公开(公告)号：US08536609B2

公开(公告)日：2013-09-17

申请号：US13552100

申请日：2012-07-18

申请人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

发明人： Yun-Mo Chung ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

IPC分类号： H01L33/00

CPC分类号： H01L51/5253 ,  H01L51/5256

摘要： An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.

摘要翻译： 有机发光二极管显示器包括：衬底，设置在衬底上的有机发光二极管，包括第一电极，有机发射层和第二电极，有机发光二极管上的封装层和保护层 所述填充层，所述保护层包括氧化石墨烯和氮化石墨烯中的至少一种。

公开(公告)号：US20130200422A1

公开(公告)日：2013-08-08

申请号：US13552100

申请日：2012-07-18

申请人： Yun-Mo CHUNG ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

发明人： Yun-Mo CHUNG ,  Jeong-Yeong Jeong ,  Jong-Ryuk Park ,  Jin-Wook Seo

IPC分类号： H01L33/44

CPC分类号： H01L51/5253 ,  H01L51/5256

摘要： An organic light emitting diode display includes a substrate, an organic light emitting diode provided on the substrate and including a first electrode, an organic emission layer, and a second electrode, a packed layer on the organic light emitting diode, and a protective layer on the packed layer, the protective layer including at least one of a graphene oxide and a graphene nitride.

摘要翻译： 有机发光二极管显示器包括：衬底，设置在衬底上的有机发光二极管，包括第一电极，有机发射层和第二电极，有机发光二极管上的封装层和保护层 所述填充层，所述保护层包括氧化石墨烯和氮化石墨烯中的至少一种。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US20120000986A1

公开(公告)日：2012-01-05

申请号：US13009279

申请日：2011-01-19

申请人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Min-Jae JEONG ,  Ki-Yong Lee ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo Soo ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F24D5/00

CPC分类号： C23C16/4481 ,  C23C16/45525 ,  C23C16/52

摘要： A canister for a deposition apparatus and a deposition apparatus using the same, and more particularly, a canister for a deposition apparatus that can provide a uniform amount of source material contained in a reaction gas supplied into a deposition chamber and improve safety in the supply of the source material, and a deposition apparatus using the canister. The deposition apparatus includes a deposition chamber; a canister supplying a reaction gas into the deposition chamber; and a carrier gas supplier for supplying a carrier gas into the canister, in which the canister includes a main body, a heating unit heating the main body and a temperature measuring unit disposed under the main body.

摘要翻译： 一种用于沉积设备的罐和使用其的沉积设备，更具体地，涉及一种用于沉积设备的罐，其可以提供均匀量的源材料，所述源材料包含在供应到沉积室中的反应气体中，并且提高了供应 源材料和使用该罐的沉积装置。 沉积设备包括沉积室; 向所述沉积室供应反应气体的罐; 以及载体气体供给器，用于将载气供应到罐中，其中罐包括主体，加热单元加热主体，温度测量单元设置在主体下方。

公开(公告)号：US20110227078A1

公开(公告)日：2011-09-22

申请号：US13034818

申请日：2011-02-25

申请人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

发明人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

摘要翻译： 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20110220878A1

公开(公告)日：2011-09-15

申请号：US12926210

申请日：2010-11-02

申请人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L51/00 ,  H01L29/772 ,  H01L21/336

CPC分类号： H01L29/78645

摘要： A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions.

摘要翻译： 薄膜晶体管（TFT）包括衬底，并且衬底上的有源区域包括在有源区的相对端处的源极和漏极区域，与源区域和漏极区域中的至少一个相邻的轻掺杂区域， 多个沟道区，以及多个沟道区的两个沟道区之间的高掺杂区。 TFT包括在有源区上的栅极绝缘层和在栅绝缘层上具有多个栅电极的多栅电极，多个沟道区设置在相应的栅极下方，源区和漏区为 邻近多栅电极的最外部设置。 TFT包括在多栅电极上的第一层间绝缘层，以及延伸穿过第一层间绝缘层并与相应的源极和漏极区接触的源极和漏极。

公开(公告)号：US20100224883A1

公开(公告)日：2010-09-09

申请号：US12714201

申请日：2010-02-26

申请人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

发明人： Byoung-Keon PARK ,  Tae-Hoo Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Yong-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC分类号： H01L33/16 ,  H01L29/786 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

摘要翻译： 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US08937313B2

公开(公告)日：2015-01-20

申请号：US13477802

申请日：2012-05-22

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Jong-Ryuk Park

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Jong-Ryuk Park

IPC分类号： H01L29/786 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/78603 ,  H01L27/1218

摘要： A semiconductor device and a method of manufacturing the same are disclosed. In one embodiment, the semiconductor device includes a substrate, a first silicon nitride layer formed over the substrate, a first silicon oxide layer formed directly on the first silicon nitride layer and having a thickness of about 1000 Å or less, and a hydrogenated polycrystalline silicon layer formed directly on the first silicon oxide layer.

摘要翻译： 公开了一种半导体器件及其制造方法。 在一个实施例中，半导体器件包括衬底，在衬底上形成的第一氮化硅层，直接形成在第一氮化硅层上并具有约1000或更小的厚度的第一氧化硅层和氢化多晶硅 层直接形成在第一氧化硅层上。

公开(公告)号：US08653528B2

公开(公告)日：2014-02-18

申请号：US13036241

申请日：2011-02-28

申请人： Yong-Duck Son ,  Ki-Young Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kii-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Yong-Duck Son ,  Ki-Young Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kii-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L29/76

CPC分类号： H01L27/1214 ,  H01L27/1255 ,  H01L29/66757

摘要： A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

摘要翻译： 一种薄膜晶体管，包括：形成在基板上的有源层; 形成在有源层的预定区域上的栅极绝缘层图案; 形成在栅极绝缘层图案的预定区域上的栅电极; 覆盖所述栅极绝缘层图案和所述栅电极的防蚀层图案; 以及形成在有源层和防蚀层图案上的源极部件和漏极部件。

公开(公告)号：US08580677B2

公开(公告)日：2013-11-12

申请号：US13739866

申请日：2013-01-11

申请人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

发明人： Yun-Mo Chung ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Tak-Young Lee ,  Jong-Ryuk Park ,  Jae-Wan Jung

IPC分类号： H01L21/4763

CPC分类号： H01L29/66742 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3262 ,  H01L27/3274 ,  H01L29/66757 ,  H01L29/78618 ,  H01L51/0081

摘要： A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

摘要翻译： 一种包括薄膜晶体管的基板，所述基板包括设置在所述基板上的有源层，所述有源层包括沟道区域和源极和漏极区域，设置在所述有源层上的栅极电极，对应于所述栅电极的沟道区域， 插入在有源层和栅电极之间的栅极绝缘层，设置成覆盖有源层和栅电极的层间绝缘层，具有部分地暴露有源层的第一和第二接触孔的层间绝缘层，设置的源极和漏极 在层间绝缘层上，对应于源极和漏极以及欧姆接触层的源极和漏极区域，欧姆接触层介于层间绝缘层和源极和漏极之间，并且使源极和漏极区域通过 第一和第二接触孔。