公开(公告)号：US09306011B2

公开(公告)日：2016-04-05

申请号：US14049839

申请日：2013-10-09

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L23/58 ,  H01L29/36 ,  H01L21/265 ,  H01L21/66 ,  H01L51/05 ,  H01L29/06 ,  H01L21/266

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。

公开(公告)号：US09142444B2

公开(公告)日：2015-09-22

申请号：US13895132

申请日：2013-05-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Markus Zundel ,  Erwin Bacher ,  Andreas Behrendt ,  Joerg Ortner ,  Walter Rieger ,  Rudolf Zelsacher

IPC: H01L21/8242 ,  H01L21/762 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/861

CPC classification number: H01L21/76224 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/861

Abstract: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.

Abstract translation: 半导体部件包括在半导体主体中具有至少一个保护沟槽的半导体本体。 绝缘层至少位于保护沟槽的底部。 在保护沟槽中的绝缘层上形成具有厚度D的导电层，其中导电层仅部分地填充保护沟槽。

公开(公告)号：US09799521B2

公开(公告)日：2017-10-24

申请号：US15059783

申请日：2016-03-03

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L51/40 ,  H01L21/266 ,  H01L21/265 ,  H01L21/66 ,  H01L29/36 ,  H01L51/05 ,  H01L29/06 ,  H01L51/00

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

公开(公告)号：US20160189964A1

公开(公告)日：2016-06-30

申请号：US15059783

申请日：2016-03-03

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L21/266 ,  H01L21/265 ,  H01L51/00

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。

公开(公告)号：US20150097184A1

公开(公告)日：2015-04-09

申请号：US14049839

申请日：2013-10-09

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Thomas Schweinboeck ,  Jesper Wittborn ,  Erwin Bacher ,  Juergen Holzmueller ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L51/05 ,  H01L21/265 ,  H01L21/66

CPC classification number: H01L21/266 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26546 ,  H01L22/30 ,  H01L22/32 ,  H01L22/34 ,  H01L29/0692 ,  H01L29/36 ,  H01L51/0002 ,  H01L51/05

Abstract: A semiconductor device includes a semiconductor substrate. The semiconductor substrate includes a plurality of first doping regions of a first doping structure arranged at a main surface of the semiconductor substrate and a plurality of second doping regions of the first doping structure arranged at the main surface of the semiconductor substrate. The first doping regions of the plurality of first doping regions of the first doping structure include dopants of a first conductivity type with different doping concentrations. Further, the second doping regions of the plurality of second doping regions of the first doping structure include dopants of a second conductivity type with different doping concentrations. At least one first doping region of the plurality of first doping regions of the first doping structure partly overlaps at least one second doping region of the plurality of second doping regions of the first doping structure causing an overlap region arranged at the main surface.

Abstract translation: 半导体器件包括半导体衬底。 半导体衬底包括布置在半导体衬底的主表面上的第一掺杂结构的多个第一掺杂区域和布置在半导体衬底的主表面处的第一掺杂结构的多个第二掺杂区域。 第一掺杂结构的多个第一掺杂区的第一掺杂区包括具有不同掺杂浓度的第一导电类型的掺杂剂。 此外，第一掺杂结构的多个第二掺杂区域的第二掺杂区域包括具有不同掺杂浓度的第二导电类型的掺杂剂。 第一掺杂结构的多个第一掺杂区域中的至少一个第一掺杂区域部分地与第一掺杂结构的多个第二掺杂区域中的至少一个第二掺杂区重叠，导致布置在主表面处的重叠区域。