公开(公告)号：US3679492A

公开(公告)日：1972-07-25

申请号：US3679492D

申请日：1970-03-23

Applicant: IBM

Inventor： FANG FRANK F ,  FOWLER ALAN B

IPC: H01L21/265 ,  H01L29/00 ,  H01L29/76 ,  H01L7/54

CPC classification number: H01L29/00 ,  H01L21/265 ,  H01L29/76 ,  Y10S148/053 ,  Y10S148/103 ,  Y10S148/105 ,  Y10S148/147

Abstract: A PROCESS FOR PREPARING METAL-OXIDE SEMICONDUCTOR DEVICES (MOSFET''S) USING ION IMPLANATION IS DESCRIBED WHEREIN ALUMINUM SOURCE AND DRAIN CONTACTS ARE ADDED AFTER ION IMPLANTATION THROUGH A HIGHLY REFRECATORY METAL GATE SO THAT VERY HIGH TEMPERATURE ANNEALING CAN BE USED. IF THE ALUMINUM CONTACTS ARE PUT DOWN BEFORE THE HIGH TEMPERATURE ANNEALING, NOT ONLY DOES A REACTION BETWEEN THE ALUMINUM AND THIN OXIDE CHANNEL REGION OF THE MOSFET OCCUR, BUT OHMIC CONTACTS AT THE SOURCE AND DRAIN DETERIORATE, RESULTING IN DEFECTIVE DEVIES.

公开(公告)号：US3675140A

公开(公告)日：1972-07-04

申请号：US3675140D

申请日：1970-06-30

Applicant: IBM

Inventor： FANG FRANK F ,  LEAN ERIC G

IPC: H03F13/00 ,  H03F3/04

CPC classification number: H03F13/00

Abstract: An amplifier for Rayleigh surface acoustic waves in which an additional control is provided. A region of variable conductivity is located in close proximity to the surface on which the acoustic wave travels. Examples of this region are an inversion layer whose conductivity is controlled by electrical bias, and a bulk region whose conductivity is controlled by a variable width depletion region. The electric field produced by moving charge carriers in the variable conductivity region interacts with the piezoelectric field produced by the acoustic wave to transfer energy to the acoustic wave, or extract energy from this wave.

Abstract translation: 一种用于瑞利表面声波的放大器，其中提供附加控制。 可变导电区域位于声波传播的表面附近。 该区域的实例是其电导率由电偏压控制的反转层，以及其导电性由可变宽度消耗区域控制的体区。 通过在可变导电区域中移动电荷载流子产生的电场与由声波产生的压电场相互作用以将能量传递到声波，或从该波提取能量。

公开(公告)号：US3679985A

公开(公告)日：1972-07-25

申请号：US3679985D

申请日：1970-06-30

Applicant: IBM

Inventor： FANG FRANK F ,  LEAN ERIC G

IPC: G06G7/195 ,  H01F13/00 ,  H03F7/00 ,  H03F13/00

CPC classification number: G06G7/195 ,  H01F13/00 ,  H03F7/00 ,  H03F13/00

Abstract: A parametric device for acoustic waves which does not depend on the non-linearities of a medium for operation. Both degenerate and non-degenerate parametric amplifier/converters are provided in which first order velocity changes give parametric interactions. The electric field associated with an acoustic wave in a piezolectric medium is modulated by an electric pump wave. This is accomplished by modulating the conductivity of a region in the piezoelectric medium, or close to that medium. The resulting modulation of the K-vector of the acoustic wave leads to parametric interactions between the acoustic signal wave, the electric pump wave, and the generated idler wave. Various effects, such as the field effect and the photoconductive effect, are used to modulate the conductivity of the region.

Abstract translation: 用于声波的参数化装置，其不依赖于用于操作的介质的非线性。 提供退化和非简并参数放大器/转换器，其中一阶速度变化给出参数相互作用。 与压电介质中的声波相关的电场由电泵波调制。 这是通过调制压电介质中的区域的电导率或接近该介质来实现的。 声波的K向量的最终调制导致声信号波，电泵波和产生的惰轮之间的参数相互作用。 使用诸如场效应和光电导效应的各种效应来调制该区域的电导率。

公开(公告)号：US3569799A

公开(公告)日：1971-03-09

申请号：US3569799D

申请日：1967-01-13

Applicant: IBM

Inventor： FANG FRANK F ,  FOWLER ALAN B

IPC: H01L23/29 ,  H01L27/07 ,  H01L29/00 ,  H01L29/08 ,  H01L29/68 ,  H01L11/00

CPC classification number: H01L29/685 ,  H01L23/29 ,  H01L23/291 ,  H01L27/0788 ,  H01L29/00 ,  H01L29/0804 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This disclosure provides a control feature for a solid state device which has a negative resistance characteristic in the current-voltage curve due to an insulator in the current path. A negative resistance device is fabricated by planar technology to have an insulator layer interposed between a semiconductor layer and a metal layer in the negative resistance current path. The control feature is provided through a control electrode which has a lateral junction in the semiconductor layer and near to the current path through the insulator layer. Control voltage pulses of opposite polarities applied to the control electrode obtain switching between stable states of the device in both directions without a requirement of turning off the current.

公开(公告)号：US3417464A

公开(公告)日：1968-12-24

申请号：US45757165

申请日：1965-05-21

Applicant: IBM

Inventor： FANG FRANK F ,  WALKER EDWARD J ,  YU HWA N

IPC: H01L27/088 ,  H01L21/00 ,  H01L21/22 ,  H01L21/316 ,  H01L21/8234 ,  H01L21/8236 ,  H01L29/00 ,  H01L29/78

CPC classification number: H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/8236 ,  H01L29/00 ,  Y10S438/923

公开(公告)号：US3407343A

公开(公告)日：1968-10-22

申请号：US53783366

申请日：1966-03-28

Applicant: IBM

Inventor： FANG FRANK F

IPC: H01L29/00 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/76 ,  H01L29/00 ,  H01L29/78

公开(公告)号：US3458798A

公开(公告)日：1969-07-29

申请号：US3458798D

申请日：1966-09-15

Applicant: IBM

Inventor： FANG FRANK F ,  HOWARD WEBSTER E JR

IPC: H02M7/21 ,  H01L29/00 ,  H02M7/12 ,  H02M7/155 ,  H02M7/217 ,  H03D1/18 ,  H02M7/44 ,  H02M7/68

CPC classification number: H03D1/18 ,  H01L29/00 ,  H02M7/1552 ,  H02M7/217

公开(公告)号：US3369132A

公开(公告)日：1968-02-13

申请号：US23750162

申请日：1962-11-14

Applicant: IBM

Inventor： FANG FRANK F ,  TSU-HSING YEH ,  NIEN YU HWA

IPC: H01L21/00 ,  H01L21/18 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/12 ,  H01L31/173

CPC classification number: H01L31/12 ,  H01L21/00 ,  H01L21/185 ,  H01L27/10 ,  H01L29/00 ,  H01L29/74 ,  H01L31/173 ,  Y10S148/072

公开(公告)号：US3263095A

公开(公告)日：1966-07-26

申请号：US33343563

申请日：1963-12-26

Applicant: IBM

Inventor： FANG FRANK F

IPC: H01L29/267 ,  H01L29/43 ,  H01L29/778

CPC classification number: H01L29/267 ,  H01L29/432 ,  H01L29/778 ,  H01L29/7787