公开(公告)号：US20120326157A1

公开(公告)日：2012-12-27

申请号：US13313555

申请日：2011-12-07

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/3262 ,  H01L29/66757

摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

摘要翻译： 一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极 绝缘层和通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状的栅电极，其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。

公开(公告)号：US20110220878A1

公开(公告)日：2011-09-15

申请号：US12926210

申请日：2010-11-02

申请人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L51/00 ,  H01L29/772 ,  H01L21/336

CPC分类号： H01L29/78645

摘要： A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions.

摘要翻译： 薄膜晶体管（TFT）包括衬底，并且衬底上的有源区域包括在有源区的相对端处的源极和漏极区域，与源区域和漏极区域中的至少一个相邻的轻掺杂区域， 多个沟道区，以及多个沟道区的两个沟道区之间的高掺杂区。 TFT包括在有源区上的栅极绝缘层和在栅绝缘层上具有多个栅电极的多栅电极，多个沟道区设置在相应的栅极下方，源区和漏区为 邻近多栅电极的最外部设置。 TFT包括在多栅电极上的第一层间绝缘层，以及延伸穿过第一层间绝缘层并与相应的源极和漏极区接触的源极和漏极。

公开(公告)号：US08815663B2

公开(公告)日：2014-08-26

申请号：US13313555

申请日：2011-12-07

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/3262 ,  H01L29/66757

摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

摘要翻译： 一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极 绝缘层和栅电极，其通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状，其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。

公开(公告)号：US08803148B2

公开(公告)日：2014-08-12

申请号：US13449423

申请日：2012-04-18

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Heung-Yeol Na

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Heung-Yeol Na

IPC分类号： H01L31/00

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3244

摘要： A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer.

摘要翻译： 薄膜晶体管可以包括衬底，衬底上的缓冲层，形成在缓冲层上的半导体层，半导体层上的栅极绝缘图案，栅极绝缘图案上的栅电极，覆盖栅极的层间绝缘层 电极和栅极绝缘图案，所述层间绝缘层具有接触孔和延伸穿过其的开口，所述接触孔暴露所述半导体层的源极区域和漏极区域，并且所述开口暴露所述半导体层的沟道区域，以及 源电极和漏电极，形成在层间绝缘层上，源极与源区连接，漏电极与半导体层的漏极区连接。

公开(公告)号：US08580677B2

公开(公告)日：2013-11-12

申请号：US13739866

申请日：2013-01-11

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

IPC分类号： H01L21/4763

CPC分类号： H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

摘要翻译： 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。

公开(公告)号：US20110300674A1

公开(公告)日：2011-12-08

申请号：US13067384

申请日：2011-05-27

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

IPC分类号： H01L21/30 ,  H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277

摘要： A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.

摘要翻译： 一种使硅层结晶的方法和使用其制造薄膜晶体管的方法，包括在衬底上形成非晶硅层的硅层结晶的方法; 对非晶硅层的表面进行疏水处理，以在其上获得疏水性表面; 在已经进行了疏水处理的非晶硅层上形成金属催化剂; 对包含金属催化剂的非晶硅层进行热处理，使非晶硅层析出为多晶硅层。

公开(公告)号：US08841206B2

公开(公告)日：2014-09-23

申请号：US13211700

申请日：2011-08-17

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC分类号： H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

摘要翻译： 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08507917B2

公开(公告)日：2013-08-13

申请号：US13209617

申请日：2011-08-15

申请人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Jae-Wan Jung

IPC分类号： H01L21/322

CPC分类号： H01L29/4908 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/78675

摘要： A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，设置在衬底上并通过使用金属催化剂结晶的半导体层，绝缘并设置在半导体层上的栅电极以及设置在半导体层和栅电极之间的吸气剂层，并形成 其中金属氧化物的扩散系数小于半导体层中的金属催化剂的扩散系数。

公开(公告)号：US20120049199A1

公开(公告)日：2012-03-01

申请号：US13137428

申请日：2011-08-15

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Tak-Young Lee ,  Jong-Ryuk Park

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L33/16 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1218 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/78603

摘要： A method of forming a polycrystalline layer includes forming a buffer layer on a substrate; treating the buffer layer with hydrogen plasma; forming an amorphous silicon layer on the buffer layer; forming a metallic catalyst layer for crystallizing the amorphous silicon layer on the amorphous silicon layer; and heat treating the amorphous silicon layer to form a polycrystalline silicon layer.

摘要翻译： 形成多晶层的方法包括在基板上形成缓冲层; 用氢等离子体处理缓冲层; 在缓冲层上形成非晶硅层; 形成用于使非晶硅层上的非晶硅层结晶的金属催化剂层; 并且对非晶硅层进行热处理以形成多晶硅层。

公开(公告)号：US20110248277A1

公开(公告)日：2011-10-13

申请号：US12975809

申请日：2010-12-22

申请人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Dong-Hyun LEE ,  Ki-Yong LEE ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L27/12 ,  H01L21/20 ,  H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765

摘要： A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment.

摘要翻译： 一种使非晶硅层结晶的方法，使用其的薄膜晶体管的制造方法和使用该制造方法的薄膜晶体管，所述结晶方法包括：形成非晶硅层; 将结晶催化剂颗粒定位在待分离的非晶硅层上; 从非晶硅层的一部分选择性地除去结晶催化剂颗粒; 并通过热处理使非晶硅层结晶。