公开(公告)号：US20140284820A1

公开(公告)日：2014-09-25

申请号：US14295528

申请日：2014-06-04

Applicant: IBIDEN CO., LTD.

Inventor： Toshiki FURUTANI ,  Daiki KOMATSU ,  Masatoshi KUNIEDA ,  Naomi FUJITA ,  Nobuya TAKAHASHI

IPC: H05K1/11 ,  H05K1/02 ,  H01L23/28

CPC classification number: H05K1/113 ,  H01L21/4857 ,  H01L21/568 ,  H01L23/147 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/562 ,  H01L24/82 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2924/00013 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H05K1/0298 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A substrate for mounting a semiconductor includes a first insulation layer having first and second surfaces on the opposite sides and having a penetrating hole penetrating through the first insulation layer, an electrode formed in the penetrating hole in the first insulation layer and having a protruding portion protruding from the second surface of the first insulation layer, a first conductive pattern formed on the first surface of the first insulation layer and connected to the electrode, a second insulation layer formed on the first surface of the first insulation layer and the first conductive pattern and having a penetrating hole penetrating through the second insulating layer, a second conductive pattern formed on the second insulation layer and for mounting a semiconductor element, and a via conductor formed in the penetrating hole in the second insulation layer and connecting the first and second conductive patterns.