公开(公告)号：US3369132A

公开(公告)日：1968-02-13

申请号：US23750162

申请日：1962-11-14

Applicant: IBM

Inventor： FANG FRANK F ,  TSU-HSING YEH ,  NIEN YU HWA

IPC: H01L21/00 ,  H01L21/18 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/12 ,  H01L31/173

CPC classification number: H01L31/12 ,  H01L21/00 ,  H01L21/185 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/173 ,  Y10S148/072

公开(公告)号：US3313663A

公开(公告)日：1967-04-11

申请号：US26866763

申请日：1963-03-28

Applicant: IBM

Inventor： TSU-HSING YEH ,  DE FRIES ROBERT M

IPC: C30B31/06 ,  H01L21/00 ,  H01L21/316 ,  H01L29/00

CPC classification number: H01L21/00 ,  C30B29/40 ,  C30B31/06 ,  H01L21/02164 ,  H01L21/02269 ,  H01L21/31612 ,  H01L29/00 ,  Y10S148/037 ,  Y10S148/062 ,  Y10S148/118 ,  Y10S438/923

Abstract: 1,052,379. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. March 31, 1964 [March 28, 1963], No.13157/64. Heading H1K. N-type impurity is diffused into an intermetallic compound semi-conductor body through a thin film of material which prevents the formation of an undesired compound resulting from reaction between the impurity and the body, which compound would prevent satisfactory diffusion of the impurity. In one example, silicon monoxide is evaporated to form a layer 11 (Fig. 2) on a P-type gallium arsenide body and an N-type impurity such as sulphur. selenium or tellurium is then diffused through the monoxide layer by heating for 120 to 260 hours at a temperature of 950‹ to 1150‹ C., to form an N-type layer 13, 2500 Š thick. Some arsenic may be included with the impurity source to suppress any tendency for dissociation of arsenic from the Ga As. The monoxide films tends to prevent formation of gallium sulphide, selenide or telluride (which would hinder diffusion) and also acts to prevent undesirable pitting of the surface. A portion, or the whole, of the monoxide layer may be etched away to allow for the provision of an ohmic connection to the P-type layer and a metallic plate may be secured to the N-type portion to provide a diode. Alternatively, further diffusion of a P- type impurity such as zinc or cadmium may be diffused into part of the N-type layer to form an emitter region, electrodes when being added to provide a transistor. In a further modification, N-type impurity is diffused through the monoxide layer into an N-type aluminium arsenide body to form an N + region and a pellet of gold and tin alloy is alloyed into the opposite surface of the N-type region to form a diode with a low-voltage drop in the bulk of its semi-con ductor material.