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    Alignment mark definer
    2.
    发明授权
    Alignment mark definer 有权
    对齐标记定义

    公开(公告)号：US09165889B2

    公开(公告)日：2015-10-20

    申请号：US13931396

    申请日：2013-06-28

    Applicant: Infineon Technologies AG

    Inventor： Joerg Ortner ,  Josef Campidell ,  Andreas Greiner

    IPC: H01L23/544

    CPC classification number: H01L23/544 ,  H01L2223/54406 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An alignment mark definer is configured to provide a geometrical definition for an actual alignment structure to be formed at a temporary surface of a substrate based on a desired appearance of the alignment mark and on an expected alteration of an appearance of the actual alignment structure caused by a deposition material deposited on the temporary surface and the actual alignment structure.

    Abstract translation: 对准标记定义器被配置为基于对准标记的期望外观以及由于对准标记的期望外观而导致的实际对准结构的外观提供要在基板的临时表面处形成的实际对准结构的几何定义 沉积在临时表面上的沉积材料和实际对准结构。

    Reticle and exposure method including projection of a reticle pattern into neighboring exposure fields
    4.
    发明授权
    Reticle and exposure method including projection of a reticle pattern into neighboring exposure fields 有权

    公开(公告)号：US10802404B2

    公开(公告)日：2020-10-13

    申请号：US15919989

    申请日：2018-03-13

    Applicant: Infineon Technologies AG

    Inventor： Joerg Ortner ,  Iris Moder ,  Ingo Muri

    IPC: G03F7/20 ,  G03F1/00 ,  G03F1/42

    Abstract: An exposure method includes projecting a reticle pattern into a first exposure field of a photoresist layer, wherein the reticle pattern includes first and second line patterns on opposite edges of the reticle pattern and wherein at least the first line pattern includes an end section through which light flux decreases outwards. The reticle pattern is further projected into a second exposure field of the photoresist layer, wherein a first tapering projection zone of the end section of the first line pattern in the second exposure field overlaps a projection area of the second line pattern in the first exposure field.

    Method of Dicing a Wafer
    5.
    发明申请
    Method of Dicing a Wafer 有权
    切片晶圆的方法

    公开(公告)号：US20160379884A1

    公开(公告)日：2016-12-29

    申请号：US14751035

    申请日：2015-06-25

    Applicant: Infineon Technologies AG

    Inventor： Joerg Ortner ,  Michael Roesner ,  Gudrun Stranzl ,  Rudolf Rothmaler

    IPC: H01L21/78 ,  H01L21/308 ,  G03F1/38 ,  H01L21/3065

    CPC classification number: H01L21/78 ,  G03F1/38 ,  H01L21/3065 ,  H01L21/3083

    Abstract: A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.

    Abstract translation: 切割晶片的方法包括提供晶片并蚀刻晶片以在限定在晶片的内部区域内的切口线段之间划分管芯并且在切口线段与晶片的周边边缘之间划分多个晶片边缘区域 。 多个晶片边缘区域中的每一个由切割线分割，每条切割线各自在切割线段之一的两个端点之一和晶片的周边边缘之间延伸。

    Method of implanting an implant species into a substrate at different depths
    8.
    发明授权
    Method of implanting an implant species into a substrate at different depths 有权

    公开(公告)号：US11640908B2

    公开(公告)日：2023-05-02

    申请号：US16877855

    申请日：2020-05-19

    Applicant: Infineon Technologies AG

    Inventor： Joerg Ortner ,  Marcel Heller ,  Dieter Kaiser ,  Nicolo Morgana ,  Jens Schneider

    IPC: H01L21/266 ,  H01L21/265 ,  H01L29/78

    Abstract: A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.

    Method of Implanting an Implant Species into a Substrate at Different Depths
    10.
    发明申请
    Method of Implanting an Implant Species into a Substrate at Different Depths 审中-公开

    公开(公告)号：US20200373163A1

    公开(公告)日：2020-11-26

    申请号：US16877855

    申请日：2020-05-19

    Applicant: Infineon Technologies AG

    Inventor： Joerg Ortner ,  Marcel Heller ,  Dieter Kaiser ,  Nicolo Morgana ,  Jens Schneider

    IPC: H01L21/266 ,  H01L21/265 ,  H01L29/78

    Abstract: A method of implanting an implant species into a substrate at different depths is described. The method includes forming an implant mask over the substrate. The implant mask includes a first implant zone designed as an opening and a second implant zone designed as a block array. The implant species is implanted through the implant mask under an implant angle tilted against a block plane, such that a first implant area is formed by the implant species at a first depth in the substrate beneath the first implant zone and a second implant area is formed by the implant species at a second depth in the substrate beneath the second implant zone. The first depth is greater than the second depth.

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