公开(公告)号：US20180240699A1

公开(公告)日：2018-08-23

申请号：US15903909

申请日：2018-02-23

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Ming Mao ,  Peter De Schepper ,  Michael Kocsis

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/033 ,  H01L21/027 ,  H01L23/522 ,  H01L29/06

CPC classification number: H01L21/76802 ,  H01L21/0274 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31051 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76897 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/5226 ,  H01L29/0649

Abstract: An example embodiment may include a method for blocking one or more portions of one or more trenches during manufacture of a semiconductor structure. The method may include (i) providing a substrate comprising one or more trenches, and a dielectric material under the one or more trenches, (ii) providing a first overlayer on the substrate, thereby filling the one or more trenches, the first overlayer having a planar top surface, a top portion of the first overlayer, comprising the top surface, being etchable selectively with respect to a condensed photo-condensable metal oxide, (iii) covering a first area of the top surface, situated directly above the one or more portions and corresponding thereto, with a block pattern of the condensed photo-condensable metal oxide, thereby leaving a second area of the top surface, having at least another portion of at least one of the trenches thereunder, uncovered.

公开(公告)号：US09520298B2

公开(公告)日：2016-12-13

申请号：US14616672

申请日：2015-02-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Peter De Schepper ,  Jean-Francois de Marneffe ,  Efrain Altamirano Sanchez

IPC: H01L21/308 ,  H01L21/3065 ,  H01L21/027

CPC classification number: H01L21/3086 ,  H01L21/0273

Abstract: The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H2 plasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30s.

Abstract translation: 本公开涉及一种用于处理衬底上的光致抗蚀剂结构的方法，所述方法包括在衬底上制造一个或多个抗蚀剂结构，将衬底引入等离子体反应器中，并使衬底在较低温度下进行等离子体处理 例如在零到-110℃之间。等离子体处理可以是在电感耦合等离子体反应器中进行的H 2等离子体处理。 治疗时间可能至少为30s。

公开(公告)号：US20150228497A1

公开(公告)日：2015-08-13

申请号：US14616672

申请日：2015-02-07

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Peter De Schepper ,  Jean-Francois de Marneffe ,  Efrain Altamirano Sanchez

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/3086 ,  H01L21/0273

Abstract: The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H2 plasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30 s.

Abstract translation: 本公开涉及一种用于处理衬底上的光致抗蚀剂结构的方法，所述方法包括在衬底上制造一个或多个抗蚀剂结构，将衬底引入等离子体反应器中，并使衬底在较低温度下进行等离子体处理 例如在零到-110℃之间。等离子体处理可以是在电感耦合等离子体反应器中进行的H 2等离子体处理。 治疗时间可以至少30秒。