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公开(公告)号：US10712659B2
公开(公告)日：2020-07-14
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US11092886B2
公开(公告)日：2021-08-17
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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公开(公告)号：US11181818B2
公开(公告)日：2021-11-23
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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公开(公告)号：US20200209737A1
公开(公告)日：2020-07-02
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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Patent Agency Ranking
公开(公告)号：US11599019B2
公开(公告)日：2023-03-07
申请号：US17131297
申请日：2020-12-22
Applicant: IMEC VZW
Inventor： Marina Timmermans , Cedric Huyghebaert , Ivan Pollentier , Elie Schapmans , Emily Gallagher
Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
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公开(公告)号：US20180329291A1
公开(公告)日：2018-11-15
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
IPC: G03F1/64
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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公开(公告)号：US11163229B2
公开(公告)日：2021-11-02
申请号：US16674582
申请日：2019-11-05
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Marina Mariano Juste , Marina Timmermans , Ivan Pollentier , Cedric Huyghebaert , Emily Gallagher
Abstract: A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.
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公开(公告)号：US20210191255A1
公开(公告)日：2021-06-24
申请号：US17131297
申请日：2020-12-22
Applicant: IMEC VZW
Inventor： Marina Timmermans , Cedric Huyghebaert , Ivan Pollentier , Elie Schapmans , Emily Gallagher
IPC: G03F1/64
Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
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公开(公告)号：US20180329289A1
公开(公告)日：2018-11-15
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
IPC: G03F1/64 , C01B32/159 , G03F1/22
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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