4481 ,  C23C16/45525 ,  C23C16/52

摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

摘要翻译： 一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应 源材料和使用该罐的沉积装置。 沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

公开(公告)号：US20110227078A1

公开(公告)日：2011-09-22

申请号：US13034818

申请日：2011-02-25

申请人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

发明人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

摘要翻译： 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。