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2.Transistor structure with an emitter region epitaxially grown over the base region 失效
Title translation: 具有在基极区域外延生长的发射极区域的晶体管结构公开(公告)号:US3398335A
公开(公告)日:1968-08-20
申请号:US44678065
申请日:1965-03-31
Applicant: IBM
Inventor: DILL JR FREDERICK H
IPC: H01L21/331 , H01L23/29 , H01L23/482 , H01L29/00
CPC classification number: H01L23/291 , H01L23/4824 , H01L29/00 , H01L29/66272 , H01L2924/0002 , Y10S148/122 , H01L2924/00
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公开(公告)号:US3247576A
公开(公告)日:1966-04-26
申请号:US23414162
申请日:1962-10-30
Applicant: IBM
Inventor: DILL JR FREDERICK H , RUTZ RICHARD F
IPC: B28D5/00 , H01L21/301 , H01L21/304 , H01L33/00 , H01S3/06 , H01S5/32
CPC classification number: H01S5/32 , B28D5/0023 , H01L21/3043 , H01L33/00 , Y10S148/028 , Y10S148/115 , Y10S148/145 , Y10T225/10
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公开(公告)号:US3239393A
公开(公告)日:1966-03-08
申请号:US24867962
申请日:1962-12-31
Applicant: IBM
Inventor: DILL JR FREDERICK H
CPC classification number: C30B31/165 , H01L21/00 , Y10S252/951
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